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direct bitcell access

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Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 322-324, November 15–19, 2020,
... an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 80-83, October 31–November 4, 2021,
... method that combines design for test (DFT) features, direct bitcell access (DBA), and nondestructive fault isolation techniques. With examples and case studies, it is shown how the approach makes use of electrical failure analysis data to greatly reduce the cycle time of root cause identification...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 316-319, October 31–November 4, 2021,
... for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 207-211, November 13–17, 2011,
...Abstract Abstract This paper outlines the analysis of a flash single bit failure caused by bitcell degradation over write/erase cycling. With no physical anomaly present at the failing single bit, Atomic Force Probing (AFP) characterization was utilized in conjunction with thermal response...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 154-162, October 31–November 4, 2021,
... to silicon area optimization and sharing of access of the different signal lines (e.g. power signals). In the bitcell pattern, the larger area most likely matches with the PMOS signal which is significantly Figure 4: Logic state image generated from OBIRCh images. Greyscale indicates the difference...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 7-18, November 6–10, 2016,
...Abstract Abstract Using a laser to purposely damage (or zap) a static random-access memory (SRAM) bitcell for bitmap validation purposes is a well-established technique. However, the absence of visible damage in FinFET SRAM cells, amongst other things, makes precision zapping in these devices...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 66-70, November 14–18, 2010,
...Abstract Abstract Threshold voltage (Vt) shift was measured, using atomic force probing (AFP) technique, in the pullup PFETs of high density SRAM bitcell arrays in 90nm CMOS bulk technology. This shift caused catastrophic yield loss. The direct measurements of dopant distribution both in plan...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 105-110, November 3–7, 2013,
...Abstract Abstract Failure analysis for Static Random Access Memory (SRAM) is the major activity in any microelectronic failure analysis lab. Originating from SRAM array structure, SRAM failure can be simple as single bit, paired bit or quad bit failures, whose defect is located at the failure...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 112-117, November 11–15, 2012,
... to obtain other important information such as cell stability as well as the Static Noise Margin (SNM4] The SNM is an important metric in determining the stability of 6T SRAM designs to noise and their dependency on other factors such as supply voltage. The use of 8 probes allows a direct method to study...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 86-98, November 10–14, 2019,
... these photons are emitted in and near the latchup region, PEM (Photon-Emission Microscopy) can be used to identify these regions [6-8]. Techniques utilizing pseudo or direct time resolved imaging to track the latchup progression and better localize the trigger site have been reported [7-9]. Since latchup can...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 16-20, November 15–19, 2009,
... less amount of data with which fast failure analysis and variability evaluation are prohibitive. Direct bit line access [3] and direct bit transistor access [4] allows each bit or each bit transistor in a functional SRAM to be characterized; however, direct measurement of defect induced bit leakages...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 401-408, November 1–5, 2015,
... of Capacitance-Voltage accuracy. Currently, 100aF (1 10-16F) and below have been achieved in SRAM (Static Random Access Memory) NMOS (n doped Metal Oxide Semiconductor) devices (see Figure 2). Keysight provides instruments for the measurement of capacitance, including model E4980A LCR meter and the latest model...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 212-217, November 13–17, 2011,
... analysis had led to an exact model that was able to explain the failure mechanism. This model pinpointed a PFET extension implant blockage. Subsequent silicon etch analysis directed by the model prediction brought out the non visual defect (NVD). Inline inspection at the extension implant photo step...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 184-190, November 2–6, 2003,
... for next generation processes. Introduction With the advent of multi metal layer processes, flip chip packaging and the continuous shrinkage of critical geometries, the ability to access internal nodes during probing and silicon microsurgery has become increasingly difficult. Therefore, in recent years...