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optical beam induced current obic analysis

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ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 461-464, November 15–19, 1998,
... in initial part thickness, as well as part wedge and bowing. In this paper we describe an optical beam induced current (OBIC) method for accurate closed-loop endpointing with direct reference to the active device surface on the flipped die. The method relies on an exponentially increasing current...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 272-277, November 15–19, 2009,
...Abstract Abstract Laser-based failure-analysis techniques such as optical beam-induced current (OBIC) or optical beam-induced resistance change (OBIRCH) involve scanning a focused laser beam across a sample by means of a laser scanning microscope (LSM). In this paper, we demonstrate a new...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 255-263, November 11–15, 2012,
... analysis, and OBIC (Optical Beam Induced Current) as a non-destructive technique for detecting and localizing various defects in semiconductor devices. This failure analysis tool was a high resolution optical infrared photon emission microscope used mainly in microelectronics for qualitative analysis...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 381-386, November 18–22, 1996,
... techniques are exhausted. The flipchip process, however, makes topside analysis impractical in most situations. There are several different techniques that are currently being used for backside analysis. These are emission microscopy (3), optical beam induced current (OBIC) (4), and a combination of software...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 305-311, November 11–15, 2001,
...: emission microscopy, liquid crystal analysis, and electron beam (e-beam) probing with focused ion beam (FIB) milling. The backside techniques are optical beam induced current (OBIC) and optical beam induced resistance change (OBIRCH). We discuss the fault mechanism, including the relation between the “hot...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 159-163, October 27–31, 1997,
...Abstract Abstract This paper describes a new technique, called the Light-Induced State Transition (LIST) method, that uses an optical beam induced current (OBIC) system for failure analysis of CMOS LSIs. This technique allows the user to locate a low signal line shortcircuited to a GND bus...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 25-29, November 15–19, 1998,
.... Results showed that NF-OBIRCH method has three advantages over the conventional OBIRCH method: its spatial resolution is higher; the OBIRCH caused by heating can be observed using the metallized probe without interference from the optical beam induced current; and the OBIC can be observed using...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 543-551, November 3–7, 2002,
... undergoing aimed at evaluating the influence of a molten silicon filament on the Optical Beam Induced Current. Single Contact Optical Beam Induced Current (SCOBIC)9 analysis was also attempted but did not yield as good results as those from the NB-OBIC technique. The p-n junctions could be identified...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 335-341, November 14–18, 1999,
... numbers of I/O outputs can involve backside and frontside fault localization techniques such as emission microscopy, OBIC (Optical Beam Induced Current) using I.R. laser scanning microscopy, LIVA (Light Induced Voltage Alteration) [1,2], and PICA (Picosecond Imaging Circuit Analysis)[3,4], to identify...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 336-339, November 13–17, 2011,
...Abstract Abstract Optical or light beam induced current (OBIC or LBIC) are well known techniques for the analysis of integrated circuits and the study of electrically active materials in material science. They are also natural methods for analysis of photovoltaic cells, as the photocurrent...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 185-188, October 27–31, 1997,
... of a laser scanning microscope (LSM). The LSM has four main analys is features: photoemission (FE) microscopy, optical beam induced current (OBIC), confocal microscopy and infrared laser scanning microscopy [1]. The analysis of the LEOs utilizes two of these features, PE microscopy and OBlC analysis...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 393-399, November 18–22, 1996,
... side. This paper discusses fault isolation techniques and procedures used on the back side of the die. The two major back side techniques, back side emission microscopy and back side OBIC (Optical Beam Induced Current), are introduced and applied to solve real problems in failure analysis. A back side...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 472-482, November 15–19, 1998,
.... Backside PEM picture of a .33 µm device after unit was thinned to approximately 300 µm. (c) 1998 ASM International(R) 7 Optical Beam Induced Current Using the Laser Scanning Microscope with an infrared laser, Optical Beam Induced Current (OBIC) analysis can be conducted. The chosen wavelength of the laser...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 331-341, November 11–15, 2001,
... cell shows clearly an etch-out on one side, but this preparation does not allow one to localize the dielectric breakdown. Figure 9: Etch-out at failing trench after top-down delayering using 100:1 HNO3:HF etch to remove the top Poly-Silicon. A rough location was obtained by using optical beam induced...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 446-453, October 31–November 4, 2021,
...Abstract Abstract This paper describes optical and electron beam based fault isolation approaches for short and open defects in nanometer-scale through-silicon via (TSV) interconnects. Short defects are localized by photon emission microscopy (PEM) and optical beam-induced current (OBIC...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 533-539, November 6–10, 2016,
... that both OBIC and OBIRCH signals can provide device characterization information from an MpOBIC system. diodes failure analysis fault localization multiphoton optical beam induced current optical beam induced resistance change ring oscillators Multi-Photon OBIC for Device characterization...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 224-230, November 14–18, 2010,
... be effective at localizing temperature sensitive, non- catastrophic defects, we don t find it particularly useful for localizing circuit marginalities in non-defective DUTs due to the small timing perturbations caused by temperature changes [2]. Optical Beam Induced Current (OBIC) is another technique based...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 251-256, November 18–22, 1996,
...-resolved measurements are presented and compared to those obtained by OBIC measurements. capacitive coupling electrical pulse propagation failure analysis fault localization integrated circuits laser scanning microscopy optical beam induced current optical stimulation time-resolved...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 369-375, November 3–7, 2013,
... analysis of MEPVs. failure analysis light induced voltage alteration microsystems-enabled photovoltaics optical beam induced current seebeck effect imaging solar cells thermally induced voltage alteration Comparison of Beam-Based Failure Analysis Techniques for Microsystems- Enabled...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 108-111, November 2–6, 2008,
... Current (OBIC) imaging. electronic packages failure analysis integrated circuits laser marking optical beam induced current imaging thermally induced voltage alteration An Analytical Technique to Assess the Risk of Laser Damage to Encapsulated Integrated Circuits During Package Laser Marking...