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embedded static random-access memory

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Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 113-116, November 14–18, 2010,
... of static random access memory (SRAM) electrical testing. The embedded memory blocks on some processors are fully configured and probe pad testable as early as the forth metal level. Using a unique navigation technique that combines electrically sorted SRAM bit map data with CAD coordinate information...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 202-208, November 15–19, 2020,
... Interface (SPI) embedded on a 130 nm static random access memory (SRAM) chip is targeted for recovering the full design stack-up. This process leverages state-of-the-art techniques for high precision material processing and image acquisition to optimize and ensure the highest accuracy in the feature...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 320-323, October 31–November 4, 2021,
...Abstract Abstract This paper explains how embedded assist and timing control techniques are being used to improve soft defect screening in nanoscale static random access memory (SRAM). The electrical stress test method is evaluated on advanced FinFET devices. As test results show, resistive...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 80-83, October 31–November 4, 2021,
...Abstract Abstract Static random access memory (SRAM) can occupy up to 90% of the die surface in a microprocessor and is often laid out with even more aggressive design rules than logic circuitry, which makes it more prone to manufacturing defects and more sensitive to process variations...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 179-181, November 10–14, 2019,
...Abstract Abstract Static Random-Access Memory (SRAM) failure analysis (FA) is important during chip-level reliability evaluation and yield improvement. Single-bit, paired-bit, and quad-bit failures—whose defect should be at the failing bit-cell locations—can be directly sent for Physical...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 316-319, October 31–November 4, 2021,
... Random Access Memory (SRAM) has long been used for a new technology development vehicle because it is sensitive to process defects due to its high density and minimum feature size. In addition, failure location can be accurately predicted because of the highly structured architecture. Thus, fast...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 266-271, October 28–November 1, 2018,
...Abstract Abstract This paper compares the three major semi-invasive optical approaches, Photon Emission (PE), Thermal Laser Stimulation (TLS) and Electro-Optical Frequency Mapping (EOFM) for contactless static random access memory (SRAM) content read-out on a commercial microcontroller...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 154-162, October 31–November 4, 2021,
...Abstract Abstract The use of optical techniques for attacking integrated circuits (ICs) is increasingly being reported, particularly the nefarious extraction data from embedded SRAM. Such attacks can provide access to highly sensitive information such as encryption keys and bypass various...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 498-505, November 14–18, 2004,
... accesses to all the rows is looped dynamically. Its emission intensity dropped when the driver is held static while driving logic 0 on the failing wordline, but disappeared altogether when the driver is driving logic 1. This observation signified that the emitting driver was not failing. Rather...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 365-369, November 9–13, 2014,
... in the memory circuitry such as Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), Read only memory (ROM) and Flash memory etc. This methodology has the advantage of narrowing the failure analysis region down to single bit cell area. Other mode of memory failure including multi-bit failure...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 177-183, November 2–6, 2003,
... a SRAM failure analysis strategy will be presented independent on layout and technology. emission microscopy failure analysis failure localization integrated circuits liquid crystals static random-access memory SRAM Failure Analysis Strategy P. Egger, C. Burmer Infineon Technologies, Munich...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 539-542, November 3–7, 2002,
... of logic simulations, the root cause of the failure was clear once the failing gate was known. device under test dynamic random-access memory emission microscopy failure analysis large-scale integration picosecond imaging circuit analysis Pseudo-dynamic fault isolation technique using...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 378-383, November 2–6, 2003,
... unit) No No Bin 2 (-50 MHz) Yes Few Bin 3 (-100 MHz) Yes Multiple 2) The silicon dislocations observed were prevalent in the SRAM (Static Random Access Memory) Sense Amp circuitry. 3) Few or no silicon dislocations were observed at the substrate of the good units. When performing LIVA analysis...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 293-296, November 14–18, 1999,
... and residual aluminum (oxide) left in the fuse cavity after the laser blows. Introduction As part of the qualification of a plastic-packaged fast static random-access memory (SRAM) with aluminum fuses, several hundred units were subjected to autoclave stress. Autoclave stress is an environmental test...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 14-19, November 4–8, 2007,
... transistor characteristics. This helps to generate reliable fault hypotheses and allows the wafer fab to react. Analysis Flow and Set-up The investigated structures are standard single port static random access memories (SRAM) manufactured using a 130 nm technology (see figure 1). The analysis was performed...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 259-265, November 3–7, 2002,
..., photoemission microscope and LCA are reviewed utilizing these SRAM column failures. failure analysis fault isolation life cycle assessment optical beam induced resistance change photoemission microscope static random-access memory Application of Various Fault Localization Techniques to Different...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 1-5, November 1–5, 2015,
... and is unable to pinpoint to the defective cell. This is expected because any defective memory bit fails in this array will give rise to the same electrical failure signature on test, typical of BIST. Hence, the precision of EeLADA is electrically-limited. A direct access memory test methodology is the only way...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 232-241, November 2–6, 2003,
... the usability of our analysis framework using real BFM test data from a large, modern SRAM test vehicle. deformations IC manufacturing static random-access memory Analysis of IC Manufacturing Process Deformations: An Automated Approach Using SRAM Bit Fail Maps T. Zanon, M. Ferdman, K. Komeyli*, and W...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 14-20, November 1–5, 2015,
.... Although the response varies for different memory arrays, the diagnosis resolution is array level at best. We have experienced worse cases where the test response is similar for all embedded memories within an IP block. In contrary, should memory cells be tested using direct access test method, in other...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 273-278, November 15–19, 1998,
... failure analysis focused ion beam milling metallization stack static random-access memory Investigation of High Via Resistance of a 0.25pm CMOS ASIC Technology Abstract H. Sur, S. Bothra, R. Lei, J. Hahn VLSI Technology, Inc. San Jose, California H. Brugge VLSI Technology, Inc. San Antonio, Texas...