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Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 51-57, October 30–November 3, 2022,
.../asm.cp.istfa2022p0051 Copyright © 2022 ASM International® All rights reserved. www.asminternational.org Advanced Lithium-Ion Battery Failure Analysis: An Evolving Methodology for an Evolving Technology Troy A. Hayes, PhD., P.E., Adam P. Cohn, Ph.D., Robert M. Kasse, Ph.D. Exponent, Menlo Park, CA, USA Hernan Sanchez...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 92-96, October 30–November 3, 2022,
... Abstract This paper reports the novel application of Plasma Focused Ion Beam (pFIB) to reveal subtle defects in advanced technology nodes. Two case studies presented, both of which alter the standard work procedure in order to find the defects. The first case highlights the precise milling...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 149-158, November 18–22, 1996,
... Abstract We present the results of recent failure analysis of an advanced, 0.5 um, fully planarized, triple metallization CMOS technology. A variety of failure analysis (FA) tools and techniques were used to localize and identify defects generated by wafer processing. These include light...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 299-303, November 6–10, 2016,
... Technology Development and Yield Ramp on First Silicon Utilizing a Wafer-Level Dynamic EFA System Li-Qing Chen, Ming-Sheng Sun, Jui-Hao Chao, and Soon Fatt Ng Semiconductor Manufacturing International Corp, Product Test and Failure Analysis, Shanghai, China [email protected], phone +86-21-20810751...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 427-431, November 6–10, 2016,
... Abstract Within this paper, the authors present an adapted FA flow for state-of-the-art Package Failure Analysis for 20nm technology and below. As a key aspect, three methods (EOTPR, 3D Xray & PFIB) are introduced as the next-gen FA standard methods for emerging package technologies...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 458-462, November 6–10, 2016,
... for scan logic failure analysis at advanced technology nodes. Several failure modes in scan logic FA are used as examples to illustrate how CAFM provides excellent solutions to some of the very challenging FA problems. The gate to active short in nFET devices, resistive contact, and open defect on gate...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 211-213, October 27–31, 1997,
... Abstract Laser microchemical (LMC) technology has become an important element of the FIA and debug tool set by supplying key steps not well addressed by previous tools. In this paper we report the optimization of the LMC technology to solve key issues for flip chip FIA. Specific processes have...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 221-225, November 15–19, 1998,
... Abstract Three case studies in which the passive voltage contrast technique (PVC) was used in-fab during the development of a 0.25μm ASIC CMOS technology for rapid characterization and failure isolation are presented. The first case involved using the PVC technique to evaluate the gate oxide...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 273-278, November 15–19, 1998,
... analysis focused ion beam milling metallization stack static random-access memory Investigation of High Via Resistance of a 0.25pm CMOS ASIC Technology Abstract H. Sur, S. Bothra, R. Lei, J. Hahn VLSI Technology, Inc. San Jose, California H. Brugge VLSI Technology, Inc. San Antonio, Texas...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 413-425, November 15–19, 1998,
... to enhance bump reliability. failure analysis flip chip packaging high temperature operational life reliability analysis solder bumps Application of Standard Metallurgical Analytical Techniques to Improve High Temperature Operational Life Performance of Bump Interconnect Technology of Flip Chip...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 311-316, November 14–18, 1999,
...). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 405-412, November 14–18, 1999,
... Abstract During the development and qualification of a radiation-hardened, 0.5 μm shallow trench isolation technology, several yield-limiting defects were observed. The 256K (32K x 8) static-random access memories (SRAMs) used as a technology characterization vehicle had elevated power supply...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 3-8, November 12–16, 2000,
... probing p-n junctions silicon 3Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors Wai Mun Yee, Mario Paniccia*, Travis Eiles*, Valluri Rao* Intel Technology Sdn. Bhd, Malaysia ; * Intel Corporation, Santa Clara, CA, USA. Abstract A novel optical...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 93-95, November 12–16, 2000,
... technology with 5 metal layers, failed after 500 hours burn-in. We successfully isolated the leaky poly and subsequently found gate oxide pinholes with the combination of PVC technique and emission analysis. emission microscopy failure analysis gate oxides MOS devices passive voltage contrast...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 225-230, November 12–16, 2000,
... Abstract Focused ion beam (FIB) techniques are continuously improved to meet the demands of shrinking device dimensions and new technologies. We developed a simultaneous milling and deposition FIB technique to provide electrical contact to small buried targets in semiconductors. This method...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 235-239, November 12–16, 2000,
... interface. The role of the native Al oxide is discussed in preserving Al and allowing Au lift off. aluminum failure analysis gold etching integrated circuits metallization optoelectronic devices 235 Selective Au Etching in Au/Al Bonds in Current IC Technology M. Vanzi University of Cagliari...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 327-330, November 12–16, 2000,
... Abstract This paper discusses the challenges involved in testing microprocessors incorporating silicon-on-insulator (SOI) technology and assesses new characterizations tools, such as scanning capacitance microscopy (SCM), focused ion beam (FIB) analysis, and AFM electrical probing, that show...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 373-377, November 11–15, 2001,
... cantilever devices provide us with basic knowledge concerning process parameter variations. CMOS failure analysis microelectromechanical systems micromachining Characterization of CMOS MEMS technology scatterings L. Latorre*, V. Beroulle*, M. Dardalhon *, P. Nouet*, F. Pressecq C. Oudea...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 385-388, November 11–15, 2001,
... this fault identification technique are described. failure analysis fault identification infrared micro thermography infrared sensors leakage current Infrared Micro Thermography Applications in Fault Identification in Advanced BiCMOS Technology Scott Kiefer, Manoj Nair, Paul Sanders, John Steele...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 183-188, November 3–7, 2002,
... Abstract Focused Ion Beam (FIB) has been widely accepted in circuit modification and debugging of new chips and process technologies [1]. It has the advantages of rapid confirmation of design fixes and reducing the cost and time to build new masks. In this paper, we will describe the latest...