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scanning capacitance microscopy

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Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 102-108, November 12–16, 2006,
...Abstract Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 302-306, November 6–10, 2005,
...Abstract Abstract By combining transmission electron microscopy (TEM) [1] with scanning capacitance microscopy (SCM) [2], it is possible to enhance our understanding of device failures. At Sandia, these complementary techniques have been utilized for failure analysis in new product development...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 197-204, November 2–6, 2003,
...Abstract Abstract Transmission electron microscopy (TEM) [1] and scanning capacitance microscopy (SCM) [2] have become common failure analysis tools at Sandia for new product development, process validation, and yield enhancement. These two techniques provide information that cannot be obtained...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 437-445, November 5–9, 2017,
... analysis scanning capacitance microscopy semiconductor devices To Reveal Invisible Doping Defect by Nanoprobing Analysis, Scanning Capacitance Microscopy and Simulation LiLung Lai, Li Yang, Chunhui Wang, Yong Wu Semiconductor Manufacturing International Corp. (SMIC) LiLung_Lai@smics.com No.18...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 543-546, October 28–November 1, 2018,
...Abstract Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 86-93, November 12–16, 2006,
... charges in Flash EEPROM devices is presented. Scanning Capacitance Microscopy (SCM) is used to directly probe the carrier concentration on Floating Gate Transistor (FGT) channels. The methodology permits mapping channels and active regions from the die backside. Transistor charged values (ON/OFF...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 94-97, November 12–16, 2006,
...Abstract Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 56-60, November 4–8, 2007,
...Abstract Abstract Scanning Capacitance Microscopy (SCM) is an Atomic Force Microscopy (AFM) based technique that simultaneously records topography and local capacitance with high spatial resolution. This tool is based on the high frequency MOS capacitor theory, and is routinely used in failure...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 219-222, November 4–8, 2007,
...-voltage curves doping DRAM devices failure analysis focused ion beam nanoprobing leakage current scanning capacitance microscopy Analysis of DC Failure in Advanced Memory Devices Using Nanoprobing and Scanning Capacitance Microscopy Jen-Lang Lue, Chin-Shun Lin, Atup Chiou, Hsuen-Cheng Liao...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 375-378, November 15–19, 2020,
... sample preparation for dopant profiling in FinFETs. dopant profiling dry etching failure analysis finFET devices ion milling mechanical polishing sample preparation scanning capacitance microscopy A novel sample preparation approach for dopant profiling of 14 nm FinFET devices...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 98-101, November 14–18, 2010,
...Abstract Abstract In this paper, we present our recent applications of scanning capacitance microscopy (SCM) on specific devices with sampling window as small as 100nm. The dopant related root causes were successfully identified on those devices fabricated with 90nm CMOS technology. The key...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 309-316, November 14–18, 2010,
...Abstract Abstract Scanning capacitance microscopy (SCM) has been used in electrical failure analysis (EFA) to isolate failing silicon transistors on silicon-on-insulator (SOI) substrates. With the shrinking device geometry and increasing layout complexity, the defects in transistors are often...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 316-321, November 13–17, 2011,
...Abstract Abstract Some process abnormalities can be very difficult to detect with conventional FA techniques. Scanning Capacitance Microscopy (SCM) has been shown to be a reliable and versatile tool and the case analysis presented in this work illustrates its significant role. In this paper...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 350-352, November 14–18, 2004,
...Abstract Abstract Scanning capacitance microscopy (SCM) has become a valuable tool for failure analysis in integrated circuit manufacture. The ability to perform two-dimensional dopant distribution analysis on small, specific structures has been hampered, however, by the imprecision of current...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 482-486, November 14–18, 2004,
...Abstract Abstract Traditionally, planar scanning capacitance microscopy has been conducted on samples which have been deprocessed to the level of the substrate and an oxide re-grown over the sample. However, HF used to etch the sample to the substrate can also dissolve shallow junctions...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 677-679, November 14–18, 2004,
...Abstract Abstract Scanning capacitance microscopy (SCM), a powerful technique to identify front-end defects, is also helpful in understanding failure mechanisms. This article discusses three front-end doping failure examples that were clearly identified by SCM analysis. The first example...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 307-310, November 6–10, 2005,
...Abstract Abstract Scanning Capacitance Microscopy (SCM) has been extensively used for identifying doping issues in semiconductor failure analysis. In this paper, the root causes of two recent problems -- bipolar beta loss and CMOS power leakage -- were verified using SCM images. Another...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 484-489, November 10–14, 2019,
...]. Scanning Capacitance Microscopy (SCM) has a longstanding, well-established track record for detecting dopant-related mechanisms that adversely affect device performance on planar (Field Effect Transistor) FETs as well as other structures (e.g., diodes, capacitors, resistors). The semiconductor industry’s...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 521-527, November 12–16, 2000,
...Abstract Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 41-46, November 15–19, 1998,
... microprocessors electrical leakage failure analysis photolithography polysilicon scanning capacitance microscopy wafer fabrication Scanning Capacitance Microscopy use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor Kendall Scott Wills, Hal Edwards, Long Nuygen, Rohini Raghunathan...