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Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 454-459, November 10–14, 2019,
... for very thin sample preparation significantly modifies the thermal system surrounding active circuitry. Here, high aspect ratio trenches are shown to offer a unique method to take advantage of thick silicon (> 100µm) for lateral heat dissipation as well as thin silicon (< 2µm) for minimally...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 465-469, November 10–14, 2019,
... with infrared light to perform analysis from the backside of the device, but typically only have resolutions down to ~200 nm. Improving resolution beyond this requires the use of shorter wavelengths, which in turn requires a silicon thickness in the 2 to 5 µm range. Current ultra-thinning techniques allow...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 472-478, November 10–14, 2019,
...Abstract Abstract In this paper, we present methods for targeted silicon thinning by contour milling to overcome challenges associated with thinning large devices to under 5 µm remaining silicon thickness. Implementation of these techniques are expected to improve the yield of ultra-thin sample...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 161-165, November 6–10, 2016,
.... failure analysis laser voltage probing sample preparation silicon solid immersion lens thinning visible light probing Visible Light Probing Sample Thinning Using Targeted Lapping Rudolf Schlangen, William Lo, Jane Li, Elia Halteh, John Aguada, Jessica Yang, Howard Marks NVIDIA, Santa Clara, CA...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 441-445, November 15–19, 1998,
... from the backside of the die. The first step in this process involves gaining access to the back of the die through the packaging material. Most backside analysis techniques require that the die then be thinned and polished. This paper describes specialized equipment and procedures to meet those...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 461-464, November 15–19, 1998,
... an accuracy of about plus or minus 5 micrometers relative to the initial surface of the die. However, greater accuracy is often desired to minimize FIB etch time. In addition, the laser step is often proceeded by a mechanical thinning operation on the die. This mechanical process introduces an uncertainty...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 424-427, November 13–17, 2011,
...Abstract Abstract Post silicon validation techniques require backside sample preparation by silicon thinning techniques. The conventional fixture to this preparation on large die packages causes silicon to crack. A new “4-point bending” fixture was developed to reduce silicon bending strain...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 478-484, November 11–15, 2012,
...Abstract Abstract Backside sample preparation is required by many post silicon validation techniques like FIB (Focused Ion Beam) circuit editing and optical probing using Photon Emission or Laser Stimulus methods [1]. In spite of many conventional methods of silicon thinning and polishing, some...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 552-557, November 14–18, 2004,
... thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented. failure analysis IC packages memory devices...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 423-429, October 31–November 4, 2021,
...Abstract Abstract Global thinning is a technique that enables backside failure analysis and radiation testing. In some devices, it can also lead to increased thresholds for single-event latchup and upset. In this study, we examine the impacts of global thinning on 28 nm node FPGAs. Test devices...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 73-79, October 31–November 4, 2021,
... immersion lens (SIL) technology with precision die thinning. Two failure analysis case studies are presented to demonstrate the method, one a low level negative current leakage failure caused by ESD testing, the other a scan chain failure traced to the input of a delay buffer circuit. In both cases, success...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 100-104, November 9–13, 2014,
... to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology. chemical decapsulation copper pillar bumps failure analysis fault isolation fault localization flip chip packages parallel lapping passive voltage contrast sample preparation thin...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 110-114, November 9–13, 2014,
...Abstract Abstract Visible light laser voltage probing (LVP) for improved backside optical spatial resolution is demonstrated on ultra-thinned samples. A prototype system for data acquisition, a method to produce ultrathinned SOI samples, and LVP signal, imaging, and waveform acquisition...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 172-177, November 9–13, 2014,
...Abstract Abstract The analysis of thin layers in semiconductor components represents a central point in the quality control of semiconductor companies. Not only to control production processes, but to successfully operate also reverse engineering, reliable thin-film measurement methods...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 491-495, November 9–13, 2014,
...Abstract Abstract A novel approach for the localization of weak points in thin transistor and capacitor oxides before electrical breakdown will be presented in this paper. The proposed approach utilizes Electron Beam Absorbed Current (EBAC) imaging based on Scanning Electron Microscopy (SEM...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 114-119, November 1–5, 2015,
... intermetallic compounds scanning electron microscope transmission electron microscopy Detection and Measurement of Intermetallic Thin Films Using EDX Line Scanning Carl Nail EAG, Irvine, California, United States cnail@eaglabs.com Abstract Elementally characterizing intermetallic compounds (IMCs...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 282-289, November 1–5, 2015,
...Abstract Abstract Non-destructive optical second harmonic generation (SHG) is shown to be an effective method for detecting interfacial surface and subsurface non-visual defects in commercial thick and extremely-thin (ET) SOI wafers. A method is demonstrated for removing contributions (noise...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 314-317, November 1–5, 2015,
...Abstract Abstract This paper aims to discuss the processes involved in establishing a more rapid approach in exposing the polyfuse and thin film fuse using the reactive ion etching, chemical deprocessing and parallel lapping techniques. The results proved that parallel lapping technique...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 374-377, November 1–5, 2015,
...Abstract Abstract In this work, we discussed the fault isolation method for the Thin-Film Transistor (TFT). Many defects in the TFT can be directly observed by optical microscope; however, some defects are not visible in either optical microscope or SEM making the fault isolation effort very...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 460-465, November 1–5, 2015,
...Abstract Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. Ultra-thin RST enables VIS light techniques such as laser voltage probing. In this work we...