1-20 of 106 Search Results for

silicon dioxide

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 217-224, November 11–15, 2001,
... (> 1GHz) RISC microprocessor operation [1,2]. Such low k dielectric films dramatically reduce the line-to-line capacitance over conventional silicon dioxide dielectric films as well as FSG (fluorinated silicon glass) dielectric films. Electrical characterization of submicron copper interconnects...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 397-401, November 6–10, 2016,
... on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 268-273, November 9–13, 2014,
... (BEOL) are usually very thick metal lines (>4μm thickness) and protected with hard Silicon Dioxide (SiO2) material that is formed from (TetraEthyl OrthoSilicate) TEOS as Inter-Metal Dielectric (IMD). In order to perform physical failure analysis (PFA) on the logic or memory, the top thick metal...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 203-211, November 15–19, 1998,
... is patterned to form interconnections between the circuit elements of an integrated circuit. Aluminum is popular because it is relatively low in resistance, adheres well to silicon dioxide, and naturally forms a passivating layer of aluminum oxide. The circuit interconnect may be subjected to an Electrical...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 231-234, November 12–16, 2000,
... the backside of the device and dissolve the silicon with minimal affect to the mold compound, surface oxides or bridging metal. In previous experiments during analysis of devices with trench structures, TMAH etch was found to be highly preferential to etching silicon over both silicon dioxide and aluminum, see...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 73-76, November 18–22, 1996,
... of materials such as silicon dioxide, silicon nitride, aluminum, polysilicon, titanium and tungsten. Although wet chemical etching is useful in some cases, it lacks the precise control needed to successfully delayer modern ICs. Reactive ion etching (RIE) is used for delayering because it results in precise...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 469-473, November 9–13, 2014,
... on the FinFET gate profile measurement. Three types of protective material were used to prepare the lamella: 1) Silicon Dioxide Insulator (SiO2), 2) Platinum (Pt) and 3) Tungsten (W). The TEM sample preparation technique and methodology are the same except the protective material used and coating time. In order...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 153-157, November 2–6, 2003,
... issue for ultra-thin nitrided silicon dioxide gate dielectric, the high-k materials such as hafnium dioxide and HfAlOx have been proposed as possible near-term replacement for silicon dioxide as gate dielectric material. [2,3] For ultra-thin gate oxide layer, TEM is one of the most promising techniques...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 158-165, November 2–6, 2003,
... using the forward scattering technique. A photo-resist layer 1 micron thick on silicon dioxide was patterned and developed with a test structure, and then imaged with a 30 kV electron beam using the forward scattered technique, see Figs. 10 and 11. No charging or sample damage was observed. Since...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 305-309, November 11–15, 2012,
... separated by FSG films as the IMD layer at N-1 level, where N refers to top layer and usually consists of either silicon dioxide or composite stack of silicon dioxide and silicon nitride. The affected wafers were fully processed in the wafer fab and pending assembly package processing. Bond pad...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 301-304, November 13–17, 2011,
... interface with Al2O3; however, in the first case of this work, it will be demonstrated that Pd is not suitable as coating for gate oxide (SiO2) thickness measurement on the Si substrate due to the diffusion of Pd through silicon dioxide layer forming silicide at SiO2/Si interface (see Figure 1a). The dark...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 376-379, November 14–18, 2004,
... Air 0 Plastic 2 3.5 Copper 42 Silicon 20 Silicon Dioxide ~20 Low K Dielectric << 20 When the pulse encounters an interface, the acoustic impedance mismatch of the materials forming the interface determines the amplitude and phase of the reflected echo [2]. The A-scan is a term that refers...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 229-233, November 6–10, 2016,
... correlated with the small size of the isolated Silicon well (delimited by Buried Oxide Layer and vertical trenches filled by Silicon dioxide). Such observation is consistent with Mark W Jenkins discussion where the concept of virtual ground is proposed. However, the virtual ground may be lost due...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 55-59, November 3–7, 2002,
... of detecting poly- silicon dioxide layers on a silicon wafer. The wafer shown here was the remaining part of a silicon/silicon bonded wafer where the other wafer had been removed. The purpose was to detect the presence/absence of the poly-silicon dioxide layers remaining at the bond interface and to determine...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 197-204, November 2–6, 2003,
... due to the TiSi2 break in the VSS contact. Corrective Actions The abnormal carrier spreading may be attributed to the diffusion of p-type dopants from the overlying ILD, which is made of silicon dioxide doped with phosphorous and boron and is commonly known as borophosphosilicate glass (BPSG...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 197-203, November 6–10, 2016,
... subjected to ultrasonic agitations. 1.2.2.1. HF and Silicon Oxide Chemical Reactions and Etch Mechanisms Balanced equation: SiO2(s) + 4 HF(aq) = SiF4(g) + 2 H2O(l) Where: SiO2 Silicon Dioxide (material to be etched) HF Hydrofluoric acid (etchant) SiF4 Silicon Tetrafluoride (by product) H2O water...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 119-125, November 15–19, 2009,
... of tantalum pentoxide and silicon dioxide (Ta2O5 and SiO2) was also tested, but didn t have an effect as good as the single-layer Si3N4 ARC. Present experiments are analyzing the possibility to create a silicon dioxide (SiO2) ARC directly in the FIB as part of the SIL creation process. a) b) Figure 14: Laser...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 186-190, November 14–18, 2010,
... trench the trace shows detector signal versus time, with a characteristic dip in signal once the silicon dioxide passivation is reached. With the trench floor exposed, direct sectioning and imaging of the interconnects is possible. Results from this will be covered in the Analysis Results section...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 370-375, November 12–16, 2006,
... C until the silicon die is totally dissolved. Note that the temperature and time are not critical, we have just ensure that the silicon was removed completely. The heated KOH solution only etches the silicon bulk area on the die. Layers such as Silicon dioxide, metal line, barrier metal...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 189-194, November 12–16, 2000,
... overcoat is composed of a layered composite of undoped-doped-undoped silicon dioxide. Phosphorus is used as the doping material. The structures included extrusion monitors along each side that provided both optical loading during manufacturing and an electrical monitor for any metal whisker growth during...