1-20 of 741 Search Results for

leakage current

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 419-424, November 11–15, 2001,
... for the improved product yield. Substantial yield loss has been observed in the product wafers due to excessive soft current leakage in the guard ring PtSi Schottky diodes [1]. Physical failure analysis has determined that these leakages were related to the presence of dislocations in the active device regions...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 667-672, November 3–7, 2002,
... and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 324-328, November 15–19, 2009,
... encountered in sample preparation or due to detection methodology choices for every isolation technique have to be addressed in order to localize the defective sites. electrical characterizations failure mode analysis IC devices leakage current root cause analysis sample preparation Challenges...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 407-411, November 3–7, 2013,
...Abstract Abstract We demonstrate an effective way of reducing off-leakage current in sub-wordline driver pMOSFETs with lightly-doped source/drain, where gate-induced drain leakage current is much relaxed, compared with those of asymmetric source/drain. In mobile DRAM, one of key parameters...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 387-390, November 3–7, 2002,
...Abstract Abstract The light emission from ever increasing OFF-state leakage currents in advanced CMOS technologies can now be reliably measured using existing photon detectors. The measurements of such an emission provide valuable information about the operation of ICs. In this paper we suggest...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 62-65, November 14–18, 2010,
... in leakage current, providing further confidence for physical failure analysis. electrical testing electron-beam induced current emission microscopy failure analysis fault isolation flash memory focused ion beam leakage current scanning electron microscope Fault Isolation of Sub-surface...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 82-87, November 14–18, 2004,
...Abstract Abstract Superconducting Quantium Interferance Device (SQUID) microscopy uses detection of magnetic fields to image current paths within electronic devices and has been successful in non-destructively identifying the location of low leakage currents, even when the failure site...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 209-213, November 2–6, 2008,
... it even more difficult to pinpoint the node leakage defect. In this study, first, the node leakage was verified at contact level using the nano-probing technique. In the second step, the sample was deprocessed into the p well level and a current image was obtained, confirming the node leakage...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 303-308, October 28–November 1, 2018,
... the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 205-209, October 27–31, 1997,
...Abstract Abstract A method of measuring moisture in the ceramic Package (pKG) without the destruction of the samples was developed (We define KNH method: kinahi method). The moisture oondition in the cavity can be oonfirmed by the temperature dependence of the leakage current between adjaoont...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 183-188, November 14–18, 1999,
...Abstract Abstract This paper describes a new technique for measuring junction temperature with high accuracy in accelerated operational tests (junction temperature ≥200°C) based on the measurements of temperature dependence of gate-leakage current on a GaAs FET (gate-leakage method). The gate...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 277-279, November 15–19, 2020,
...Abstract Abstract As dimension shrinkage, uncommon phenomena have been occurring during write and read operation in DRAM. These phenomena are strongly related cell capacitance, and the sensitivity of leakage current increases. Leakage current, especially in cell capacitor or cell transistor...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 31-37, October 27–31, 1997,
... in subthreshold field leakage. In addition, the subthreshold leakage current between the two diffusions on the test structures increased as a function of stress voltage and time - similar to the failing signature of the actual SRAM. The mechanism responsible for the latent increase in leakage current is believed...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 418-423, October 28–November 1, 2018,
...Abstract Abstract An effective method is presented to locate certain failure sites on exposed junction of insulated-gate bipolar transistor (IGBT) devices. High emitter to collector leakage current, hereafter called ICESR, is an IGBT failure mode. The leakage current is typically related...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 424-428, October 28–November 1, 2018,
...Abstract Abstract An effective method is presented to locate certain failure sites on exposed junction of insulated-gate bipolar transistor (IGBT) devices. High emitter to collector leakage current, hereafter called ICESR, is an IGBT failure mode. The leakage current is typically related...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 120-125, November 14–18, 2004,
...Abstract Abstract The introduction of p+ implanted areas at the drain side of source-drain-gate salicide-blocked electro-static discharge (ESD) protection diodes resulted in a better ESD robustness, however at the expense of increased leakage currents in up to 40% of the 90nm technology test...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 239-242, November 3–7, 2013,
... current and lower ON current than expected. After physical analysis, slightly remained hard mask was detected by TEM. Chemical processing was followed to determine the gate electrode (WSi2) connection to tungsten contact. It was also proven that when gate is floated, more leakage current flows compared...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 713-722, November 3–7, 2002,
... current by scaling the total leakage current over multiple measurements. In previous work, a resistance model for QSA was developed and demonstrated on a small circuit. In this paper, the weaknesses of the original QSA model are identified, in the context of a production power grid (PPG) and probe card...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 432-435, November 6–10, 2005,
...Abstract Abstract Hot electron induced beta degradation has been observed from fiber optic transistors after multiple parametric testing. Beta degradation originated from increasing base leakage current due to the multiple testing. Base leakage current increases were directly related to the hot...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 306-308, October 31–November 4, 2021,
...Abstract Abstract This paper presents a novel approach for detecting channel hole bending (ChB) defects in vertical NAND flash memory. Such defects are the result of etching process inconsistencies and contribute to data loss and device failure by inducing leakage current between adjacent...