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Abstract: Dopant profiling
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Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 375-378, November 15–19, 2020,
... (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 494-497, November 10–14, 2019,
... Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 160-163, November 5–9, 2017,
... force probing for detailed electrical characterization of individual devices, experimenting with UV radiation, and SCM 2D dopant profiling analysis, it showed that trapped charges in dielectric layers cause leakage near silicon surface. Based on the finding, the FAB fixed the issue by implementing UV...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 437-445, November 5–9, 2017,
... Abstract Modern techniques of semiconductor physical failure analysis are effective at revealing physical defects and device material composition, however, dopant profiles/ concentrations are not easily determined since these materials are in trace concentrations. Therefore, defects related...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 282-286, November 6–10, 2016,
... Abstract The single-bit charge loss of flash memory after stress has been investigated using TEM with selective chemical etching and TCAD simulation for the effect of silicon dopant profile and electrical failure analysis technique. However, the abnormal dopant profile on the drain-side...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 82-86, November 1–5, 2015,
... Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples. capacitance...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 257-260, November 14–18, 2010,
... Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 56-60, November 4–8, 2007,
... an operating frequency of 3 GHz when unloaded and a resonator Q around 110, resulting in an improvement of the system sensitivity over the conventional RCA CED sensor, and may be used in a commercial AFM system. The performance of this sensor is discussed and two-dimensional dopant profile from a semiconductor...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 279-288, November 12–16, 2006,
... characterization technique, which provides accurate imaging and dopant profiling capabilities for silicon carbide devices. dopant profiling failure analysis JFET MOSFET sample preparation scanning electron microscopy secondary electrons potential contrast silicon carbides wide-bandgap semiconductors...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 398-405, November 2–6, 2003,
... Abstract Scanning capacitance microscopy (SCM) is used as a qualitative analysis tool with multiple applications for failure analysis. SCM can measure the shape of dopant profiles, can ascertain if certain implants have been completed, can verify the conduction type of implanted regions...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 191-197, November 11–15, 2001,
... doping concentration affects the thermal conductivity (k) due to the free carriers introduced, we propose the SThM as a potential dopant-profiling tool. To correlate doping concentration and thermal conductivity, we have mapped out the thermal conductivity of decreasing Boron-doped and Phosphorus-doped...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 31-39, November 15–19, 1998,
... Abstract The use of scanning kelvin probe microscopy (SKPM) for analyzing two-dimensional dopant profiles on production-level silicon CMOS devices is described, with images of topography and dopant profiles presented. Both plan-view and crosssectional analyses are performed to measure CMOS...