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transmission electron microscopy

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Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 77-85, November 3–7, 2002,
...Abstract Abstract Recent developments in transmission electron microscopy (TEM) sample preparation have greatly reduced the time and cost for preparing thin samples. In this paper, a method is demonstrated for viewing thin samples in transmission in an unmodified scanning electron microscope...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 371-374, November 5–9, 2017,
... resistive states of the memory. chemical analysis electron energy loss spectroscopy failure analysis forming hafnium dioxides oxide resistive random access memory switching titanium transmission electron microscopy Investigation of switching mechanism in HfO2-based oxide resistive memories...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 197-204, November 2–6, 2003,
...Abstract Abstract Transmission electron microscopy (TEM) [1] and scanning capacitance microscopy (SCM) [2] have become common failure analysis tools at Sandia for new product development, process validation, and yield enhancement. These two techniques provide information that cannot be obtained...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 302-306, November 6–10, 2005,
...Abstract Abstract By combining transmission electron microscopy (TEM) [1] with scanning capacitance microscopy (SCM) [2], it is possible to enhance our understanding of device failures. At Sandia, these complementary techniques have been utilized for failure analysis in new product development...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 505-511, November 3–7, 2002,
... electron microscopy under bump metallization Microstructure Studies of Under Bump Metallization Systems Using Transmission Electron Microscopy Chih-Hang Tung1, George T.T. Sheng2, Poi-Siong Teo1, Marvin C.Y. Lo1 1Institue of Microelectronics, 11 Science Park Rd., Singapore 117685, Rep. of Singapore...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 196-201, November 12–16, 2006,
...Abstract Abstract The capabilities of analytical transmission electron microscopy (TEM), such as high spatial resolution, micro-chemical analysis, etc., have led to an increasingly essential role for TEM-based analysis in process development, defect identification, yield enhancement, and root...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 343-350, November 12–16, 2006,
... that thin layers (gate oxide, high-K film thickness, and interfacial layer) can be measured using high-resolution transmission electron microscopy (HRTEM) with good accuracy but there are some challenges in the form of sample thickness, damage-free samples, and precise sectioning of the sample for site...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 24-25, November 13–17, 2011,
... electron microscopy transistors Local Lattice Strain Measurement using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy Jayhoon Chung and Guoda Lian Texas Instruments, Dallas, TX USA Lew Rabenberg Texas Materials Institute, University of Texas, Austin, TX USA...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 137-140, November 13–17, 2011,
...Abstract Abstract Imaging tomography by transmission electron microscopy (TEM) is a technique which has been growing in popularity in recent years, yet it has not been widely applied to semiconductor defect studies and root cause determination [1- 3]. In part this is due to the complex...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 141-145, November 13–17, 2011,
...Abstract Abstract For 22nm technology node and beyond, fully depleted devices such as FinFET and ETSOI are leading candidates. Certain critical dimensions of such devices are well below 10nm, and only transmission electron microscopy (TEM) has the resolution to provide measurement with sub...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 470-471, November 10–14, 2019,
...Abstract Abstract Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a factor of two improvement...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 237-242, October 27–31, 1997,
...Abstract Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSi x ) was studied. Using the combination method...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 337-346, November 11–15, 2012,
...Abstract Abstract Different epitaxial structures have been studied by high-resolution x-ray diffraction and x-ray topography, Transmission Electron Microscopy and Atomic Force Microscopy to establish correlations between epitaxial growth conditions and crystal perfection. It was confirmed...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 236-238, November 3–7, 2013,
... transmission electron microscopy voids In-situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM). Sungkyu Son, Seungjoon Jeon, Jangwon Oh, Won Kim, Hojoung Kim, Jonghak Lee, Seungho Woo, Sungjoo Hong, Gapsok Do*, Seungyun Lee...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 137-140, November 6–10, 2016,
... electron microscopy Analysis of SRAM Function Failure Due to Unformed CoSi2 Using Nano-prober and Transmission Electron Microscopy (TEM) Jong Eun Kim, Jong Hak Lee*, Jong Kyu Cho Sang Hyun Ban, Chang Su Park, Nam Il Kim, Dae Woo Kim, Su Cheol Wi, Seung Hoon Sa, Sung Man Kim, Do Hwan Kim, Jae Won Lee...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 472-475, November 6–10, 2016,
... microscopy voids Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy (TEM) Yu Zhu, S. Kim, J. Gonsalves, M. Brightsky, N. Sosa, C. Lam IBM T.J. Watson Research Center, Yorktown Heights, NY, USA yuzhu@us.ibm.com, 914-945-1673 J. Chen, J. Shen, N. Gong, J...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 358-361, November 5–9, 2017,
... beam electron diffraction sample preparation strain analysis transmission electron microscopy Transmission Electron Microscopy Nano Beam Diffraction Sensitivity Study in Focused Ion Beam Prepared Semiconductor Test Structures James Demarest IBM, Albany, NY USA jjdemar@us.ibm.com Introduction...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 238-240, October 28–November 1, 2018,
...Abstract Abstract Transmission electron microscopy (TEM) sample can be routinely made at a sub 30nm thickness and specific features in semiconductor device design are on the order of 30nm and smaller. As a result, small changes in pattern match registration can significantly influence...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 206-210, October 31–November 4, 2021,
... Center. dark field scanning transmission electron microscopy energy dispersive X-ray spectroscopy Ge2Sb2Te5 microstructure phase change material ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 318-322, November 1–5, 2015,
...Abstract Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality...