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Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 133-140, November 15–19, 2020,
...Abstract Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 144-149, November 15–19, 2020,
...Abstract Abstract An advanced technique for site-specific Atom Probe Tomography (APT) is presented. An APT sample is prepared from a targeted semiconductor device (commercially available product based on 14nm finFET technology). Using orthogonal views of the sample in STEM while FIB milling...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 215-218, November 10–14, 2019,
... nm (or lower) during FIB milling. According to the property of different sample and its preliminary treatment in the FIB, we have the satisfactory approaches to be applied. Using this improved protection method, we demonstrate the structures within the TEM lamella can be observed without ion beam...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 223-226, November 10–14, 2019,
... the stress inside the material. Standard preparation method for strain measurement is to use a wafer dicing saw and subsequently focused ion beam (FIB) milling, to create lamellae with a defined geometry, close to the desired TSV. This method requires different equipment and knowledge base to achieve...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 209-213, October 28–November 1, 2018,
..., planar, or inverted TEM preparation. This may pave the way to novel SCM imaging opportunities. As FIB milling generates a parasitic gallium implanted layer, a mechanical polishing step is needed to clean the specimen prior to SCM imaging. Efforts can be conducted to reduce the thickness of this layer...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 224-231, October 28–November 1, 2018,
...Abstract Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 252-255, October 28–November 1, 2018,
...Abstract Abstract Vacuum assisted ex situ lift out may be used for fast, easy, and reproducible plan view specimen preparation. Manipulation of samples via beveled hollow glass probes whose plane of interest is parallel to slotted grids allow for conventional FIB milling for S/TEM analysis...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 379-382, October 28–November 1, 2018,
... current through FIB milling and a lower accelerating voltage in SEM imaging have been applied to identify the micro structure defect. failure analysis focus ion beam micro defective structure pnp power device scanning electron microscopy voltage breakdown Failure Analysis of Micro Defective...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 256-259, November 5–9, 2017,
... by reducing striations and damages during FIB milling. Generally, the effect of air gaps between wordlines or between metal lines, as well as some unexpected defect voids can be eliminated in most cases if this ideal method is applied. air gaps carbon deposition focused ion beam milling NAND flash...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 270-274, November 5–9, 2017,
...Abstract Abstract An advanced sample preparation protocol using Xe+ Plasma FIB for increasing FA throughput is proposed. We prepared cross-sections of 400 μm and wider in challenging samples such as a BGA (CSP), bond wires in mold compound or a TSV array. These often suffer from FIB milling...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 61-64, November 1–5, 2015,
... micropipetting module with an EXLO station, making use of both suction vacuum forces and adhesion forces for the pick and place of a FIB milled free specimen onto a slotted EXpressLO grid. The geometry for manipulation to EXpressLO grids is detailed in this paper. It is observed that the vacuum assisted lift out...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 97-103, November 1–5, 2015,
...-destructive real time area of interest location and end point detection. It specifically considers the use of the micro-optical camera system for its benefit in assisting with frontside and backside circuit edit, as well as other typical FIB milling activities. The quality of the image obtained by the IR...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 469-473, November 9–13, 2014,
... materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET). CMOS devices failure analysis fin-field effect transistors focused ion beam milling sample preparation transmission electron microscope...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 480-484, November 9–13, 2014,
... to the wafer surface was prepared using in-situ lift-out FIB milling. Upon TEM analysis, the planar sample was further milled in the along-gate and cross-gate directions separately. Eventually, a pillar-like sample containing a single transistor gate was obtained. Using this technique, we are able to analyze...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 136-142, November 9–13, 2014,
... is observed by the Scanning Electron Microscopy (SEM). Time to prepare a cross section is accelerated and the excellent quality is suitable for subsequent failure analysis. Also important is proper sample cleaving before FIB milling. Using an accurate method to cleave the sample prior to FIB preparation...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 17-26, November 3–7, 2013,
...Abstract Abstract In this paper different sample preparation strategies for fast and efficient failure analysis of 3D devices are reviewed and further explored. It will be shown that a combined workflow using laser ablation and plasma FIB milling provides best flexibility to cover most...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 27-32, November 3–7, 2013,
...Abstract Abstract 3D tomography of TSVs was performed by combining Xe plasma FIB milling and lift-out techniques. This approach allows analyzing the structure of TSVs in detail using a method faster than the usual 3D tomography by Ga FIB and more precise than X-ray tomography. Both well-filled...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 111-117, November 3–7, 2013,
... demonstrate that the combination of silicon nanomachining box length and FIB via box length identifies the most challenging aspects of the FIB edit. The smallest geometries include a 300 nanometer silicon access area with a FIB milled 200 nanometer via inside it. More advanced technology nodes will require...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 39-43, November 11–15, 2012,
...Abstract Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 55-60, November 11–15, 2012,
... by adapted Photoemission Microscopy (PEM), Lock-in Thermography (LIT) and Electron Beam Absorbed Imaging (EBAC). In addition, a new highly efficient target preparation technique is presented, which allows the combination of Laser and FIB milling, in order to access TSV sidewall defects. Finally the use...