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Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 109-116, November 5–9, 2017,
... Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes...
Proceedings Papers

ISTFA2022, ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis, 135-143, October 30–November 3, 2022,
... many studies have been undertaken to understand interaction between laser and planar devices, three-dimensional devices such as FinFETs have interesting physiologies that have not been fully explored. In this work, we study the interaction of polarized light with the n-type metal oxide semiconductor...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 160-163, November 10–14, 2019,
.... Moreover, photons are emitted with lower probability and lesser energies for smaller technology nodes such as the FinFET. In this paper, we will discuss executing scan tests in manners that can be used to bring out emission which did not show up in conventional test loops. automatic test pattern...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 197-203, November 10–14, 2019,
... Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling electrical...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 308-312, November 10–14, 2019,
... energy dispersive X-ray spectroscopy scanning electron microscopy Super XHR Cross-Sectional SEM Imaging & EDS Analysis: A Systematic Method for High-Fidelity Microstructure Characterization of Dense SRAM FinFET Zdenek Kral, Jake Jensen, Lisa McGill, Trevan Landin and Roger Alvis Thermo Fisher...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 313-316, November 10–14, 2019,
... Abstract In this paper, the stacking fault defects in FinFETs are described as the root cause of the PLL failure. Failure analysis approaches such as photon emission microscopy and nano probing were applied to pinpoint the exact stacking fault location in even transistor level and High...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 317-322, November 10–14, 2019,
... Abstract This paper describes an electrical and physical failure analysis methodology leading to a unique defect called residual EG oxide (shortened to REGO); which manifested in 14nm SOI high performance FinFET technology. Theoretically a REGO defect can be present anywhere and on any multiple...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 329-335, November 10–14, 2019,
... Abstract Nanoprobing systems have evolved to meet the challenges from recent innovations in the semiconductor manufacturing process. This is demonstrated through an exhibition of standard SRAM measurements on TSMC 7 nm FinFET technology. SEM based nanoprober is shown to meet or exceed...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 372-376, November 10–14, 2019,
... Abstract This paper demonstrates a two-pin Electron Beam Induced Current (EBIC) isolation technique to isolate the defective Fin with gate oxide damage in advanced Fin Field Effect Transistor (FinFET) devices. The basic principle of this twopin configuration is similar to two-point Electron...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 397-401, November 10–14, 2019,
... also be applied in the front end metrology of new gate materials, 3D FinFET structures within test structures in patterned wafers. Characterization of sub nanoscopic changes (sensitivity of sub-angstrom) in film and dopants deposited in 3D structures will also be shown. With its high sensitivity...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 454-459, November 10–14, 2019,
... wavelength Submicron thinning of finFET devices with high power density observed in 10/7nm process nodes using high aspect ratio trenches Nathan Bakken, Vladimir Vlasyuk, Michael Beal, Ilya Artishuk Intel Corporation, Folsom, California nathan.j.bakken@intel.com, vladimir.v.vlasyuk@intel.com Robert Chivas...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 484-489, November 10–14, 2019,
... to three dimensional FinFET devices has resulted in many challenges with regard to device analysis. This is especially true when it is necessary to perform detailed dopant analysis on a specific device; the device may be comprised of a single or multiple fins that have been called out specifically through...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 7-18, November 6–10, 2016,
... Abstract Using a laser to purposely damage (or zap) a static random-access memory (SRAM) bitcell for bitmap validation purposes is a well-established technique. However, the absence of visible damage in FinFET SRAM cells, amongst other things, makes precision zapping in these devices more...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 19-26, November 6–10, 2016,
... Abstract The visible approach of optical Contactless Fault Isolation (VIS-CFI) serves the perspective of application in FinFET technologies of 10 nm nodes and smaller. A solid immersion lens (SIL) is mandatory to obtain a proper resolution. A VISCFI setup with SIL requires a global polishing...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 97-101, November 6–10, 2016,
... to localize the fail location within such devices in both the 22 nm and 14 nm technology nodes. 14 nm process 22 nm process electron beam absorbed current electron beam induced current failure analysis FinFET devices nanoelectronic devices sample preparation scanning electron microscope...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 327-329, November 9–13, 2014,
... Abstract The FinFET has been introduced in the last decade to provide better transistor performance as the device size shrinks. The performance of FinFET is highly sensitive to the size and shape of the fin, which needs to be optimized with tighter control. Manual measurement of nano-scale...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 469-473, November 9–13, 2014,
... for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET). CMOS devices failure analysis fin-field effect transistors focused ion beam milling sample preparation transmission electron microscope Investigation...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 196-200, November 5–9, 2017,
... achieved using time resolved pulsed laser and its comparison with the same using a CW laser is shown on 14nm FinFET technology. 14 nm process bridging defects dynamic laser stimulation electro-optical modulator fault isolation FinFET microprocessors pulsed lasers silicon time resolved laser...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 214-220, November 5–9, 2017,
... FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 380-385, November 5–9, 2017,
... Abstract For a recent replacement metal gate (RMG) technology using a SOI substrate, residue from the dummy gate formed a defect that affected the RMG formation. In this FINFET technology, the high aspect ratio of the gate makes removing the dummy gate very difficult. Residue is left behind...