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phase change memory

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Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 198-201, November 15–19, 2020,
... change memory test structure and comments upon some technique observations: advantages and disadvantages. artificial intelligence devices CMOS failure analysis phase change memory semiconductor chips semiconductor fabrication transmission electron microscopy Elemental TEM Tomography...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 472-475, November 6–10, 2016,
...Abstract Abstract The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using a transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells that had been...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 34-39, October 31–November 4, 2021,
... appeared in discrete test structures and test arrays developed as part of an exploratory phase-change memory (PCM) program at IBM's Albany AI Hardware Research Center. AI hardware electronic device failure analysis phase change memory test structures ISTFA 2021: Proceedings from the 47th...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 236-238, November 3–7, 2013,
... crystallization caused coalescence and migration of voids. These results may give us a crucial clue for endurance failure analysis of PRAM. amorphous crystallization failure analysis germanium-antimony-tellurium grain boundaries Joule heating phase change random access memory devices switching...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 206-210, October 31–November 4, 2021,
...Abstract Abstract In this work, we investigate mushroom type phase-change material (PCM) memory cells based on Ge 2 Sb 2 Te 5 . We use low-angle annular dark field (LAADF) STEM imaging and energy dispersive X-ray spectroscopy (EDX) to study changes in microstructure and elemental distributions...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 362-366, November 13–17, 2011,
... of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 190-195, October 31–November 4, 2021,
... under fixed bias and further interpretation of these results will help to enhance sample preparation and minimize its impact on physical parameters modification. There is no reason that the approach cannot be applied to more complex electronic devices (transistor, phase change memory) by modifying...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 382-386, November 13–17, 2011,
... and with the use of a thermal stream, ambient temperature. Typical memory test algorithms consist of a number of phases with a collection of various read and write elements within each phase. Noting the background data pattern and the address sequence completes the description of the pattern. The syntax used here...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 88-90, November 6–10, 2016,
... Line (BL) capacitance, cell node resistance, supply-voltage and the surround noise. The elements were changed by decreasing the cell node dimensions. The write time (tWR) is degraded by changing the elements. In particular, the noise is very variable element on change of surrounding cell phase which...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 68-73, November 13–17, 2011,
... of the involved materials allowing the use of dedicated 3D SW, which will be discussed in more detail with the second case study. Advanced 3D defect localization based on phase-simulation SW In contrast to the DUT of the first case study, most commercially available stacked memory devices consist of 8 stacked...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 495-500, November 5–9, 2017,
... images. Data are presented on the Figure 10 and are obtained in around 30mn. Figure 10: Phase and Amplitude of the intensity of the reflected laser in the MO crystal obtained on the failed memory for a bias at 1V, 15mA and a frequency of 125kHz. As MOFM technique is based on a laser scan trough optical...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 347-351, October 31–November 4, 2021,
... and Integration Options for 3D NAND Flash Memories, Computers, Vol. 6, No. 3 (2017), p 27. doi:10.3390/computers6030027 [2] C.H. Chang, et al., Word Line Defect Localization Methods in 2D NAND Flash, Proc 46th Int l Symp for Testing and Failure Analysis, December 2020, p 42-45. doi: 10.31399...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 336-339, November 10–14, 2019,
... storage flash memory floating poly gate integrated circuit chips magnetoresistive random-access memory nanoprobing one time programmable memory phase-change random access memory read-only memory semiconductor failure analysis Abstract- Non-volatile memory is the most important memory device...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 214-220, November 5–9, 2017,
...) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI. 14 nm process diffusion dynamic laser stimulation FinFET integrated circuits laser voltage imaging memory built...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 393-400, November 14–18, 2004,
... test structures helps in identifying process weaknesses not necessarily detected within the SRAM memory: Thermal Laser Stimulation (TLS) techniques and subsequent physical characterization are successfully used to detect certain show-stoppers in the yield- ramp phase. After a successful Time...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 465-468, November 11–15, 2001,
... with the increasing microprocessor clock speeds, it has been necessary to embed large memory arrays (caches) on the same die as the microprocessor core. This has forced manufacturing to rely on these arrays for processes monitoring and yield enhancement activities.1,2 Locating defects in these arrays requires mapping...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 86-93, November 12–16, 2006,
... is reached and its threshold voltage is negative. Figure 8: Contact AFM (Figure 8-1) Amplitude SCM (Figure 8-2) cantilever deflection (Figure 8-3) and Phase SCM (Figure 8-4) scans on active regions level prepared form the backside of 2T-cell Flash memory from Atmel. The blocked FGT channels ( 1 for Atmel...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 376-385, November 3–7, 2013,
... of phase intensity image of in-situ device Figure 24: Thermal time constant image of in-situ device. Scale is 0-200 msec We also repeated measurements on a memory swap condition tested with the ON/OFF modulation, e.g. sequence of no-ops in State A and a sequence of memory swaps (read variable 1, swap...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 22-25, October 28–November 1, 2018,
... is 175 m thick, the silicon die is 50 m and the DAF under the silicon die is 26 m. The filler density is much higher at the die surface than at the top of the package, and this changes the thermal time constant of the molding compound. Rise Time (mS) Phase Shift Early Time Late Time 20mW 129.1 45.4...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 1-5, November 1–5, 2015,
.../O pins [9] or phase-locked loop (PLL) fails [10]. It does not apply to product logic hard failures in the absence of periodic switching states. Although laser probing technique which utilises the same low noise 1300nm continuous wave (cw) wavelength laser as frequency mapping can be employed...