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planar deprocessing

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Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 393-397, November 12–16, 2006,
... is exposed. In practice this has been difficult. This article describes the combination of processes that are required to take full advantage of the strength of deprocessing techniques (lapping, plasma and gel controlled wet chemical deprocessing) to deliver a perfectly planar sample for inspection...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 67-69, November 15–19, 2020,
...Abstract Abstract In the failure analysis (FA) of modern semiconductor logic device manufactured in foundry fab, efficient identification of wafer edge’s defect was studied by using volume diagnosis analysis and plasma-focused ion beam (FIB) planar deprocessing. As the chip from wafer edge has...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 269-273, October 31–November 4, 2021,
...Abstract Abstract Planar deprocessing is a vital failure analysis technique for semiconductor devices. The basic concept is to expose an area of interest (AOI) by removing unnecessary material while maintaining planarity and surface evenness. Finger deprocessing is a widely used material...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 393-396, November 10–14, 2019,
... technique that can provide a relatively accurate location of an open. Electron Beam Absorbed Current (EBAC) is another useful technique in confirming and further isolating the open as the region of interest of the sample is approached via cross-sectioning or planar deprocessing. Case studies using...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 230-233, November 1–5, 2015,
..., for it to be applied to NVM, it is not trivial to develop a deprocessing procedure to achieve planar surface throughout the array, as most NVM arrays are very large, up to a few millimeters across. Within the array, the control gate (poly line) and active areas in a column are electrically continuous. Planar...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 532-535, November 3–7, 2013,
... leaves the underlying metal lines and contacts largely intact. For removal of the exposed copper lines and contacts, water vapor can be injected to selectively and uniformly remove copper. Figure 2. Planar deprocessing SEM images from M6 down to contacts. 533 Figure 2 illustrates the FIB planar etching...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 217-224, November 11–15, 2001,
...]. Electrical characterization of submicron copper interconnects embedded in low k dielectric films presents challenges in planar deprocessing of the low k films to expose the copper interconnects. Manufacturing decisions governing the integration of low-k dielectric films using CMP processing dictate whether...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 636-639, November 14–18, 2004,
... planarity as the device is deprocessed layer by layer. This is significant for devices that have more then three layers of metal. Because the polishing rate at the edges of the device is greater then at the center, the lower layers of the device are reached first at the edge. At the center of the device...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 363-367, November 2–6, 2008,
... to such a high degree of planarity, so planar in fact that 100% of the die can be exposed at the same time and at the same ILD. Two main challenges were encountered when trying to achieve the required standard during mechanically deprocessing a single die. Challenge 1 Reproducibility When preparing what could...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 576-581, November 3–7, 2013,
... because the defects are even subtler and smaller. Hence, deprocessing using chemical methodology no longer works on planarized wafer fabrication platform. Layer by layer planar mechanical deprocessing, also known as parallel lapping has emerged as the best solution to reveal physical defects [1-3...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 505-509, October 28–November 1, 2018,
... and eventually final root cause investigation. This is also an effort to reach zero defects in the entire backend manufacturing process. References [1] J. Lau, Flip Chip Technologies , McGraw-Hill, 1996. [2] Wills, K.S. Planar Deprocessing of Advanced VLSI Devices, Proc 32nd Int l Symp for Testing and Failure...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 462-464, November 11–15, 2012,
.... Planar Deprocessing of Advanced VLSI Devices Proc 32nd Int l Symp for Testing and Failure Analysis, Austin, texas, November 2006, pp. 393-397. [2] Moor, T., Single Die Hands-Free Layer-by-Layer Mechanical Deprocessing for Failure Analysis or Reverse Engineering, Proc 34th Int l Symp for Testing...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 165-167, November 4–8, 2007,
.... There are instances where inspection or analysis will be required at multiple sites over a wide area on a sample. Traditional mechanical deprocessing techniques do not allow us to maintain planarity over a relatively large area, typically tens of microns. This article presents a 'masking technique' that addresses...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 274-278, October 31–November 4, 2021,
...] Rue, Chad; Chandler, Clive D.; Precursor for Planar Deprocessing of Semiconductor Devices Using a Focused Ion Beam, U.S. Patent Number 9064811, filed June 5, 2013, and published online on June 23, 2015. [6] S.L. Ting, et al, Simple circuit edit passive voltage contrast technique to identify leakage...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 100-104, November 9–13, 2014,
... to be performed. References [1] J. Lau, Flip Chip Technologies , McGraw-Hill, 1996. [2] H.Y. Gwee, K.K. Ng, Alternative Sample Preparation Technique for Die Level Parallel Lapping Analysis, Proc 39th Int l Symp for Testing and Failure Analysis, Proceeding, 576-581. [3] Wills, K.S. Planar Deprocessing...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 413-422, November 14–18, 2010,
... that are not easily removed without creating steep gradients over short lateral distances. This creates problems in which long metal traces can t be left completely intact for probe work during the electrical defect isolation. Although planar deprocessing solutions are now offered by some vendors they are still...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 482-486, November 14–18, 2004,
...Abstract Abstract Traditionally, planar scanning capacitance microscopy has been conducted on samples which have been deprocessed to the level of the substrate and an oxide re-grown over the sample. However, HF used to etch the sample to the substrate can also dissolve shallow junctions...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 574-579, November 5–9, 2017,
...Abstract Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 373-376, November 15–19, 1998,
...Abstract Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 194-198, November 6–10, 2005,
... as an etchant for the removal of copper metallization for the planar deprocessing of semiconductor devices with copper metallization [1]. A participant at the symposium asked if EKC265TM could be used to remove the copper metallization when using the focused ion beam tool (FIB) to cut large windows through...