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transistors

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Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 327-335, November 6–10, 2016,
...Abstract Abstract We present a characterization methodology for fast direct measurement of the charge accumulated on Floating Gate (FG) transistors of Flash EEPROM cells. Using a Scanning Electron Microscope (SEM) in Passive Voltage Contrast (PVC) mode we were able to distinguish between '0...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 272-279, October 28–November 1, 2018,
..., electron microscopy imaging, similar standard cell recognition, as well as within and between die Standard Cell Statistical Analysis (SCSA). We develop the process to access the transistor’s drain/source area; image the full surface; develop a robust pattern recognition tool and analyze the standard cell...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 144-148, November 15–19, 2009,
...Abstract Abstract Contrary to conventional Si-based device, organic thin-film transistors (OTFTs) constituting organic semiconductors are easily destroyed. Investigating failures using traditional FA techniques like electron microscopy or cross section is hard to procure. Therefore, the purpose...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 170-175, November 13–17, 2011,
...Abstract Abstract The channel of metal-oxide-semiconductor (MOS) transistors at different modes of operation has been characterized using dynamic backside laser reflectance modulation technique for different NMOS and PMOS transistors with different channel lengths. The reflectance modulations...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 230-233, November 13–17, 2011,
... crystal and OBIRCH techniques are not well adapted. capacitors failure analysis hot spot detection indium gallium arsenides infrared thermography monolithic microwave integrated circuits optical beam induced resistance change pseudomorphic high electron mobility transistors scanning thermal...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 302-306, November 6–10, 2005,
... microscopy Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors M.L. Anderson*, P. Tangyunyong, T.A. Hill, C.Y. Nakakura, T.J. Headley, and M.J. Rye Sandia National Laboratories, Albuquerque, NM USA *mlande@sandia.gov...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 374-377, November 1–5, 2015,
...Abstract Abstract In this work, we discussed the fault isolation method for the Thin-Film Transistor (TFT). Many defects in the TFT can be directly observed by optical microscope; however, some defects are not visible in either optical microscope or SEM making the fault isolation effort very...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 307-311, November 3–7, 2002,
...Abstract Abstract This paper describes a newly developed preparation technique for vertical transistors in DRAM. The recently developed concept of DRAM cells combining a deep trench storage capacitor and a vertical access transistor promises a significant reduction in cell size. In the vertical...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 381-387, November 10–14, 2019,
... of a compound gate-to-drain defect as well as the characterization of unexpected SOI source-to-well leakage. compound gate-to-drain defect electrical characterization failure analysis nanoprobing silicon-on-insulator Nanoprobing of advanced silicon-on-insulator transistors Stefano Larentis, Kent...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 95-100, November 18–22, 1996,
...Abstract Abstract This paper describes how faulty thin-film transistors (TFTs) having fragile structures in themselves can be characterized by cross-sectional transmission electron microscopy (X-TEM) through the achievement of pinpoint accuracy in focused ion beam (FIB) etching. We demonstrate...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 257-262, November 18–22, 1996,
...Abstract Abstract A commercial Electron-beam measurement set-up has been applied to study triggering and turn-on of NMOS ESD protection transistors. Using this technique turn-on times in the sub halve nanosecond range could be determined for the first time. The measured transient behaviour...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 255-262, November 12–16, 2000,
...Abstract Abstract The repetitive energy discharge test (power cycling) is an accelerated stress test (AST) that can be used to characterize the long-term behavior of power transistors taking into account stress on customer final application. This paper describes the application of this test...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 435-442, November 12–16, 2000,
...Abstract Abstract This paper describes a new method for the mapping of local temperatures in the active region of highpower III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 85-87, November 6–10, 2016,
...Abstract Abstract Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of the DRAM die. This paper...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 128-131, November 6–10, 2016,
...Abstract Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 268-271, November 6–10, 2016,
... bench testing at the ADGT FA laboratory at ambient temperature with VDD supply voltage lowered to 2.38V from nominal value of 3.0V. Series of fault isolation analyses using Light Emission Microscopy (LEM) and Optical Beam Induced Resistance Change (OBIRCH) localized the failure to a bipolar transistor...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 86-93, November 12–16, 2006,
... charges in Flash EEPROM devices is presented. Scanning Capacitance Microscopy (SCM) is used to directly probe the carrier concentration on Floating Gate Transistor (FGT) channels. The methodology permits mapping channels and active regions from the die backside. Transistor charged values (ON/OFF...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 257-259, November 12–16, 2006,
...Abstract Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 29-33, November 4–8, 2007,
... the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 345-347, November 4–8, 2007,
...Abstract Abstract As a promising candidate for DRAM scaling beyond 40nm technology, the fin cell transistor (FCT) utilizing p-type poly silicon gate (PPG) was proposed. However FCT makes a lot of bridge failure between word-line and landing-plug poly (LPP) connecting source and drain regions...