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epitaxial films

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 211-216, October 31–November 4, 2021,
... the mapping routine can be optimized to detect extended crystalline defects in III/V layers, selectively grown on shallow trench isolation patterned Si wafers. III/V layer crystalline defects electron channeling contrast imaging epitaxial films nano-ridge structure ISTFA 2021: Proceedings from...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 189-195, November 9–13, 2014,
... of conductive AFM to image and characterize electrical defects in thin films. As the AFM is a non-destructive technique, the defects may be re-located by complimentary reference metrology techniques. Once the capability of defect detection and characterization of AFM is demonstrated with respect...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 141-145, November 13–17, 2011,
... direction. In addition, conventional doping techniques are not capable of forming uniform junctions on the three dimensional fin structures. The epitaxial films were used for conformal doping of the devices, reducing the resistance and improving the performance of the device significantly [5]. TEM...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 337-346, November 11–15, 2012,
.... Van der Merwe, in: M.H. Francombe, H. Sato (Eds Single Crystal Films, Pergamon, Oxford, 1964, pp. 139-150; [10] J.W. Matthews, Defects associated with the accommodation of misfit between crystals, J. Vac. Sci. Technol. 12 (1975) 126-133; [11] J.W. Matthews, A.E. Blakeslee, Defects in Epitaxial...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 185-188, October 27–31, 1997,
... International Symposium for Testing and Failure Analysis October 27 October 31, 1997, Santa Clara, California, USA DOI: 10.31399/asm.cp.istfa1997p0185 microsectioned using the unencapsulated technique that employs either a glass wheel or Mylar film polish . In the rest of this section the photoemission...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 151-157, November 14–18, 2010,
... for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 416-421, November 6–10, 2005,
... accurate and cost effective accelerometers while remaining one of the leading suppliers of accelerometers in the market, Freescale began developing accelerometers using epitaxially grown silicon on top of an oxide. Using this technique enables one to increase the aspect ratio of the accelerometer, giving...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 157-161, November 15–19, 2009,
...Abstract Abstract The carrier collection properties of polycrystalline Si (poly-Si) thin film solar cells on glass with interdigitated mesa structure have been locally analysed with Infrared Light Beam Induced Current (IR-LBIC) and compared to LBIC measurements using visible light. The low...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 203-205, October 31–November 4, 2021,
... Modern devices impose strict limitations on crystal quality. Crystal defects can lead to various negative effects, such as charge mobility degradation, charge lifetime reduction, strain relaxation and band structure changes. With the increased use of epitaxial growth, monitoring crystal defectivity...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 279-288, November 12–16, 2006,
... manufactured on a 4H-SiC 4º-off n-type substrate (ND 10 18cm-3), on which an epitaxial layer (ND 1016cm-3 nitrogen) has been deposited. As shown in Fig. 3, those steps have been followed by the implantation at 320 keV of highly-doped aluminium p+-wells (NA 1019cm-3) with a fluence of 2.8 × 1014cm-2...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 436-440, October 31–November 4, 2021,
...). The sample used is composed of two doped epitaxially grown pieces welded together. The next step is to quantify the dielectric value of insulating films (k-value). Repeatability of Quantification As reported here, the resolution of sMIM measurements is more than adequate for all ranges of dopant levels...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 419-424, November 11–15, 2001,
... annealed samples the grains were columnar in nature (Fig. 11) and extended through a whole film thickness as compared to the grain structure in the RTA prepared diodes (Fig. 12) Fig. 11 A fragment of the PtSi Schottky contact in a low leakage current Schottky diode prepared by furnace annealing. 422 Fig...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 211-213, October 27–31, 1997,
... metallurgies are achieved through careful control of the specific chemistry occurring in the laser focus. The most commonly applied deposition reactions are based on organometallic pyrolysis, run at several Torr vapor pressure. The surface chemistry is very similar to that used to produce high purity epitaxial...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 252-255, October 28–November 1, 2018,
... annular dark field (HAADF) plan view images at (a) low magnification and (b) high resolution, of a ZnO:LaSrMnO3 composite thin film grown epitaxially on SrTiO3 substrate by pulsed laser deposition prepared via the plan view specimen preparation method described above. The HAADF STEM work was performed...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 24-25, November 13–17, 2011,
... of possible "fly-back" defect in scanning mode for HAADF-STEM imaging. HAADF-STEM GPA on biaxial stress condition Fig. 2 shows GPA strain analyses of an HAADF-STEM image of a strained Si82Ge18 alloy film on Si specimen. The scan was aligned parallel to a principle strain in the specimen, and GPA analysis...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 44-48, October 31–November 4, 2021,
... was not on the surface itself but rather it was buried deep in the device at the beginning of the epitaxial grown layer. The disturbance in the crystal growth proceeds in a parabolic shape to the surface leading to the bulge that was observed as a black dot on the surface. The question was then, what caused...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 93-96, November 4–8, 2007,
... effSi Si effa effa a ff 22 0 + = , where f and fa Si are hole and silicon matrix volume fractions respectively. Results Test measurements on 62 sites of a PICS wafer Nanometrics application filmZ software can also display the film thickness cartography (Fig. 3). Besides the expected almost...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 158-162, November 14–18, 2010,
...Abstract Abstract The temperature dependence of photocurrent of polycrystalline Si (poly-Si) thin-film solar cells on glass with interdigitated mesa structure has been locally investigated using Infrared Light Beam Induced Current (IR-LBIC) in the temperature range of -25 to +70 °C...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 344-349, November 6–10, 2005,
... by the red lines on the cross sectional profile of the sample, shown in fig. 2 above. The top epitaxial layers and the entire thickness of the dielectrics between the 345 gate and ohmic metals are contained within the PV foil to ensure that the short is found (while typically distinguishable electrically...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 324-329, October 28–November 1, 2018,
.... 012129, 2012. [21] M. Kneiß, M. Jenderka, K. Brachwitz, M. Lorenz, and M. Grundmann, "Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films," Applied Physics Letters, vol. 105, no. 6, p. 062103, 2014. [22] M. Pollak, "On dispersive transport by hopping...