1-20 of 691 Search Results for

wafer level test

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 263-268, October 31–November 4, 2021,
... two test samples when it evaluates the statistical allowance in the second stage. These logics are estimated under the assumption of normality for the underlying population. However, there are many wafer level test items such as Fail Bit Count (FBC) where their populations are non-normal distribution...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 546-551, November 14–18, 2004,
...Abstract Abstract We present, a novel solution to focused ion beam (FIB) circuit edit, performed through the back and front surfaces of the same semiconductor device under test (DUT). This complementary dual-side FIB modification was performed at wafer level test, on a wafer piece, utilizing...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 373-376, November 15–19, 1998,
...Abstract Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 486-495, November 2–6, 2003,
... recommendations for successful fabrication, adhesion requirements for both fabrication and assembly, and considerations for interconnect structure to enable wire-bonding. There is also interest in understanding the wafer level test challenges presented by the low-K devices. In addition to the typical concerns...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 219-220, November 12–16, 2006,
...Abstract Abstract This article explores the use of principal component analysis (PCA) and hierarchical clustering in the analysis of wafer level automatic test pattern generation (ATPG) failure data. The principle of commonality is extended by utilizing hierarchical clustering to collect die...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 587-593, November 3–7, 2013,
... in using wafers. This paper provides a different perspective to consider such tool as part of a wafer level debug solution to enhance current failure pre diagnostic and diagnosis capabilities, to meet requirements for fast and effective yield ramp. Test cases are presented to support this perspective...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 323-326, November 12–16, 2000,
...Abstract Abstract Communication Signal Processors (CSP) did not have the Signal-to-noise ratio (SNR) performance expected. Significant differences were noticed between SNR values at wafer level and package testing. The analog section of the chip was suspected to be the culprit as the problem...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 359-363, November 14–18, 2010,
...Abstract Abstract Contrary to traditional packages, packaging and testing of wafer-level chip scale package (WLCSP) are done before wafer dicing. The package can’t be rebuilt on a single chip; therefore, the failure analysis and debug performed by Circuit Edit (CE) on ICs with WLCSP face...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 6-12, November 12–16, 2006,
... non-invasive characterization due to the favorable transmission properties of acoustic phonons through device packaging and high throughput due to universal detectability from a single detection point, which facilitates high volume wafer and package level testing. The dependence of phonon generation...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 343-348, November 14–18, 1999,
..., short, high Idd and gross functional fails. However, the primary failure mode is gross functional fails. The accelerated testing is not necessary to expose the failure modes. All defective dice were randomly located on the wafer. Failure mode analysis was performed on both wafer level and the packaged...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 147-152, November 12–16, 2006,
... as on the wafer level. Mechanical stress is applied to the tested structure with programmable static forces up to 3.6 N and dynamic loads at frequencies up to 20 Hz. The applications of the presented system include the postmanufacturing test, characterization and stress screens as well as reliability studies. We...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 134-137, November 3–7, 2013,
... the die bondability. This paper proposes a simulation method to determine the specification limit of Fluorine and a Shelf Lifetime Accelerated Test (SLAT) for process monitoring. Wafers with different F levels were selected to perform SLAT with high temperature and high relative humidity tests for a fixed...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 317-319, November 14–18, 2010,
... delayering methods of conventional scanning capacitance microscopy has also been highlighted [1,2,3,4,5,6]. Typically, this laboratory AFP characterization is employed on die fragments sampled from whole wafers following back end of the line (BEOL) metallization processing and test. The process vintage...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 264-266, November 15–19, 2020,
... error-code correction (ECC) modules. In order to screen these failures in the wafer or/and package level electrical tests, high voltage stress methods are necessary. Therefore, accurate stress quantity decided by combination temperature, voltage and time, and effective stress methodologies are essential...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 388-393, October 31–November 4, 2021,
... due to only a small number of diagnosis problem at the level of a population (e.g. a wafer) of tests being run, as well as there being a limited number of failing die instead of analyzing each failing die completely observation points (output pins) in manufacturing test. independently as has been done...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 319-322, November 15–19, 1998,
... functional test results do not provide a starting point for the physical coordinates within a failed die. Without X, Y coordinates of a fail, wafer-level FA is not possible. The most advanced logic chip designs contain an internal test known as scan test or design for test. Scan testing breaks the logic real...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 464-467, November 2–6, 2008,
... this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 128-132, November 2–6, 2008,
... of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 397-401, November 10–14, 2019,
... include the ability to nondestructively determine failures within seconds to minutes. New tools should be quantitative, have sufficient resolution to determine sub-micron sized defects and voids in TSVs at the wafer or package level. It should also measure thickness and their material composition...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 213-217, November 15–19, 1998,
...Abstract Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes...