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integrated circuits

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Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 166-171, November 6–10, 2016,
... altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 258-267, November 6–10, 2016,
..., hybrid photo-thermal-emission, and thermal-emission only. 14 nm process emission microscopy failure analysis integrated circuits semiconductor devices silicon Characterization of 14nm Silicon Integrated Circuits with 1.55 2 m Emission Microscopy: A Case Study K. A. Serrels, A. Kalarikkal...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 285-298, November 5–9, 2017,
... instrument control and near real-time data analysis to establish a computationally guided microscopy suite. deprocessing electrical testing failure analysis integrated circuits microanalysis plasma focused ion beam scanning electron microscope silicon X-ray tomography Steps Toward Automated...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 580-584, November 5–9, 2017,
...Abstract Abstract Validation techniques on packaged integrated circuit (IC) samples positively impact time to market (TTM) by saving considerable fabrication modification turnaround time and costs. The validation techniques are typically done by working through the backside of the chip...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 496-504, October 28–November 1, 2018,
...Abstract Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 327-330, November 4–8, 2007,
... to be a successful approach. It is also proved how this methodology would work for such non-recognizable failures. CMOS process digital logic applications failure analysis microprobing mixed-mode integrated circuits optical beam induced resistance change radio frequency Combine Micro-Probing...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 108-111, November 2–6, 2008,
...Abstract Abstract Damage to encapsulated integrated circuits has recently been reported due to Laser marking of the package. A method to assess the risk of such damage is presented. The method is an analytical technique using Thermally Induced Voltage Alteration (XIVA) and Optical Beam Induced...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 180-187, November 2–6, 2008,
... injection should occur. It is also demonstrated that the technique is able to identify the most sensitive signal condition for fault injection with a better time resolution than the pulse width of the laser, a significant improvement for failure analysis of integrated circuits. failure analysis fault...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 27-32, November 15–19, 2009,
...Abstract Abstract The capability of the Scanning Electron Acoustic Microscopy (SEAM) technique for high resolution non-destructive subsurface imaging at different depths for a multi-level integrated circuit is assessed. Experimental results using a beveled DRAM IC sample are used to quantify...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 133-136, November 14–18, 2010,
... wires, die, or substrate exposed, typical failure analysis methodology can then be applied to drive root cause failure analysis or device characterization. copper decapsulation integrated circuits laser ablation laser marking Nd:YAG lasers plastic encapsulation root cause analysis...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 297-300, November 14–18, 2010,
... that can be used to identify localized leakage at previously unattainable low levels. electrical leakage failure analysis integrated circuits near-infrared radiation A Novel Technique for Localization of Low Level Leakage in Integrated Circuits A. Chiang, H. Wu, H. Nguyen, W. Pratchayakun...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 242-247, November 13–17, 2011,
...Abstract Abstract This paper presents a novel backside de-processing technique for effective failure analysis of advanced multi-level interconnect metallization CMOS ICs with flip chip package. 40 nm process backside de-processing CMOS integrated circuits failure analysis flip chip...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 406-409, November 13–17, 2011,
.... chromatic aberration metal-oxide-semiconductor circuits optical design photon emission microscopy silicon aplanatic solid immersion lens Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits A. Yurt, E. Ramsay, F. H. Köklü, M...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 1-5, November 11–15, 2012,
... in the failure analysis flow and highlight its significance in root-cause identification. fault isolation integrated circuits laser voltage probing root cause analysis silicon on insulator Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI Ravikumar, V.K.1, Wampler, R.2...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 223-227, November 11–15, 2012,
... and RF-SDL was found to yield the best result. capacitive coupling failure analysis laser voltage imaging radio-frequency integrated circuits soft defect localization Advanced Laser Probe Techniques Applied to FA of RF Integrated Circuits - A Case Study Mark Kimball Maxim Integrated Products...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 491-497, November 11–15, 2012,
...-high purity and fine dimensional control since it is a dry process relying on pyrolytic vapor phase reactions initiated, and constrained, by a pulsed laser. chemical etching failure analysis focused ion beam integrated circuit editing pulsed lasers silicon surface preparation wafer level...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 168-172, November 3–7, 2013,
...Abstract Abstract We present a new method of imaging integrated circuits (ICs) using a dual-laser scanning confocal microscope. In this method we introduce physical and/or functional changes to the integrated circuit using the first ‘pump’ laser and then image the response of the circuit using...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 173-181, November 3–7, 2013,
... and quantitative evaluations are presented for both techniques, with lateral resolutions demonstrated with sub-100nm performance. A simplistic signal response rate comparison analysis of these two technologies is also presented. 28 nm process integrated Circuits laser-assisted device alteration...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 534-537, November 14–18, 2004,
...Abstract Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 658-659, November 14–18, 2004,
..., is detected as the endpoint. A methodology for the future experimental verification of the proposed model is also described. electronic circuits failure analysis focused ion beam system integrated circuit modification milling sputtering High Aspect Ratio Via Milling Endpoint Phenomena in Focused...