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diffusion

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Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 64-69, November 6–10, 2005,
...Abstract Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 233-238, November 18–22, 1996,
... extension. charge diffusion electron beam induced current Kernel defects laser diodes Proceedings of the 22nd International Symposium for Testing and Failure Analysis, 18 - 22 November 1996, Los Angeles, California Charge Diffusion and Reciprocity Theorems: A Direct Approach to EBIC of Ridge...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 290-292, November 11–15, 2012,
... diffusion from substrate was so high that it affects the doping concentration of channel. diffusion failure analysis gate oxides phosphorus power MOSFET secondary ion mass spectrometry threshold voltage SIMS Analysis for the Threshold Voltage Shift of Power MOS Caused by Abnormal Dopant...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 391-396, November 6–10, 2016,
...Abstract Abstract Shrinking transistor geometries present ongoing challenges for backside FIB circuit edit operations. The available space to gain access to critical signal lines has diminished to the order of hundreds of nanometers. Several previous works have shown that the diffusion...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 31-37, October 27–31, 1997,
... electrical nodes revealed that the leakage occurred through a parasitic field transistor (i.e. between two P+ diffusion islands gated by a polysilicon runner). Probing of test structures with similar layout features revealed that the diffusion isolation between the P+ diffusions was marginal, resulting...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 482-486, November 14–18, 2004,
... preliminary data on anomalous contrast observed in contacts at both 0.13 micron node and 90 nm node products. It also demonstrates the ability to distinguish between contacts going to a n-type diffusion, p-type diffusion, and transistor gate. The article also presents a simple model for the CV curves...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 40-43, October 31–November 4, 2021,
... for chemical, structural, and morphological analysis and electrical device performance testing. The contaminated wafer was also annealed at high temperature, trying to drive Cu diffusion further into the Si substrate. TEM analysis revealed that the Cu interacted with Si to form a stable η-Cu 3 Si intermetallic...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 513-522, November 3–7, 2002,
...Abstract Abstract Hot disk metrology represents a transient plane source measurement technique for characterizing thermal conductivity and thermal diffusivity of a wide range of materials. In this technique, the hot disk sensor serves as a heat source and a thermometer. During the measurement...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 157-161, November 14–18, 2004,
... detection of the global FIB trench in silicon, and contact resistivity of FIB deposited metal interconnect on diffusion, are presented. Investigated endpoint detection processes are FIB image contrast of the wells and of STI (shallow trench isolation). The contact to diffusion is in the range of 2-5 x 10-7...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 163-168, November 6–10, 2005,
...Abstract Abstract We propose visualizing techniques of a diffusion layer using an electron beam induced current (EBIC) for a site-specific cross-section formed by focused ion beam (FIB) treatment. Moreover, we present a three-dimensional (3-D) EBIC technique using a double beam (FIB & EB...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 413-415, November 6–10, 2005,
... diffusion through the bulk intermetal ULK were attributed to the TDDB degradation for the H2 ash.The interfacial Cu-ion-migration was the only dominated failure mode for the N2/H2 ash. The nitrogen species in the N2/H2 plasma proved to be capable of forming a nitrided protection layer on the surface...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 345-350, November 18–22, 1996,
... was calculated based on Speakman model, and destruction mode was classified by Wunsch-Bell plot. As a result of Wunsch-Bell plot, electric discharge which occur at low resistance, for example machine model (MM: C ∙ R = 200pF ∙ 0Ω), resulted in adiabatic destruction that does not involve thermal diffusion...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 215-217, November 9–13, 2014,
... mechanism due to Cu diffusion caused by poor Ta barrier metal. Based on our failure analysis results, the NSOP issue was not due to the assembly process, but due to the wafer fabrication. The failure mechanism might be that the barrier metal Ta was with pinholes, which caused Cu diffused out to the top Al...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 33-39, November 3–7, 2013,
... > 1keV. Due to the porosity of these ULK dielectric films, they are especially susceptible to gallium ion implantation. It has been reported elsewhere that suppressing copper diffusion at the copper land/cap interface can be achieved by depositing a thin layer of CoWP and doping the copper seed layer...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 343-348, November 14–18, 1999,
... to ohmic contact (Au-Ge-Ni) and pinholes in ohmic contact metal to active layers in substrate were found throughout the analysis. The pinholes causes the diffusion area to contact directly to the first level gold (Au) interconnect metal (M1). This results in Au-GaAs interdiffusion (mainly Ga) leaving...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 29-36, November 3–7, 2002,
... techniques, since the lateral heat diffusion is suppressed in this a.c. technique. However, a serious limitation is that the spatial resolution is limited to about 5 microns due to the IR wavelength range of 3 -5 µm used by the IR camera. Nevertheless, we demonstrate that lock-in thermography reliably allows...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 523-527, November 3–7, 2002,
...Abstract Abstract The presence of gold within a Sn/Pb solder joint accelerates diffusion between the Sn and Ni of the Ni- V/Cu underlying bump metallurgy (UBM), generating early failures. A concentration of 1.2 wt% gold in the solder joint can accelerate time to failure by a factor of 400 [3...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 370-375, November 12–16, 2006,
.... The procedure to perform the sample preparation is: 1. Grind unit from the bottom side of the package until the bulk silicon die is visible. 2. Dipping the unit into KOH 50% solution at 100 to 110 degree C to remove the bulk silicon 3. Dip unit in HF : DI water (1:10) at room temperature to remove any diffusion...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 257-261, November 4–8, 2007,
...Abstract Abstract The P-N junctions are part of the construction of semiconductor devices. They are formed by the combination of P-type and N-type diffusions. This paper discusses a soft (small early conduction) P-N junction breakdown. The P-N junction in this work is a part of a differential...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 53-58, November 2–6, 2008,
... was attributed to the compressive stress in the tin solder material, which was caused by diffusion of the end-cap metallization, formation of intermetallics, and thermal cycling of the soldered components. brittle fracture coefficient of thermal expansion embrittlement gold metallization gold plating...