Failure analysis of organics at the microscopic scale is an increasingly important requirement, with traditional analytical tools such as FTIR and Raman microscopy, having significant limitations in either spatial resolution or data quality. We introduce here a new method of obtaining Infrared microspectroscopic information, at the submicron level in reflection (far-field) mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. This novel combination of these two correlative techniques can be considered to be complimentary and confirmatory, in which the IR confirms the Raman result and vice-versa, to yield more accurate and therefore more confident organic unknowns analysis.

In this paper, we present application of the SDL technique towards full root cause analysis of functional and structural failures from BIST, SCAN etc. on AMD’s advanced Silicon-on-Insulator (SOI) microprocessors based on a 90 nm process technology node. The devices were exercised at speed using production testers. SDL is used on these microprocessors with failure modes which pass at a lower temperature/voltage but fail at higher temperature/voltage or vice versa to isolate the failing logic/node. The SDL sites are examined for a full root cause analysis and possible process improvements.

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