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high aspect ratios

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Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 454-459, November 10–14, 2019,
... for very thin sample preparation significantly modifies the thermal system surrounding active circuitry. Here, high aspect ratio trenches are shown to offer a unique method to take advantage of thick silicon (> 100µm) for lateral heat dissipation as well as thin silicon (< 2µm) for minimally...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 343-347, November 2–6, 2003,
... precision. Even so, it has been amazing that SE monitoring works in high aspect ratio holes—reports have been made of high aspect ratio holes near 30:1. To explain why this occurs, therefore, is of interest and, by understanding how it works, we may improve the technique. failure analysis integrated...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 355-361, November 2–6, 2003,
... successful modification of today’s most advanced designs. deposition processes failure analysis focused ion beam integrated circuit editing milling semiconductor device manufacturing silicon Small Via High Aspect Ratio Circuit Edit: Challenges, Techniques and Developments Valery Ray...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 534-537, November 14–18, 2004,
...Abstract Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 658-659, November 14–18, 2004,
... current monitoring, a detailed understanding of the endpoint signal distribution within a high aspect ratio (HAR) via is of great interest. This article presents an alternative model of HAR via milling endpointing mechanism in which a phenomenon of spatial distribution of the endpoint information within...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 85-88, November 18–22, 1996,
...-conductive organic material is trapped inside the hole which increases the fill resistivity. With its planarization and multiple metal levels, advanced IC process technology forces contact to lower level metal to be through high aspect ratio holes. To make a low resistance contact through such a hole...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 380-385, November 5–9, 2017,
...Abstract Abstract For a recent replacement metal gate (RMG) technology using a SOI substrate, residue from the dummy gate formed a defect that affected the RMG formation. In this FINFET technology, the high aspect ratio of the gate makes removing the dummy gate very difficult. Residue is left...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 53-58, October 31–November 4, 2021,
... evolved to meet more demanding specifications. Certain embodiments of these NPNs, however, pose difficulties in failure analysis. Vertical NPN BJTs, with nanometer thick junctions extending several microns in length, are one such example. Although the high aspect ratio dimensions of these devices provide...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 141-145, October 31–November 4, 2021,
...Abstract Abstract This paper evaluates the use of plasma etching for preparing TEM specimens to analyze high aspect ratio 3D NAND integrated circuits. By controlling plasma etching parameters, a relatively high material removal rate could be obtained. Moreover, through the control of etch time...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 227-231, November 10–14, 2019,
..., involving a critical etch step with aspect ratios of ~50:1. These high aspect ratio process steps present both fabrication and metrology challenges where the channel holes can bend, bow, and pinch off throughout the stack. Work presented herein demonstrates the capability of an automated workflow developed...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 338-342, November 2–6, 2003,
... modification processes require the use of primary ion beam currents below 10 pA and Gas Assisted Etching (GAE). At low beam currents, short pixel dwell times and high aspect ratios, the level of available secondary electrons for detection has declined significantly. FIB GAE and deposition requires delivery...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 151-156, November 14–18, 2004,
... FIB Assist, an image and signal enhancement product for the FEI / Micrion platform, for critical FIB endpoint determination. Examples of FIB fabricated probe points with 30 x 30 nm FIB vias and circuit edit applications endpointing on metal 1 with high aspect ratio holes are presented. failure...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 133-140, November 2–6, 2008,
...Abstract Abstract We present an analysis of tungsten vias fabricated by a focused ion beam with regard to the understanding of circuit editing strategies. The growth rate of W is ~10 times faster in high aspect ratio vias than on flat surfaces, and W in vias has 4 at. % more C but only one...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 231-232, November 6–10, 2005,
...Abstract Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 397-401, November 10–14, 2019,
... sensitivity for trace materials, contamination analysis of post hard mask residue, post metal etch residue especially in high aspect ratio structures is also possible. 3D integration contamination analysis fin field effect transistor microbumps physical failure analysis semiconductor packaging...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
...Abstract Abstract This paper presents a method for determining positional variation and offsets in high aspect ratio etches used in the production of 3D NAND devices. The method uses a 3D fiducial as a positional reference in the field-of-view, which not only allows for high precision tracking...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 97-105, November 15–19, 2009,
... “milling acuity” under real-world conditions. A quantitative measuring scheme for evaluating the quality of High Aspect Ratio (HAR) vias is proposed, and an example is shown in which the HAR measuring scheme can be used for process development. failure analysis focused ion beam milling performance...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 70-77, November 6–10, 2005,
... and high aspect ratio (HAR) capability. Complete process definitions, techniques and results are reported. These techniques have proven successful in circuit edit below 90nm, and are expected to meet future technology circuit edit requirements down to 45nm. etching failure analysis focused ion beam...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 20-24, November 10–14, 2019,
...-sized pinhole breakdown sites in a high aspect ratio 3x50 ìm TSV array. Thanks to the wavelength-selective absorption process in silicon, we can extract valuable defect depth localization info from our laser stimulation measurement. After chip deprocessing we inspect and localize the defect site...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 209-214, November 10–14, 2019,
...-NAND device where process induced variation in the high aspect ratio vertical memory channels is measured and to a double stack 3D-NAND architecture, which is comprised of two 32-layer stacks where eccentricity of the pillars was evaluated for layers in both upper and lower stacks. In addition...