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nanoprobing

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Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 97-101, November 6–10, 2016,
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 102-107, November 6–10, 2016,
...Abstract Abstract As technology continues to scale down, semiconductor devices and circuitry have become more complex. The layouts are more integrated and the devices do not isolate at contact level like they used to. Due to this, nanoprobing cannot always localize the defect to one gate finger...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 108-111, November 6–10, 2016,
... and useful. diodes failure analysis fault location leakage current MOS nanoprobing p-n junction transmission electron microscopy Further Localization of the Minor Junction Leakage Fault by Nano-probing H. S. Wang, C. C. Lin, T. Y. Sung, K. C. Chang, S. C. Yang, W. S. Hung and H. C. Liou...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 128-131, November 6–10, 2016,
...Abstract Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 132-136, November 6–10, 2016,
..., but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 427-431, November 5–9, 2017,
..., but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 432-436, November 5–9, 2017,
...Abstract Abstract This paper illustrated the beauty of AFP nanoprobing as the critical failure analysis tool in resolving the one-time programmable (OTP) non-volatile memory data retention failures through electrical simulation in wafer fabrication. Layout analysis, electrical simulation using...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 437-445, November 5–9, 2017,
... related to dopants are often referred to as invisible defects. New techniques have been incorporated into failure analysis to reveal the invisible defects resulting from electrical carriers (via SCM/SSRM) and physical doping profile (via STEM/EDS) in nm-scale dimension. Using nanoprobing analysis...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 464-468, November 5–9, 2017,
...Abstract Abstract As the technology scales down, SEM (Scanning Electron Microscope) based nanoprobing faces challenges. Transistors are more susceptible to electron beam damage. As SEM energy decreases to prevent damage, imaging resolution degrades, making it increasingly more difficult...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 469-472, November 5–9, 2017,
... absorbed current failure analysis fault isolation semiconductor devices Nanoprobing based EBAC technique from backside as well as frontside to isolate logic fails for otherwise non visual defects Sreenath Arva, Satish Kodali, Lucile Sheridan, Karthik Kalaiazhagan, Chong Khiam Oh GLOBALFOUNDRIES Inc...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 303-308, October 28–November 1, 2018,
... to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 387-396, October 28–November 1, 2018,
...Abstract Abstract In this paper, we demonstrate a novel nanoprobing approach to establish cause-and-effect relationships between voltage stress and end-of-life performance loss and failure in SRAM cells. A Hyperion II Atomic Force nanoProber was used to examine degradation for five 6T cells...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 397-402, October 28–November 1, 2018,
...Abstract Abstract Nanoprobing, electrical probing (DC electrical measurement of semiconductors using nanoscale probes) on an electron microscopic scale, and EBAC, a high-resolution, static technique, can be used for isolating defects and improving failure analysis success rates on both logic...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 167-171, November 12–16, 2006,
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 264-267, November 12–16, 2006,
... was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic. 90 nm process erratic detection failure mode analysis nanoprobing transistors Combine Nano-Probing Technique with Difference Analysis to Identify Non-Visual Failures Cha-Ming Shen, Tsan-Cheng...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 512-516, November 12–16, 2006,
... memory block. Nanoprobing was used for electrical localization at the cell level by means of a Multiprobe atomic force probe (AFP) system. Fail areas exhibit very weak PFET drain currents several orders of magnitude below the target values, while the drain currents of NFET cell transistors...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 517-520, November 12–16, 2006,
.... copper metallization failure analysis gate leakage current gate oxide breakdown nanoprobing NMOS static random-access memory Nano-probing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect Cheng-Piao Lin, Chin-Hsin Tang, Cheng-Hsu Wu, Cheng-Chun...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 219-222, November 4–8, 2007,
...Abstract Abstract This paper discusses the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. Current-Voltage (I-V) curves measured by the nanoprobing technique...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 223-225, November 4–8, 2007,
... microscope SRAM static noise margin transistors voltage transfer curves Measuring Static Noise Margin of 65nm Node SRAMs Using a 7-point SEM Nanoprobing Technique Richard E. Stallcup II, Ph.D., and Zachary Cross Zyvex Instruments L.L.C., 1321 North Plano Road, Richardson, Texas, 75081, USA William...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 445-448, November 2–6, 2008,
...Abstract Abstract As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective site identification during...