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resistive word line

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 258-262, October 31–November 4, 2021,
... generator in combination with an electro-optical nanoprobe. DC measurement nanoprobe oscilloscope pulsing test pulse generator resistive word line defect waveform generator ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 42-45, November 15–19, 2020,
...Abstract Abstract In this work, two analysis methods for word line (WL) defect localization in NAND flash memory array are presented. One is to use the Emission Microscope (EMMI) and Optical Beam Induced Resistance Change (OBIRCH) to analyze the device through backside, which has no risk...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 264-266, November 15–19, 2020,
... such as active and standby mode need to be considered since internal resistance from the external pad to word-line is decided by layout such as line width and length, and DRAM operation. The IR-drop is expected as shown in Figure 3. Copyright © 2020 ASM International® All rights reserved...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 538-545, November 14–18, 2004,
... electrical analysis is not performed prior to deprocessing. The problem with modern integrated semiconductor devices is that the devices usually have multiple layers of metallization and the metal lines for individual bit cells are laid out at the lower metal layers. Access to the bit lines and the word...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 471-477, November 2–6, 2003,
... (Emission microscopy) was used in failure location. Parallel lapping, FIB (Focus Ion Beam), SEM (Scanning Electron Microscopy), PVC (Passive Voltage Contrast) and TEM (Transmission Electron Microscopy) were used to inspect and confirm defects. The defects included word line leakage, open via, BLT (BLock...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 337-344, November 15–19, 1998,
...Abstract Abstract EMS analysis is widely used in the failure analysis of the semiconductor. Moreover, the availability is widely evaluated. However, EMS analysis is not often used for the defect (1 Bit failure, Word Line failure, Bit Line failure, etc.) in the cell area in the memory device...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 115-119, October 27–31, 1997,
... reviewed the electrical signature and cell layout, we suspected that one particular kind of via in the global Word Line might cause the double partial rows failures if the via was defective. Figure 1 shows the layout of local circuit (only including via and M2 line). The single via connected a global Word...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 115-120, October 28–November 1, 2018,
... 8: Plan View TEM show TS-PC Short between the 2 Nodes. Case Study 2: Node to Word Line Short A similarly designed test structure looked for Node to Word Line shorting in an SRAM environment. Again, several thousand Node contacts are wired up to test for shorting against their nearest Word Line...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 46-51, November 4–8, 2007,
.... The two probes on the right are fixed, contacting wordlines. On the left, two nanoprobes are scanning simultaneously over the array of bitlines while maintaining the bit line pitch to check for trench leakage 47 Figure 3b CAD layout of the eDRAM array with the marked probing nodes of the word lines...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 267-269, November 1–5, 2015,
... capacitance on the power supply. This has proven to provide very useful fault isolation beyond what is possible with emission microscopy. The logic LIVA result allowed the determination of locations of the two emissions seen in the IREM image as well as the word-line driver. This result provides a complete...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 204-207, November 12–16, 2006,
.... For this failure mode, logically the defect should be the shorting of bit/bit-bar line to the word line poly. To further identify the shorting location, the unit was de-processed to contact level for FIB circuit edit. Four pads were deposited for accessing to the bit/bit-bar line contacts and word line contacts...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 234-241, November 15–19, 2009,
... showing a high drain current after word line stress (WLS) up test. The unit was deprocessed down to contact level and inspected both optically and by SEM at each level. No PVC was observed at the bit of interest. The failing bit was programmed and high gate voltage was applied on the word line as a part...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 287-294, November 6–10, 2005,
... to be correct. A random wafer fabrication defect was found in the suspect control circuitry that had caused a low resistance short circuit between an internal reference signal and two other logic lines in the control circuitry of the malfunctioning output. It turned out that the location and nature...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 109-114, November 14–18, 2004,
... to debug since the failure area has been narrowed down to one, two, or several bits only. By using Scanning Electron Microscope (SEM), FIB, and Transmission Electron Microscope (TEM) at the failure sites, most of failure mechanisms can be dug out. But for some SRAM failure modes such as bit line (BL), word...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 289-295, November 15–19, 1998,
... is to measure the current-voltage curve between the bitline stud or the strap of a failing cell to its neighboring word lines, to the p-well and to the substrate [3]. For that purpose, it is necessary to deposit metal pads to these contacts of the fail cell with Focused Ion Beam. Afterwards the fail cell has...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 538-543, November 5–9, 2017,
... of 0. Note that these operations do not have to be back- to-back accesses. A word line deselection issue: the minimum sensitizing operation sequence is w0@V w1@A r0@V, where V is the victim address and A is the aggressor address at a Hamming distance of 1. These operations have to be back-to-back...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 503-511, November 12–16, 2006,
... was the most likely location of the leakage path, did not reveal any type of gate oxide defect, resistive defect or processing problems (Figures 5 and 6). Figure 3: Traditional micro-probe results of the word line and bit line for a signature bit in a 90nm CMOS SRAM partial column failure. Leakage from...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 153-162, November 12–16, 2006,
... is performed by depositing tungsten FIB pads on the bit line (BL), bit line bar (BLB), word line (WL), Power (VDD), and ground (VSS) (Figure 1) [2]. Micro-probe needles connected to a parametric analyzer are used to sweep BL and BLB; and to bias the WL, VDD, and VSS. Electrical signatures produced...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 401-408, November 14–18, 2004,
... resistance leakage path that are successfully detected at later processing layers using voltage contrast techniques with a SEM based In-line inspection tool as well as after processing by using our method of passive voltage contrast. The systematic nature of this defect produces a consistent SRAM memory fail...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 261-267, November 15–19, 2009,
... level, PVC is seen on the gate contact of the word line which has the failing bit. Nanoprobing the failing bit revealed gate to drain leakage. TEM cross section on the failing bit revealed misaligned drain contacts. Figure 19: SEM image showing PVC on the gate contact Figure 20: TEM cross section image...