1-20 of 822 Search Results for

focused ion beam

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 281-284, November 11–15, 2001,
... metals. failure analysis focused ion beam quadrupole detector secondary ion mass spectrometry Water Vapor Enhancement for Elemental Analysis Using Focused Ion Beam Secondary Ion Mass Spectrometry (FIB-SIMS) T.L. Shofner, F.A. Stevie, and J.M. McKinley Agere Systems, Orlando, FL, USA J...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 113-116, November 14–18, 2010,
... detractor diagnosis could be introduced. electrical testing embedded SRAM failure analysis focused ion beam integrated chip design pattern recognition wafer fabrication Semi-Automated Full Wafer In-line SRAM Failure Analysis By Dual Beam Focused Ion Beam (FIB) Steven B. Herschbein, Hyoung H...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 151-157, November 14–18, 2010,
...Abstract Abstract A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 474-479, November 9–13, 2014,
...). However, the typical sample preparation process flow utilizes a dual beam focused ion beam (FIB) microscope for sample preparation, with the final sample end-pointing monitored using the scanning electron microscope (SEM) column. At the latest technology nodes, defect sizes can be on the order...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 358-361, November 5–9, 2017,
... of the data acquisition from 5nm per step to 2.5nm per step with a 4k image resolution changed the sensitivity of the data by about 4%. However, increasing the number of pixels of each diffraction pattern from 2k to 4k and removing the focused ion beam prepared sample surface damage both showed greater than...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 3-7, November 11–15, 2001,
...Abstract Abstract Focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects post electrical fault isolation. In this highly competitive...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 285-288, November 11–15, 2001,
...Abstract Abstract Since the introduction of copper metalization into mainstream semiconductor processes, new backend debug and failure analysis techniques are needed to deal with the different reaction rate and milling behavior of copper. Focused Ion Beam (FIB) systems have long been a major...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 183-188, November 3–7, 2002,
...Abstract Abstract Focused Ion Beam (FIB) has been widely accepted in circuit modification and debugging of new chips and process technologies [1]. It has the advantages of rapid confirmation of design fixes and reducing the cost and time to build new masks. In this paper, we will describe...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 559-568, November 3–7, 2002,
... frequency. CMOS equivalent circuits flip-chip packages focused ion beam integrated circuit editing microprocessor debug Microwave Frequency Signal Propagation in Backside Focused Ion Beam (FIB) Fabricated Interconnects Jeremy A. Rowlette, Michael DiBattista, Seth Fortuna, Richard H. Livengood...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 338-342, November 2–6, 2003,
...Abstract Abstract Secondary electron signal is widely used in Focused Ion Beam (FIB) systems for imaging and endpointing. In the application of integrated circuit modification, technology has progressed towards smaller dimensions and higher aspect ratios. Therefore, FIB based circuit...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 293-296, November 12–16, 2006,
...Abstract Abstract It is shown that a focused ion beam (FIB) grounding technique can be used to alleviate charge buildup on samples that would otherwise charge in the electron beam to the point where analysis by Auger electron spectroscopy (AES) was limited or impossible. FIB grounding...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 7-13, November 2–6, 2008,
...Abstract Abstract Conventional focused ion beams (FIB) employing liquid metal ion sources (LMIS) are used to create site specific cross-sections for viewing subsurface features and performing 3D metrology on subsurface structure. Emerging applications incorporate novel materials as well...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 128-132, November 2–6, 2008,
... well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification. failure analysis flip-chips focused ion beam microprocessors random access memory wafer manufacturing Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 157-162, November 2–6, 2008,
...Abstract Abstract This work describes how Solid Immersion Lenses (SILs) can be created in bulk silicon using a focused ion beam and a bitmap milling process. The optical properties are in good agreement with the expected results for the achieved lens geometries. An improvement in lateral...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 445-448, November 2–6, 2008,
...Abstract Abstract As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective site identification during...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 21-26, November 15–19, 2009,
... connecting integrated circuit design, device development and failure analysis for shorter development cycles. electrical probing failure analysis focused ion beam integrated circuit editing microelectronic devices silicon Extended Circuit Edit, Analysis and Trimming Capabilities based...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 119-125, November 15–19, 2009,
...Abstract Abstract The topic of this work is the sequential use of Solid Immersion Lenses (SILs), created in bulk silicon in less than 20 minutes of processing time, using a focused ion beam and a bitmap milling process. Fibbed SILs can be removed by polishing, and the silicon back surface...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 389-392, November 14–18, 2010,
...Abstract Abstract Focused Ion Beam has proven to create refractive solid immersion lenses in silicon that can significantly improve the resolution of optical backside analysis tools. The SIL performance in our previous works has been limited though, mostly due to a pure sputtering process...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 31-34, November 13–17, 2011,
...Abstract Abstract For most advanced semiconductor products, Focused Ion Beam (FIB) circuit modification and node access through the backside of the chip is the only viable approach. The high density of interconnect wiring and the presence of C4 solder bumping for chip to module attachment has...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 46-53, November 13–17, 2011,
...Abstract Abstract The theoretical fundamentals of diffractive solid immersion lenses (dSILs) were revised and adapted to a new application: the direct single-step chemistry-assisted creation of binary dSILs in silicon with a focused ion beam (FIB). Current results were able to prove the general...