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low-current soft fails

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 253-257, October 31–November 4, 2021,
... Analysis Conference October 31 November 4, 2021 Phoenix Convention Center, Phoenix, Arizona, USA DOI: 10.31399/asm.cp.istfa2021p0253 Copyright © 2021 ASM International® All rights reserved. www.asminternational.org EBIRCH localization for low-current soft fails Gregory M. Johnson ZEISS Microscopy...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 101-105, November 6–10, 2005,
... like Vt imbalance, low Gain, asymmetrical Vt, ID (Drive current) and Ron. Case studies of an asymmetry phenomenon reported here lead to a correlation between the failure mode and the electrical measurements. This paper demonstrates a suitable electrical methodology and characterization by Nano-Probing...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 428-436, November 2–6, 2008,
...Abstract Abstract This paper presents case studies that examine low voltage, low current electrical characterization and analysis of data that could help identify root cause failure mechanisms for soft transistor failures, providing a review of Vt shifts and blocked LDD implants review...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 38-42, November 15–19, 2009,
...-intensity (bottom) laser exposure. Low Laser Intensity exposure IDD = 1.9 mA Failed Device After High-Intensity Laser Exposure Good Device Low Laser Intensity Exposure IDD = 1.9 mA High Laser Intensity Exposure IDD = 2.4 mA Abrupt change in VREFOUT from 0 V to 1.1 V FAILED PASSED Abrupt current...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 21-27, November 3–7, 2002,
... effects on the device performance. These variations can translate into variations in the transconductance, drain drive current and threshold voltage (Vt) which in turn can cause soft defect errors in the test vector. Transistor variations can also wreak havoc on sub-threshold leakage currents leading...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 31-34, November 1–5, 2015,
... on analog and mixed-signal ICs Generally, a soft defect is sensitive to temperature which results in the pass/fail test result also depending on the temperature. OBIRCH monitors the current variation while the laser was heating every pixel of the circuit. The effect of laser heating when performing OBIRCH...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 158-163, November 13–17, 2011,
... Drop Out (LDO) voltage regulator with reset and enable which failed for low out-of-specification (4.84V) output voltage at elevated temperature. No current leakage was noted on any of the external pins. Neither photoemission analysis nor OBIRCH testing revealed any abnormalities. Bench testing revealed...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 396-399, November 9–13, 2014,
... trigger. The individual supply currents on the DUT can be measured in the failing condition to find any deviation from the reference unit. If such a supply current deviation is identified, a low value resistor can be placed in-line with the affected supply line, and a current shunt monitor circuit (Fig. 4...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, e1-e99, October 31–November 4, 2021,
... different Fail Flag Vectors in pattern Fail Flag=1 Vector Fail Flag vectors are identical except for Fail Flag value 18 [AMD Official Use Only] LADA/SDL Tool Fail Flag Input Analog Input Digital Input Pixel Color = Test Fail Flag Pixel Color = Black (low) or White (high) Result Signal Types Fail Flag...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 269-272, November 2–6, 2008,
... the suspected failure point on the failing sample using the novel technique. If we force all the input pins to go high, both the current flowing to the CMOS inverter and the voltage becomes low at the output of the CMOS inverter. Normally, the current passes through the internal circuit and the output terminal...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 137-140, November 6–10, 2016,
... for subsequent analysis [1-3]. In this article, the cause of the increase in the contact resistance and the decrease in the current driving ability of the transistor was due to unformed CoSi2. The analysis techniques included a nano-prober and EELS elemental mapping of a TEM. Results With the extracted fail...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 410-414, November 10–14, 2019,
... is also made simultaneously. Now, depending on whether the current measurement has exceeded the fail threshold or hasn t, a trigger is either set to a high or low value respectively. The part is then reset, and the process is repeated. This represents a symmetric test program cycle where the pass and fail...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 430-433, November 3–7, 2013,
... and suspected PMOS transistor structure. (a) (b) Figure 7. GDS layout for OTP structure in MPW device: (a) low magnification, (b) high magnification and (c) suspected PMOS transistor. APF current imaging on first performed on the suspected PMOS region at decoder region. Unfortunately, there was no abnormal...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 141-146, November 1–5, 2015,
...) and/or Controller DA, wires). Analysis and Discussion Initial verification testing ran with stop-on-fail settings in order to protect ATE hardware. It highlighted the VDD supply was drawing excess current (Figure 3, pin 29) identifying excess leakage current and soft breakdown in the Low Side FET (pins 8-12...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 38-41, November 14–18, 2004,
... the layers of metal and dielectric from the failing location and inspect with Scanning Electron Microscope (SEM). This method is still sufficient for some hard failures caused by particles, missing contact or gross patterning defects. However, SEM inspection alone has had very low success rate to resolve...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 254-260, November 15–19, 2009,
... rights reserved. www.asminternational.org 254 reference 0 and reference 1 bits were also nanoprobed. The read curves of all 3 bits seemed to be 1, i.e. low Vt s and high currents at 5V (5V is the spec). The failing bit & reference 1 bit didn t pass the soft programming tests due to high injection...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 426-430, November 12–16, 2006,
... of the schematic of this differential amplifier is shown in Fig. 8. The nFETs of these sense amplifier allow a current if the voltages of the internal data line signals MDQ and bMDQ have a high level of VBLH. If the MDQ carries a low signal, it will be smaller than VBLH, so less current is going through. The nFETs...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 151-157, November 6–10, 2005,
... Failure 500V No Failure No Failure 1KV Soft Failure Soft Failure 2KV-4KV Soft Failure Soft Failure 500V-1KV No Failure No Failure 2KV Soft Failure Soft Failure 3KV-4KV No Failure No Failure Video 500V-4KV Soft Failure Soft Failure USB 500V No Failure No Failure System Current ESD Test(EN61000-4-2) DCD...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 383-386, October 28–November 1, 2018,
... represent source current, drain current, gate current and bulk current, respectively. Among all 30+ measured transistors within/near the PEM site, one NFET transistor showed abnormal IV characteristics. Figure 3 shows the linear plot of IsVg curves from the fail and its reference at linear condition...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 313-321, November 3–7, 2013,
... where the die was in the low current state. Next, the device was run and the pattern was halted in the higher current state (at the failing latch cycle). This time the low current image was used as the background image, and it was subtracted from the high current image. The resulting image provided...