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high electron mobility transistors

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Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 214-219, November 2–6, 2008,
...Abstract Abstract III-V HBT (Heterojunction Bipolar Transistor) and HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 283-288, November 15–19, 2009,
...Abstract Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects linked with hot electron and the failure analysis of these devices are very challenging...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 253-257, November 1–5, 2015,
...Abstract Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 393-397, November 14–18, 2010,
...Abstract Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 146-149, October 31–November 4, 2021,
..., Redondo Beach, CA, USA Abstract The sub-50 nm Indium Arsenide Composite Channel (IACC) High Electron Mobility Transistors (HEMTs) are fabricated on 100 mm Indium Phosphide (InP) substrates. This technology offers the best performance for low-noise and high-frequency, space and military applications...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 20-26, November 14–18, 2010,
... in the semiconductor regions. The extraordinary high sensitivity of our microscope provides THz near-field contrasts from less then 100 mobile electrons in the probed volume. 65 nm process atomic force microscope failure analysis near-field microscopy plasmons semiconductor transistors Quantitative...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 220-226, November 2–6, 2008,
... local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum. aluminum gallium nitrides electrical characterization high electron mobility transistors photoemission spectroscopy...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 358-362, October 28–November 1, 2018,
... down from high process temperatures to room temperature. This additional strain influences the transistor characteristics, and consequently the product performance. The measurement of strain with high spatial resolution requires TEM-based methods. In this paper, convergent beam electron diffraction...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 386-391, November 3–7, 2013,
... describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique. aluminum gallium nitrides electroluminescence analysis failure analysis high-electron-mobility transistors leakage current optical beam induced...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 435-442, November 12–16, 2000,
.... Landesman, B. Depret, A. Fily, J. Nagle and P. Braun, Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy , Appl. Phys. Lett., vol. 72, no. 11, pp. 1338-1340, 1998. 9. D.C. Hall, L. Goldberg and D. Mehuys, Technique for lateral...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 230-233, November 13–17, 2011,
... crystal and OBIRCH techniques are not well adapted. capacitors failure analysis hot spot detection indium gallium arsenides infrared thermography monolithic microwave integrated circuits optical beam induced resistance change pseudomorphic high electron mobility transistors scanning thermal...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 333-335, November 1–5, 2015,
... for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure. Introduction AlGaN/GaN high electron mobility transistor (HEMT) has excellent features for managing large electrical power: i.e., high breakdown voltage, high electron mobility, low on-state resistance, low switching losses...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 349-352, November 5–9, 2017,
... paper reports a study recently performed on a multilayer stack envisioned by the Fraunhofer IAF as a structure for GaN-based high electron mobility transistors[6]. Figure 1 Schematic view of the Attolight Allalin cathodoluminescence-dedicated scanning electron microscope. Experiments A multilayer AlGaN...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 214-220, November 5–9, 2017,
... affect the performance characteristics of CMOS transistors by affecting the mobility µ, threshold voltage Vt and saturation velocity Vsat of carriers, rapid scaling down of process technology has vastly changed the interdependencies of these factors. Primarily two dependencies exist: 1) At high gate...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 432-435, November 6–10, 2005,
..., the SisH forms during the post metallization anneal. This paper will outline the following topics: 1.) The generation of mobile hydrogen atoms and trap charges at the Si-SiO2 interface due to the hot electron phenomenon and its relationship to transistor beta degradation. 2.) A quantitative analysis...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 144-148, November 15–19, 2009,
... of dielectric roughness in the performance of OTFTs has been reported [12-13]. The properties of dielectric strongly dominate the mobility of transistors. Generally speaking, poor quality of organic thin film and high driving voltage may result in considerably violent failures seldom discovered in conventional...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 163-168, November 15–19, 1998,
... the emission process via supplying thermal stimulus is not unreasonable. There are four primary mechanisms in CMOS ICs that produce light emission in this manner: forward and reverse bias diodes, the transistor hot electron effect and conduction through gate oxide. Recombination in leaky pn junctions is also...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 471-481, November 3–7, 2013,
... of electron lifetime, electron mobility and band-gap narriowing in heavily doped p-type silicon , Int. Electron Devices meeting (1986), pp. 24-27. [17] D.D. Tang, et al, Heavy Doping Effects in p-n-p Bipolar Transistors , IEEE Trans.Electron Devices ED-27, 3 (1980), 563-570. [18] W. M. Yee et al, "Laser...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 747-751, November 3–7, 2002,
... channel resistivity and thus its performance [7]. Theoretically, the resistivity of a semiconductor material can be related to temperature as follows nqµ) -1 e (Ef-Ei)/KT T 5/2 (1) where n (electron concentration) and µ (electron mobility) are a function of temperature. It has been previously shown...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 245-249, November 18–22, 1996,
... to temperature exhibited by various sources of current. Carrier mobilities, for example, show a temperature dependence of approximately ii oc T -24 and // ~ T -2-2 [2]. Defects which lead to transistor contention, e.g., a conducting bridge across signal lines, generate current by virtue of "on" devices operating...