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finite element model

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Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 561-565, October 28–November 1, 2018,
... the technique experimentally. dielectric films film thickness finite-element modeling quantitative measurement scanning microwave impedance microscopy silicon substrate Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films K...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 189-193, November 14–18, 1999,
... element modeling of the temperature distribution, using ANSYS, and the measured data. bandpass filter cadmium mercury telluride failure analysis finite element modeling infrared bolometers infrared microscope thermal imaging systems thermal properties titanium meander 189 Temperature...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 143-150, November 11–15, 2012,
...Abstract Abstract This paper presents the electrical model of an NMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures and from the results of physical simulation using Finite Element Modeling...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 135-142, November 11–15, 2012,
... are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices. 90 nm process failure analysis finite element...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 423-429, October 31–November 4, 2021,
... are thinned to 50, 10, and 3 μm via CNC milling. Lattice damage, in the form of dislocations, extends about 1 μm below the surface, but is removed by polishing with colloidal SiO2. As shown by finite-element modeling, thinning increases compressive global stress in the Si while solder bumps (in flip-chip...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 449-453, November 6–10, 2016,
.... This study includes analytical and finite element modeling of tip bias dependent depletion-layer geometry and impedance. These are compared to experimental results on reference samples for both doped Si and GaN doped staircases to validate the systematic response of the sMIM-C (capacitive) channel...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 588-593, November 6–10, 2016,
... to the bond wires in the IC package. Bond pull analysis based on simulation and finite element methods also exists but relies on the original model for a bond wire from a CAD design. In this work, we introduce X-ray tomography imaging with 700nm imaging resolution to acquire the 3D geometry details of bond...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 151-159, November 11–15, 2001,
... and a laser-scanning microscope. The amplifier used for amplifying the weak voltage or current variations caused by thermal laser stimulation was shown to be a key factor. The design of such a low noise, high gain and fast voltage amplifier is described. From a 3D finite element ANSYS model of the thermal...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 223-226, November 10–14, 2019,
... and mechanical properties of the materials used especially in 3D integrations like through silicon via (TSV) technology [1]. Through finite element simulation [2] the internal strain profile was modelled and based on these findings we devised a simulation model for a large area chunk lift out, to preserve...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 488-496, November 12–16, 2006,
... collected from each of the parts to be stacked and calculating a compatibility number. Finally, we will review work that is underway in finite elemental modeling. Sample and Chamber Preparation We begin with single package product samples, which may be supplied with or without balls attached. If solder...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 84-90, November 15–19, 2020,
... use Finite Element Analysis (FEA) modeling to determine the impact and magnitude of measurement artifacts that result from the specific chip package type. These computational results enable optimization of the measurements used to take empirical data yielding magnetic field images that are free...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 463-467, November 3–7, 2013,
... that predicts the weakest areas in the glass interposer. In this work we concentrate our effort to predict the localization of the areas that could fail by thermal and thermomechanical analyses using Finite Element (FE) modelling. Finite Element modelling In our work we will develop two distinct approaches...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 190-195, October 31–November 4, 2021,
... preparation and off-axis electron holography. Additional finite element modeling (FEM) will allow the experimental results to be compared to numerical simulations including factors like specimen geometry, FIBinduced damage, stray fields, and charging effect from electron beam interactions. Experimental Sample...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 266-272, November 10–14, 2019,
... of wire bonding for integrated circuit (IC), the mechanical integrity of the IC bond pad structure must be evaluated. The risk of pad damage during bonding and reliability degradation is high when the mechanical strength of the pad structure is weak. Finite-element- model (FEM) simulation results...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 472-474, November 6–10, 2005,
... Element model validation, shock response matching between systems and representative certification vehicles, die and package assembly process evaluations and failure analysis. This paper will briefly review the methodology of using a 2 dimensional high speed camera and illustrate how it is used...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 361-370, November 3–7, 2002,
.... Schubert et al. [8] studied the effect of particle settling, size of voids, degree of solder mask misregistration, fillet geometry and igure 1. Finite element model of a) 144 I/0 CSP mounted on FR4 board subjected to four-point bend, b) onstructional details of the package. Solder joints were modeled...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 358-362, October 28–November 1, 2018,
.... convergent beam electron diffraction finite element modeling metal oxide semiconductor field effect transistors sample preparation strain measurement strain simulation through silicon via transmission electron microscopy Correction of stress release during sample preparation for TEM CBED...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 1-5, November 12–16, 2006,
... to 1.0 µm. Numerical simulations were also done using a finite element model and those results are shown by the solid line on Fig. 9. The agreement between the measurements and the simulation validates the ability of our tool to perform quantitative capacitance measurements on these small test keys...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 209-211, November 6–10, 2005,
... industry, new materials challenges have been posed by the conversion to copper traces, low dielectric constant insulating layers and Pb- free solders. Rapid integration of these new materials requires accurate finite element modeling of material behavior, which depends on accurate thin film mechanical data...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 130-133, November 4–8, 2007,
... Procedure for Stacked Chip Scale Package, Intel Internal Document, 2001. [2] D. Balacano and L. De La Rama, Power ICCS Package FA Reports, Intel Internal Document, 2005. [3] J. Felde, 256L/256L/64P/64P Finite Element Model for Package Stress, Intel Internal Document, 2005. [4] D. Hull, Fractography...