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Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 166-171, November 6–10, 2016,
...Abstract Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 300-304, November 12–16, 2006,
...Abstract Abstract After wafer-die sawing process, sometimes silicon (Si) dust on microchip Al bondpads is difficult to be cleaned away by DI water, especially at pinhole/corrosive areas caused by galvanic corrosion, thus resulting in non-stick on pads (NSOP) problem in assembly process...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 186-187, November 6–10, 2016,
...Abstract Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 258-267, November 6–10, 2016,
...Abstract Abstract We describe here the first demonstration of 14nm silicon device characterization using 1.55-2µm emission microscopy as a technique to interrogate the radiative properties of various physical defects. A study is presented and discussed for cases highlighting photo-emission only...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 282-286, November 6–10, 2016,
...Abstract Abstract The single-bit charge loss of flash memory after stress has been investigated using TEM with selective chemical etching and TCAD simulation for the effect of silicon dopant profile and electrical failure analysis technique. However, the abnormal dopant profile on the drain...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 299-303, November 6–10, 2016,
... EFA techniques are proven powerful and effective, including photon emission, OBIRCH, Thermal Frequency Imaging, LVI, LVP, and dynamic laser stimulation. current leakage electrical analysis failure analysis power shorts scan chains silicon system on chips wafer testing Accelerating...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 95-102, November 5–9, 2017,
...Abstract Abstract Through Silicon Via (TSV) is the most promising technology for vertical interconnection in novel three-dimensional chip architectures. Reliability and quality assessment necessary for process development and manufacturing require appropriate non-destructive testing techniques...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 214-220, November 5–9, 2017,
..., we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 246-250, November 5–9, 2017,
...Abstract Abstract Backside circuit edit (CE) remains a crucial failure analysis (FA) capability, enabling design modifications on advanced integrated circuits. [1-9] A key requirement of this activity is to approach the active transistor layer of the silicon through the removal of the silicon...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 411-415, November 5–9, 2017,
...Abstract Abstract As the Internet of Things, smart factories and autonomous driving increase the demand for low-price radar sensors, the authors address this need by developing a 24 GHz short range radar in standard bulk silicon CMOS technology for mass market production. CMOS technology...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 618-620, November 5–9, 2017,
... isolation and meticulous sample preparation to preserve the failure mechanism during failure analysis. borosilicate glass cold atom laboratory failure analysis fault isolation sample preparation silicon chips ultra-high vacuum Case Study Failure Analysis of an Ultra-High Vacuum Enclosure Made...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 363-367, October 28–November 1, 2018,
... for the characterization of the defectivity of “beyond Silicon” materials. Such a workflow addresses the requirements for large areas 10 -4 cm 2 with defect density down to 10 4 cm -2 . analytical workflow beyond silicon materials deep learning defect detection electron channeling contrast imaging large area...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 443-448, October 28–November 1, 2018,
... process more robust, we propose a proactive silicon validation based approach which not only considers the yield loss due to hard-defects but also takes into account the parametric and reliability degradation caused by DFMG violations. We evaluate the effectiveness of the proposed methodology through...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 530-533, October 28–November 1, 2018,
...Abstract Abstract The carrier distribution in solar cell is important evaluation target. Scanning nonlinear dielectric microscopy is applied to the cross section of phosphorus implanted emitter in monocrystalline silicon solar cell and visualizes the carrier distribution quantitatively...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 102-108, November 12–16, 2006,
...Abstract Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 279-288, November 12–16, 2006,
... characterization technique, which provides accurate imaging and dopant profiling capabilities for silicon carbide devices. dopant profiling failure analysis JFET MOSFET sample preparation scanning electron microscopy secondary electrons potential contrast silicon carbides wide-bandgap semiconductors...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 431-437, November 12–16, 2006,
... alteration post-silicon validation soft fault injection Application of LADA for Post-Silicon Test Content and Diagnostic Tool Validation Chia Ling Kong, Edwin P. Castro Intel Corporation, Santa Clara, California, USA chia.ling.kong@intel.com, edwin.p.castro@intel.com Abstract Embedded cache size has...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 77-80, November 4–8, 2007,
...Abstract Abstract By implementing two-photon optical-beam-induced current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height. failure analysis...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 81-85, November 4–8, 2007,
.... This shows that photon emission spectroscopy could potentially be used as a tool to monitor strain in the nMOSFET channel. 60 nm process bandgap narrowing failure analysis MOSFETs near infrared photon emission spectroscopy silicon uniaxial tensile strain Near-IR Photon Emission Spectroscopy...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 93-96, November 4–8, 2007,
...Abstract Abstract This paper deals with real-time FTIR (Fourier Transform Infrared Reflectometry) etch depth measurements performed on passive integrated silicon substrates. High-density trench capacitors are non-destructively characterized using an FTIR Michelson type spectrometer. Based...