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dielectric film

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Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 196-199, October 28–November 1, 2018,
... variation. In this study, EBIRCH is applied for a 3D NAND structure device fault isolation but suffered from nearby dielectric film deformation. The characterization of such dielectric deformation and the possible mechanisms of e-beam induced damage are discussed. As well, a threshold condition to avoid...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 418-422, October 31–November 4, 2021,
...Abstract Abstract Integrated circuit (IC) delayering workflows are highly reliant on operator experience to determine processing end points. The current method of end point detection during IC delayering uses qualitative correlations between the thickness and color of dielectric films observed...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 217-224, November 11–15, 2001,
... (> 1GHz) RISC microprocessor operation [1,2]. Such low k dielectric films dramatically reduce the line-to-line capacitance over conventional silicon dioxide dielectric films as well as FSG (fluorinated silicon glass) dielectric films. Electrical characterization of submicron copper interconnects...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 331-341, November 11–15, 2001,
... in respect to depth and Silicon lattice orientation obtained from one TEM sample A (110) B (100) C (110) Bottom thickness (nm) 7.1 6.4 6.9 Middle thickness (nm) 7.3 6.3 7.2 Top thickness (nm) 7.2 6.5 7.0 Conclusion Several different preparation techniques to access vertical dielectric films were developed...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 561-565, October 28–November 1, 2018,
...Abstract Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 324-329, October 28–November 1, 2018,
... with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer. capacitive switches dielectric charging mitigation insulator films metal...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 246-248, November 12–16, 2006,
...Abstract Abstract In this paper, the deformation mechanism of low K dielectric film under electron beams (E-beams) is discussed, and the effect of film deformation on the development of a low K dielectric film etching recipe is investigated. To provide meaningful data for process development...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 33-39, November 3–7, 2013,
... prompting the necessity for porous, ultra low k dielectric (ULK) films. Defect localization is difficult due to the complexity of these multiple metal layers along with the presence of the porous, low k dielectric films which exhibit shrinkage or void formation when exposed to an e-beam/FIB ion beam...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 447-454, November 11–15, 2012,
...+-deposited Pt. Xe+-deposited dielectric depositions using HMCHS/O2 precursors had an average resistivity of 1.27 x 1019 μΩ·cm (at ± 10V electrical bias), compared to a resistivity of 1.05 x 1014 μΩ·cm for similar Ga+-deposited dielectric films. A comparison between HMCHS/O2 and TMCTS/O2 dielectric...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 463-467, November 6–10, 2016,
...Abstract Abstract Dielectric film quality is one of the most important factors that will greatly impact device performance and reliability. Device level electrical analysis techniques for dielectric quality monitoring are highly needed. In this paper we present results using a new electrical...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 574-579, November 5–9, 2017,
... technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 436-440, October 31–November 4, 2021,
... minute changes in dielectric constant (k-value) and distinguish dopant levels over a wide range of concentrations with a spatial resolution of a few nm. For dielectric films and dopant levels, measurements are conveniently given in log-linear form with a repeatability well within the typical requirements...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 413-418, November 2–6, 2003,
... force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 33-37, November 14–18, 2004,
...Abstract Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 399-404, November 14–18, 1999,
... that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure. dielectric films electrochemical reaction electromigration failure analysis gold...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 209-215, November 11–15, 2001,
... and optical placement due to the small variation in surface topography. Integrating lower resistance copper plated interconnects with low-k dielectric films in a silicon- on-insulator technology offers faster circuit operation for higher performance microprocessors [10]. The electrical characterization...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 203-206, November 11–15, 2012,
... device reliability. To enhance the IC performance for new technologies, inter-level dielectric (ILD) made of SiO2 is replaced by low-k and ultra low-k (ULK) dielectrics, which possess a low dielectric constant but have poor mechanical strength. Therefore, the challenge in maintaining BEOL film stack...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 297-300, November 2–6, 2003,
...-cut and polished cross-sectional SEM specimens. Sample Description In this experiment, single and dual damascene processes were used to build Cu circuits: The first step is to deposit dielectric films, D1 to D4. D1 to D4 are SiN, FSG, SiN and FSG for FSG samples and SiOC, C-doped oxide, SiOC and C...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 1-5, November 12–16, 2006,
..., even at microwave frequencies with wavelengths on the order of centimeters, such a probe can achieve spatial resolution down to sub-microns. Our tool and the method for quantitative measurements of dielectric constant of blanket low-k films have been described in detail elsewhere [2, 3]. The probe...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 108-112, November 14–18, 2010,
... sizes, the implementation of twelve or more copper metallization levels coupled with low k back end of the line (BEOL) dielectric insulator films , the procedure of topdown delayering with parallel polish followed by topdown SEM inspection has been adopted. This approach is especially true for 32nm node...