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Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 109-116, November 5–9, 2017,
...Abstract Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 141-145, November 13–17, 2011,
...Abstract Abstract For 22nm technology node and beyond, fully depleted devices such as FinFET and ETSOI are leading candidates. Certain critical dimensions of such devices are well below 10nm, and only transmission electron microscopy (TEM) has the resolution to provide measurement with sub...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 160-163, November 10–14, 2019,
... challenging. Moreover, photons are emitted with lower probability and lesser energies for smaller technology nodes such as the FinFET. In this paper, we will discuss executing scan tests in manners that can be used to bring out emission which did not show up in conventional test loops. automatic test...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 197-203, November 10–14, 2019,
...Abstract Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 308-312, November 10–14, 2019,
... energy dispersive X-ray spectroscopy scanning electron microscopy Super XHR Cross-Sectional SEM Imaging & EDS Analysis: A Systematic Method for High-Fidelity Microstructure Characterization of Dense SRAM FinFET Zdenek Kral, Jake Jensen, Lisa McGill, Trevan Landin and Roger Alvis Thermo Fisher...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 313-316, November 10–14, 2019,
...Abstract Abstract In this paper, the stacking fault defects in FinFETs are described as the root cause of the PLL failure. Failure analysis approaches such as photon emission microscopy and nano probing were applied to pinpoint the exact stacking fault location in even transistor level and High...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 317-322, November 10–14, 2019,
...Abstract Abstract This paper describes an electrical and physical failure analysis methodology leading to a unique defect called residual EG oxide (shortened to REGO); which manifested in 14nm SOI high performance FinFET technology. Theoretically a REGO defect can be present anywhere and on any...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 329-335, November 10–14, 2019,
...Abstract Abstract Nanoprobing systems have evolved to meet the challenges from recent innovations in the semiconductor manufacturing process. This is demonstrated through an exhibition of standard SRAM measurements on TSMC 7 nm FinFET technology. SEM based nanoprober is shown to meet or exceed...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 372-376, November 10–14, 2019,
...Abstract Abstract This paper demonstrates a two-pin Electron Beam Induced Current (EBIC) isolation technique to isolate the defective Fin with gate oxide damage in advanced Fin Field Effect Transistor (FinFET) devices. The basic principle of this twopin configuration is similar to two-point...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 397-401, November 10–14, 2019,
... technique can also be applied in the front end metrology of new gate materials, 3D FinFET structures within test structures in patterned wafers. Characterization of sub nanoscopic changes (sensitivity of sub-angstrom) in film and dopants deposited in 3D structures will also be shown. With its high...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 454-459, November 10–14, 2019,
... sample preparation silicon bandgap wavelength Submicron thinning of finFET devices with high power density observed in 10/7nm process nodes using high aspect ratio trenches Nathan Bakken, Vladimir Vlasyuk, Michael Beal, Ilya Artishuk Intel Corporation, Folsom, California nathan.j.bakken@intel.com...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 484-489, November 10–14, 2019,
... transition to three dimensional FinFET devices has resulted in many challenges with regard to device analysis. This is especially true when it is necessary to perform detailed dopant analysis on a specific device; the device may be comprised of a single or multiple fins that have been called out specifically...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 327-329, November 9–13, 2014,
...Abstract Abstract The FinFET has been introduced in the last decade to provide better transistor performance as the device size shrinks. The performance of FinFET is highly sensitive to the size and shape of the fin, which needs to be optimized with tighter control. Manual measurement of nano...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 469-473, November 9–13, 2014,
... materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET). CMOS devices failure analysis fin-field effect transistors focused ion beam milling sample preparation transmission electron microscope...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 120-123, November 1–5, 2015,
...Abstract Abstract As semiconductor device scaling continues to reduce the structure size, device geometries are also changing to three dimensional structures such as finFETs, and the materials which compose the devices are also evolving to obtain additional device performance gains...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 241-244, November 1–5, 2015,
... laser source in order to induce localized heat. On the other hand, LADA uses 1064nm wavelength laser source to generate photo carriers. But for the FinFET the effect of laser stimulation is not clear yet. This paper introduces the effect of laser stimulation on FinFET transistors based on wavelength...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 388-400, November 1–5, 2015,
...Abstract Abstract The result of applying normal xenon ion beam milling combined with patented DX chemistry to delayer state-of-theart commercial-grade 14nm finFETs has been demonstrated in a Helios Plasma FIB DualBeam™. AFM, Conductive-AFM and nano-probing with the Hyperion Atomic Force...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 305-310, November 15–19, 2020,
... of the accelerated ions to preserve the functionality of the active diffusion of the FinFET structure. Furthermore, the sputter yield is lowered by ~50% which allows for more reaction time once the STI is exposed. Such workflow eliminates the need to search for a dummy area to expose as fiducial, and the ROE can...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 38-41, November 15–19, 2020,
...Abstract Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 370-374, November 15–19, 2020,
..., and rigorous KOH etch. Using this technique, transistor-level damage was revealed on advanced 7nm FinFET devices with flip-chip packaging. chemical etching deprocessing die-level defects electrostatic discharge damage fault localization finFET devices flip-chip packaging parallel lapping solid...