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indium phosphide substrates
ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 146-149, October 31–November 4, 2021,
..., Redondo Beach, CA, USA Abstract The sub-50 nm Indium Arsenide Composite Channel (IACC) High Electron Mobility Transistors (HEMTs) are fabricated on 100 mm Indium Phosphide (InP) substrates. This technology offers the best performance for low-noise and high-frequency, space and military applications...
ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 14-19, November 14–18, 2010,
... arsenide (GaAs) or indium phosphide (InP) wafers for that matter. In addition, the generated charge trail i.e. the level of carriers generated as a function of laser intensity produced through the TPA process differs in appearance to that generated through single-photon absorption. Ramsay et al [10...