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Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 256-261, November 6–10, 2005,
... Abstract A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 212-216, November 6–10, 2005,
... Abstract This paper presents a judicious reasoning method by coupling passive voltage contrast (PVC) with scanning probe microscopy (SPM) for revealing particular invisible defect modes, which were imperceptible to observe and very difficult to identify by means of traditional physical failure...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 208-212, November 3–7, 2013,
... Abstract This paper describes novel concepts in equipment and measurement techniques that integrate optical electrical microscopy and scanning probe microscopy (SPM) capabilities into a single tool under the umbrella of optical nanoprobe electrical (ONE) microscopy. Optical imaging ONE...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 97-101, November 6–10, 2016,
... Abstract Physical failure analysis of nanoelectronic devices is typically performed using plan view or cross-sectional TEM, SEM or SPM techniques. While plan view SPM and SEM analyses are limited by the depth sensitivity of the technique, cross-sectional analysis requires at least approximate...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 413-418, November 2–6, 2003,
... Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 484-489, November 10–14, 2019,
... (SPM). The SPM has since become well established as a mainstream analytical instrument with a continually increasing role in the development of nanoscale semiconductor technologies providing critical data from initial concept to technology development to manufacturing to failure analysis [2]. Scanning...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 228-230, November 6–10, 2005,
... circuitry. Nondestructive observation of domain structure of ferroelectrics, dynamic behavior under external field and related phenomena is becoming significant[1-3]. As a non-destructive and subsurface characterizing technique, the acoustic microscopy based on a commercial SPM was developed in our lab[4-7...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 327-335, November 6–10, 2016,
...-of-the-art Scanning Probe Microscopy (SPM) methods. Only a relatively simple backside sample preparation is necessary for accessing the FG of memory transistors. The technique presented was successfully implemented on a 0.35 μm technology node microcontroller and a 0.21 μm smart card integrated circuit. We...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 487-490, November 14–18, 2004,
.... As a result, we needed to collect some electrical data to explain complex PVC image, before physical failure analysis (PFA) was started. This paper shows how to use the scanning probe microscope (SPM) tool to make up PVC method and overcome the physical failure analysis challenge. From our experiment, the C...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 613-617, November 5–9, 2017,
... Abstract Scanning microwave impedance microscopy (sMIM) is an emerging technique that can provide detailed information beyond that of conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the investigation and failure analysis...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 185-187, November 4–8, 2007,
... Abstract Scanning capacitance microscopy (SCM) is an SPM technique which measures capacitance variation between tip and sample generated by applied AC bias while the tip is scanning in contact mode. Focused ion beam (FIB) milling is the more precise method to perform cross-sectioning...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 98-101, November 14–18, 2010,
... implant profile in a window of 150nm was identified as the cause of leakage in a capacitor array. Our approach may be applied to other scanning probe microscopy (SPM) techniques in the same category, i.e., scanning spreading resistance microscopy (SSRM) or scanning microwave microscopy (SMM). 90 nm...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 256-259, November 2–6, 2008,
... Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 426-433, October 30–November 3, 2022,
... Abstract In recent years, scanning probe microscopy (SPM) has drawn substantial attention for subsurface imaging, since the ultrasharp AFM tip (≈ 10 nm in radius) can deliver and detect, mechanical and electrical signals right above the material’s 3D volume with which it is directly interacting...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 467-471, November 3–7, 2002,
... Unfortunately the threshold for chemical decoration is high (1e17 atoms/cm3) which can make troubleshooting gradient or well-implant related problems difficult. Implant imaging techniques based on scanning probe microscopy (SPM) have also been applied to diagnose failures.3,4 SCM can provide two- dimensional...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, iii-vi, November 14–18, 2004,
... Nicholas Antoniou Roger Alvis Ray D. Harrison Cosme Furlong Local / Social Events Chair SPM Techniques Package Level Analysis Sample Preparation FEI Company Multiprobe, Inc. Texas Instruments Worcester Polytechnic Dan J. Bodoh David L. Burgess Kultarasingh N. Hooghan Leo G. Henry Panel Discussion Chair...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 31-39, November 15–19, 1998,
... function. In the case of this commercially available SPM, EPD data are collected during a subsequent rescan after topographic data are recorded. The tip is raster- scanned at a constant height based on the stored height (Z) information from its corresponding topography scan. The tool- induced mechanical...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 519-524, November 9–13, 2014,
... limited to delineation heavily doped source/drain junctions. Scanning probe microscopy (SPM) techniques including scanning capacitance microscopy (SCM) [8-12], scanning spreading resistance microscopy (SSRM) [13-14] and scanning microwave microscopy (SMM) [15-16] have been extensively applied...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 673-676, November 14–18, 2004,
... equipment description: The equipment used for the analysis was a Nanoscope III controller from Digital Instruments (DI) with a Dimension 3100 scanning probe microscope (SPM). For SCM a conductive, metal-coated, probe is required. For this experiment these probes were CoCr-coated silicon. Case study I: Thin...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 547-549, October 28–November 1, 2018,
... dopant profiles at nanometer scale is growing. Although Scanning Probe Microscopy (SPM) is one of the most effective techniques for analyzing the electrical characteristics of devices, few reports have been published on transistors with a physical dimension smaller than 20 nm and the methodology has yet...