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finger deprocessing

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 269-273, October 31–November 4, 2021,
...Abstract Abstract Planar deprocessing is a vital failure analysis technique for semiconductor devices. The basic concept is to expose an area of interest (AOI) by removing unnecessary material while maintaining planarity and surface evenness. Finger deprocessing is a widely used material...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 550-555, November 5–9, 2017,
.... Nedeau, Lucile C. Teague Sheridan, C.K. Oh Globalfoundries Inc, Malta, NY, US-12020 E-mail: HueiHao.YAP@globalfoundries.com, Tel: +1-(518)3051747 Introduction Top down finger deprocessing is essential in copper metal technology for semiconductor Failure Analysis (FA) reverse engineering. For top down...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 502-507, November 9–13, 2014,
... Stimulation (TLS) helped first to identify the impacted device and to localize defects; direct electrical measurements using nanoprobing Atomic Force Probe (AFP) determined the defective NMOS pattern fingers. Then, physical analyses with different techniques were used including physical deprocessing...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 230-233, November 1–5, 2015,
..., for it to be applied to NVM, it is not trivial to develop a deprocessing procedure to achieve planar surface throughout the array, as most NVM arrays are very large, up to a few millimeters across. Within the array, the control gate (poly line) and active areas in a column are electrically continuous. Planar...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 362-369, November 15–19, 2020,
... node advancement. Direct TEM or pinhole analysis at the defect site is becoming more challenging. For PC with a more complex structure such as multiple PC fingers transistor (Figure 1(b the challenge often lies in the identification of which finger and where the breakdown is occurring. Passive voltage...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 290-296, November 14–18, 2010,
... is removal of the sealing cap from the MEMS device without any impact to the moveable sensing elements. A novel non-destructive technique has been successfully developed using KOH wet chemical etching followed by application of ex-situ hand sticking to deprocess the sealing cap from an accelerometer device...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 214-218, October 28–November 1, 2018,
...Abstract Abstract The ability to expose a huge kerf/PCM (Process Control Monitor) test structure at the same level is limited from top down finger polishing. Also, in Scanning Electron Microscopy (SEM) the electron beam (e-beam) shift for electron beam absorbed current (EBAC) analysis...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 153-162, November 12–16, 2006,
... needles (T-4-10). Figure 2 shows a 0.25um SRAM array that has been deprocessed to the top of Via 2. The bit lines at Metal 3 have been polished off to isolate the failing bit from the other bits in the array and to allow for the AFP to probe the bit line vias and the VDD and VSS vias. Because the AFP has...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 412-416, November 3–7, 2013,
... to several days to perform layer by layer deprocessing with mechanical polishing and inspection to reach the transistor level. This paper will present a simple and quick polishing technique that will remove the entire metallization stack above metal 1 for a 55nm technology device which results...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 173-176, November 3–7, 2002,
... that captured the image of the fusing defect (Figure 9) providing a map for subsequent physical analysis.. A detailed SEM study along with an EDS analysis were completed after deprocessing the faulty sites. SEM imaging revealed many whisker like formations emanating from the emitter finger and laying across...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 86-90, November 3–7, 2013,
... and G-D leakage failures, however precise fault isolation becomes more challenging in FET arrays because there are multiple power FETs connected in parallel, each power FET with numerous gate fingers. A gate-to-source leakage path for example, can exist on any one of the many gate fingers on any one...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 169-177, November 6–10, 2005,
... identified by MCI in input transistors. Subsequent deprocessing revealed that the defects were located under a broad sheet of aluminum metallization which blocked optical detection, and rendered detection by thermal emission difficult. aluminum metallization electrical test fault isolation...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 254-260, November 15–19, 2009,
... to customer. There are two major findings in this paper. First major finding is the impact of the plasma etching, during removal of PO and ILD levels in the initial PFA deprocessing, on the initial read data of the fail bit. The programmed bit is unintentionally erased during plasma etching. Second major...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 30-35, November 2–6, 2008,
... key data could be lost. This was the case of the unit shown in figure 7. It belonged to a group of units that failed with electric shorts and recovered during failure analysis. Chemical decapsulation and laser deprocessing were used without success in keeping the failure mode intact. Figure 7. 2D x...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 416-421, November 6–10, 2005,
... the integrated seal in order to permit failure analysis. Mechanical methods were attempted first, but these resulted in severe damage to the sensing element. Chemical deprocessing was considered, but eventually abandoned because there seemed to be no way to protect the sensing elements from the wet etchants...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 482-486, November 14–18, 2004,
... when we switched from Iridium coated tips to Tungsten wire type tips. Fig 1. Scanning capacitance image of a 0.18 micron technology node sample deprocessed to the level of polysilicon. The contacts going to n type diffusions are in white, those going to p type are in brown. The polysilicon fingers can...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 219-225, November 15–19, 2020,
... was solved. FA techniques and experiment results The first experiment was FIB-CE to duplicate customer measurement, as requested by the customer. The sample was deprocessed to Via3 (V3) layer and FIB cutting the metal lines to isolate the 12V PMOS. Micro-probe pads were laid and connected to the isolated...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 267-273, November 15–19, 2020,
... that caused the Gate leakage, VC confirmed the compromised Gate finger, and then RCI to locate the Gate oxide rupture of the compromised Gate. Case 1 Backside Photo Emission Microscopy (PEM) fault isolation generated three unique PEM sites when compared to a reference device (see Figure 1 - reference device...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 457-464, November 14–18, 2010,
... the wire bond profile is also a challenge for LFCSP because traditional methods of decapsulating the plastic package do not always preserve the integrity of the lead frame. LFCSP do not have the backside support for the lead frame area, thus the lead fingers may get distorted if decapsulated as is. Results...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 228-231, November 11–15, 2012,
... test behavior. However, the choice of the physical analysis was not obvious: step by step deprocessing (risk of missing via anomaly) or cross section (risk of missing transistor anomaly in the flip flop block). Finally, we decided to apply the EMMI technique with focus on the suspected clksys_gen block...