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parallel lapping

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Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 576-581, November 3–7, 2013,
...Abstract Abstract Parallel lapping (often called delayering) is a commonly used process in failure analysis of integrated circuits. However, parallel lapping commonly gives rise to the issue of weak sample preparation method especially on specimen mounting. The traditional specimen mounting...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 191-196, November 2–6, 2003,
... analysis used both top and backside analytical techniques, including liquid crystal, photon emission microscopy from both front and back, dual-beam focused ion beam cross-sectioning, field emission scanning electron microscopy imaging, parallel-lap/passive voltage contrast, microprobing of parallel-lapped...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 314-317, November 1–5, 2015,
...Abstract Abstract This paper aims to discuss the processes involved in establishing a more rapid approach in exposing the polyfuse and thin film fuse using the reactive ion etching, chemical deprocessing and parallel lapping techniques. The results proved that parallel lapping technique...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 471-477, November 2–6, 2003,
... by chemical de-processing, parallel lapping, FIB, SEM, PVC and TEM techniques were employed to identify the failure mechanisms, root causes, and solutions. From this study, improvements were achieved in process defect density, test fault coverage and product reliability of the 0.18µm Flash ROM technology...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 172-175, November 14–18, 2004,
... parallel lap and inspection times using the SEM is difficult and tedious, thus leading to long cycle times and low resolution rates. There exists a need for precise fail site isolation. In many cases, no single technique can be used to narrow down a fail site significantly. Instead a combination...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 644-648, November 14–18, 2004,
... Lead TQFP (14x20x1.4mm) plastic package. The devices first failed on boards in the field. After de-soldering them from the boards, the devices were tested and found to have resistive pin-to-pin shorts. Common failure analysis techniques, including parallel lapping, cross sectioning, and X-ray, failed...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 262-265, November 6–10, 2005,
... on differentiating defective capacitors which failing due to vertical shorting. Internal probing between the capacitors within a stack allowed the differentiation between capacitor leakage and capacitor-capacitor shorting. For capacitor leakage, the defect can be identified by parallel lapping to remove the upper...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 100-104, November 9–13, 2014,
... analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 370-374, November 15–19, 2020,
...Abstract Abstract Physical FA innovations in advanced flip-chip devices are essential, especially for die-level defects. Given the increasing number of metal layers, traditional front-side deprocessing requires a lot of work on parallel lapping and wet etching before reaching the transistor...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 448-451, November 3–7, 2013,
... are then correlated with known critical package and assembly geometries to determine how far parallel lapping should proceed to ensure that the areas of interest will become observable under acoustic microscopy without interfering with the functionality of the device. bond lifting copper corrosion cracks...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 501-504, November 3–7, 2013,
...Abstract Abstract This paper introduces a simple and effective technique of backside de-processing procedure. This technique reduces time and steps by simple wet etching. The front-side deprocessing requires many steps, such as wet and dry etching and parallel lapping, and also backside de...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 490-495, October 28–November 1, 2018,
..., visualization of the defect might not be straight forward after the decapsulation because the defect may be embedded or buried underneath a layer or wedge bond on the die. In this case, a more complicated FA analysis flow which comprises various precision techniques such as parallel lapping, hotspot...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 366-368, October 31–November 4, 2021,
... flip-flop) was narrowed down to a few chain links and ultimately pinpointed using EOP fault isolation techniques. The failed device was then deprocessed by parallel lapping and analyzed in a SEM, revealing a broken poly gate as the physical cause of failure. electrical fault isolation electro...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 613-618, November 6–10, 2016,
... on the unit also did not reveal any evidence of electrical overstress. Parallel lapping and SEM/EDX Hence for a subsequent failing unit, SN2 a different approach of parallel lapping the package was performed. As parallel lapping approached the wire loop of the affected pins, the presence of a particle (Figure...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 79-84, November 2–6, 2008,
...) gap and also no related circuit presents. If the short occurred horizontally, it could be observed by OM during delayering. The first OBIRCH sample was delayered using the conventional PFA technique, parallel lapping and layer-by- layer inspection [4]. Figure 4(a) shows the SEM image of the abnormal...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 319-322, November 11–15, 2001,
... of the device, this new technique involved two steps, i.e. selective wet-etch of passivation and inters metal dielectric layers and mechanical parallel lapping polishing. Figure 2 shows the cross section diagram of advanced integrated circuit. The metallization is Al-Cu and the intermetal dielectric is HDP USG...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 105-109, November 2–6, 2003,
... the technique. The heat sink on the back side of the flip chip sample was first removed using a razor blade. The backside is then thinned down by parallel lapping (figures 3-4). The thinned backside sample is then subjected to fault isolation such as emission microscopy (EMMI), Liquid Crystal, Light induced...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 177-185, November 12–16, 2000,
... because of working with NIR wavelengths [5]. Before silicon thinning, the molding compound lo- cated above the back side of the die, the die pad and the die attach adhesive have to be removed. This can be accomplished by using a precise milling tool or by parallel lapping. Because in our case the die pad...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 141-146, November 12–16, 2000,
... STI and LI process technologies created problems during die de- processing. Electron charging at top of the LI can confuse the analysts in localizing a defective gate. Due to STI replacement on traditional LOCOS process, dummy poly on field oxide is no longer a good parallel lap reference...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 242-247, November 13–17, 2011,
.... Further physical failure localization (PFI) to a smaller area of interest during physical failure analysis (PFA) is usually required. During PFA, it is a common practice to perform de-processing using parallel lapping (p-lapping), starting from the top surface of the die and working, layer by layer...