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tungsten plug defects

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ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 448-450, November 6–10, 2005,
... that DVC defects with lower GLV (GLV1) are W-plugs that are open and almost open. DVC defects with GLV2 are caused by partially open W-plugs and in-plug voids. dark voltage contrast defects e-beam inspection failure analysis tungsten plug defects Primary Beam Secondary and Back Scattered...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 268-271, November 6–10, 2016,
... plugs Successful Identification of a Subtle Oxide Defect in Between Tungsten (W) plug and Titanium (Ti) liner in a Bipolar Transistor Raymond G. Mendaros Global Failure Analysis Analog Devices General Trias (ADGT) Gateway Business Park, Brgy. Javalera, Gen. Trias, Cavite, Philippines 4107...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 146-150, November 4–8, 2007,
...) was not conclusive. The fail site was narrowed down to a section of V3int metal 1 line using FIB isolations. A tungsten plug defect was observed (Figure 4) after it was parallel polished down to metal 1. Case 2 This failure was an ADC (Analog to Digital Converter) nonlinearity problem. Global fault isolation did...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 54-57, November 14–18, 2010,
..., as shown in Figure 3. The tungsten plug defect could have been caused by particle blocking, tungsten deposition anomalies, CMP anomalies, improper post-CMP clean, or poor coverage of the next metal layer causing tungsten corrosion during photoresist removal. The zoom-in view shows that the contact glue...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 606-616, November 11–15, 2012,
... Abstract In this paper, a novel inspection mode of electron beam inspection (EBI) that can effectively detect buried voids in tungsten (W) plugs is reported for the first time. Buried voids in metal are a defect of interest (DOI) that cannot be captured by either optical inspection...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 159-164, November 18–22, 1996,
... Abstract A new 0.5 um 1 Megabit SRAM which employed a double metal, triple poly CMOS process with Tungsten plug metal to poly /silicon contacts was introduced. During burn-in of this product, high currents, apparently due to electrical overstress, were experienced. Electrical analysis showed...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 267-272, November 3–7, 2002,
... Abstract Smaller technologies and increasing chip functionality has resulted in tightly packed devices and more stacked metal layers. For technologies between 0.25µm and 0.14 µm, stacking packed metal layers required the combination of Tungsten plugs as interconnection and the utilization...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 309-313, November 12–16, 2000,
... indicates that it is tungsten. TEM result also allows us to clearly tell where is the origin of the short lines. It is very hard with FIB image because of its limited resolution. All the lines start at the boundary of BPSG layer and cap TEOS layer. These short lines are the defects that caused the failure...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 383-387, November 11–15, 2012,
... substrate and serves as a base for DRAM cells and Digit Line Contacts (DLCT) which are usually made up of tungsten. In order to have good electrical contact, part of the poly plug must get buried into the silicon substrate. This is achieved by a dimple etch into the silicon substrate. Due to various...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 141-147, November 18–22, 1996,
... were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 499-504, November 2–6, 2008,
... of tungsten contact plugs performed in a FIB system @ 30kV, showing the 3 bright contacts to be analyzed. Prior to physical analysis, this defect was relocated in FIB imaging mode in a combined FIB/SEM system (see Fig. 3). A probe was milled to include these 3 contacts, followed by a preliminary sample...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 248-254, November 14–18, 2004,
... analysis on the defect could not determine conclusively the elemental composition of the resistive layer. A second device that had the same failure mode signature was submitted for analysis. Fault isolation of this device was also traced to the same Via 2 plug. The sample was mechanically polished...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 236-243, November 14–18, 2004,
... previously intact were now cored. It appeared that the SEM had triggered corrosion of the plugs along the path the SEM took traveling from one defect to the next (Figure 2). Figure 1: SEM Inspection of Processing Defect At Window-1 Level, After Tungsten CMP Figure 2: Same Defect as Figure 1, after Post-SEM...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 339-343, October 27–31, 1997,
... was taken out from the Fill chamber and an SEM (JEOL) photo was then taken as shown in Figure 7. The residue was clearly shown, which made the LIs deform and caused the leakage between LIl and an LI2 plug. Res idue This provided a conclusive evidence about where the residue was introduced -- the Tungsten...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 286-291, November 10–14, 2019,
... and a probe current of 50 pA were optimal for obtaining a VC image of this sample with FE-SEM. Fig. 4. Variation of image contrast with probe current. 288 Electron energy spectra and energy-filtered image We obtained the electron energy spectra of SEs from a sample of tungsten plugs on a SiO2 substrate using...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 169-175, October 28–November 1, 2018,
... 9 are typical EBIRCH scans which were attempting to find gate-gate shorts in a type of FEOL (Front End of Line) test structure. Serpentines were made of straight lines of gate material, with turnarounds made of tungsten plug. In multiple analytical jobs, there were no useful signals, only...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 121-127, October 28–November 1, 2018,
... Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 313-317, November 11–15, 2001,
... a tungsten plug, since transmission of the beam through the sample will be impeded. From figure 4 we can tell that viewing the defect either left-right or top- down will miss some spots. The best viewing angle to expose all three possible failure locations is viewing along the poly line. However...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 601-605, November 11–15, 2012,
... column share source and gate, while a drain is shared by the two neighboring bits in the same row. The DB failure mode indicates that the defect is likely related to the shared drain, which includes via1 (copper), M1 (copper), W-plug, drain silicide and implant. 601 ISTFA 2012: Conference Proceedings...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 3-7, November 11–15, 2001,
... results revealed the root cause of the failure to be a metallic stringer which shorted the metal 1 to the adjacent tungsten plug, as shown is Fig. 9. This unique technique is the best technique that can reveal the metallic stringer defect in SRAM cell precisely and clearly. It can also be applied...