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reliability

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Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 289-298, November 11–15, 2001,
...Abstract Abstract While integrated circuits are routinely modified using Focused Ion Beam systems (FIB), the reliability of these modifications has not yet been thoroughly studied. For several years, researchers at Sandia National Labs and CNES have been involved in the evaluation of the impact...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 345-348, November 11–15, 2001,
...Abstract Abstract Optical Micro-Electro-Mechanical Systems (Optical MEMS, or MOEMS) comprise a disruptive technology whose application to telecommunications networks is transforming the horizon for lightwave systems. The influences of materials systems, processing subtleties, and reliability...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 397-403, November 11–15, 2001,
.... At EMPA, EM Microelectronic Marin and CNES Toulouse, first experiences have been collected with this method, using external and CNES-owned OBIRCH equipment. It turned out, that the method does not only help to localize functional failures, but is also most suitable as a reliability-related failure...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 245-249, November 3–7, 2002,
... by combining EMMI, LC, layout and bit map address information. Some reliability failure analysis cases are presented to demonstrate the effectiveness of the beam-based techniques. VC imaging and BSE imaging are used to locate the defect site precisely. The subsequent steps include deprocess and precision FIB...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 275-281, November 3–7, 2002,
...Abstract Abstract In this paper we discuss reliability and failure analysis issues of RF-MEMS capacitive switches. We describe specific instrumentation and methods that can be used for testing and examination of these switches. These include SEM, AFM, SAM, static and dynamic optical...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 437-439, November 2–6, 2003,
...Abstract Abstract Advanced RF IC’s incorporate numerous components along with the CMOS circuitry. One component is a metal-insulator-metal (MIM) capacitor. Test capacitors have been stressed using accelerated voltage and temperature conditions to assess the long-term reliability. This paper...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 137-141, November 12–16, 2006,
...Abstract Abstract Temperature and humidity dependent reliability analysis was performed based on a case study involving an indicator printed-circuit board with surface-mounted multiple-die red, green and blue light-emitting diode chips. Reported intermittent failures were investigated...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 147-152, November 12–16, 2006,
...Abstract Abstract This paper reports on a setup and a method that enables automated analysis of mechanical stress impact on microelectromechanical systems (MEMS). In this setup both electrical and optical inspection are available. Reliability testing is possible on a single chip as well...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 228-229, November 12–16, 2006,
...-section with SEM to find the mechanism of crack growth during thermal reliability tests. The study revealed that the interfacial crack always initiated from the pad edge. This is attributed to the coefficient of thermal expansion (CTE) mismatch between underfill and the PCB substrate. The propagation...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 273-275, November 12–16, 2006,
... identification, and corrective actions taken that eventually lead to successful product qualification. 130 nm process copper failure analysis high-temperature operating life product qualification semiconductor devices 130nm Backend Reliability Failures: Analysis to Corrective Action Gil Garteiz...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 423-425, November 12–16, 2006,
...Abstract Abstract We investigated the degradation of device reliability due to Negative Bias Temperature Instability (NBTI) of PMOSFET on Strained Silicon on Insulator (S-SOI) substrates for the first time. The degradation has been found to be significantly higher for the S-SOI devices...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 457-460, November 12–16, 2006,
...Abstract Abstract In this paper, a case of package level reliability test failure was studied. A model of “Slice Defect”, which was identified as the root cause by failure analysis, is introduced. Experiment results are presented to approve that such model is in fact correct and the corrective...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 1-5, November 4–8, 2007,
... µm spatial resolution, enables unique thermal analysis of semiconductor devices to a level not possible before. This opens new opportunities for device performance and reliability optimization, and failure analysis of modern semiconductor technology, in research, development, and quality control...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 146-150, November 4–8, 2007,
...Abstract Abstract Possible reliability failure mechanisms on mixed-signal IC are reviewed and categorized. Based on the nature of reliability and low DPPM failures on mixed signal IC, an analysis flow is proposed including identification of individual failure mechanisms, extraction...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 156-160, November 4–8, 2007,
...Abstract Abstract In this paper, the application of pulsed-TIVA for the localization of Cu/low- k interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 220-226, November 2–6, 2008,
... semiconductor device degradation Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis Arkadiusz Glowacki, Christian Boit Berlin University of Technology, Berlin, Germany Einsteinufer 19, Sekr. E2, D-10587 Berlin, Germany phone: +49-30-314-24922 fax: +49-30-314-25526 E...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 349-353, November 2–6, 2008,
...Abstract Abstract The reliability of a pure CMOS One-time Programmable (PCOP) Memory was investigated. The memory is programmed with and anti-fuse formed by the breakdown of the thin gate oxide. The results of reliability stress tests show that the PCOP memory is stable and reliable for normal...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 449-458, November 2–6, 2008,
...Abstract Abstract During moisture-and-bias reliability stress tests of THBT (temperature and humidity biased test) and HAST (highly accelerated stress test) extensive electrochemical oxidation of a TiN ARC layer is seen to occur. This oxidation proceeds at the nominal temperatures and humidity...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 1-5, November 15–19, 2009,
...Abstract Abstract A new approach to reliability improvement and failure analysis on ICs is introduced, involving a specifically developed tool for Topography and Deformation Measurement (TDM) under thermal stress conditions. Applications are presented including delamination risk or bad...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 166-170, November 15–19, 2009,
...Abstract Abstract Although crystalline silicon PV technology has been in use for more than 30 years, PV has remained a "cottage industry" until the recent expansion. This paper provides an introduction to the issues of reliability in the photovoltaic (PV) field, and the work the Department...