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die fabrication

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Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 243-248, November 3–7, 2013,
... on the device level. The 28 nm LP Qualcomm “SHELBY” die is dual-sourced from both Samsung and TSMC, and is the primary die in the MDM9215 4G/LTE modem used in several smartphones. This represents a unique case of leading technology, available to the public, to qualify for electrical performance on the device...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 227-232, November 18–22, 1996,
...Abstract Abstract RECENTLY POWER MOSFETS have been used for satellite power supplies. NASDA has developed such a Power MOSFET for the space projects. It has a metal-type package, and the die is attached by Au-Si alloy to achieve high temperature operation (Tj=200°C). The fabricated device...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 221-226, November 18–22, 1996,
... power product fabrication line at its peak of quality with respect to die attach coverage. This paper will compare and contrast the three methods during thermal shock stress in two manufacturer's power Insulated Gate Bipolar Transistor (IGBT) using a lead-tin solder die attach material...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 365-372, November 11–15, 2001,
...(s) of failure in as-fabricated (unreleased) drop ejectors, and released, packaged drop ejectors tested in both air and water. Corrective actions implemented to mitigate the failure mechanisms and improve performance and reliability at both the wafer/die level and packaged level will be discussed...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 73-79, October 31–November 4, 2021,
... relationship between the die cost and the die area.[3] The adoption of multi die interposer packaging solutions such as stacked silicon interconnect technology (SSIT) 2.5D as shown in Figure 2 helps to drive early fabrication yields higher but adds challenges to the physical failure analysis and early debug...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 197-203, November 6–10, 2016,
... separate from the silicon substrate. If deprocessing artifacts are not well understood by the analysts then these can be mistakenly reported as ESD or fabrication defects. Introduction Die layer deprocessing, also termed as die stripback or delayering, is a systematic process of etching thin film layers...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 134-137, November 3–7, 2013,
...Abstract Abstract In wafer fabrication, Fluorine (F) contamination may cause fluorine-induced corrosion and defects on microchip Aluminum (Al) bondpads, resulting in bondpad discoloration or non-stick on pads (NSOP). Auger Electron Spectroscopy (AES) is employed for measurements of the fluorine...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 225-231, November 14–18, 2004,
... to produce joule heating, or electrostatic actuation using voltages to create electric fields. To qualify MEMS technology, these devices must undergo repeated characterization and testing and at both the die and system level. Electrical overstress (EOS) and electrostatic discharge (ESD) are two important...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 1-7, November 6–10, 2005,
...Abstract Abstract In this paper we present a new method to increase the lateral resolution available in laser scanning failure analysis tools. By fabricating a diffractive lens on the back side of the die, the area of the circuit of interest, directly underneath the lens, may be studied...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 143-148, November 11–15, 2001,
...Abstract Abstract The fabrication of semiconductor devices is handling, processing and test verification intensive all of which present opportunities for electrical over stress (EOS) or electro static discharge (ESD) to occur. Well-documented models for ESD exist. These include Human Body Model...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 227-231, November 10–14, 2019,
..., involving a critical etch step with aspect ratios of ~50:1. These high aspect ratio process steps present both fabrication and metrology challenges where the channel holes can bend, bow, and pinch off throughout the stack. Work presented herein demonstrates the capability of an automated workflow developed...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 423-429, October 31–November 4, 2021,
... with increased thinning, but the maximum temperature difference across the 3-μm die is less than 2°C. Ring oscillators throughout the FPGA fabric slow about 0.5% after thinning and another 0.5% when heated to 125°C, which is attributed to stress changes in the Si. CNC milling field programmable gate...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 133-137, November 3–7, 2002,
... a combination of wet etch and decapsulation processes and is described in detail. This technique was specifically developed to analyze a device failure that could be due to die fabrication, assembly, testing process or even a handling related issue. Figure 1: A typical construction of 2-stacked Die CSP package...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 362-365, October 31–November 4, 2021,
... Analyst has to know the exact failure mechanism to pinpoint whether root cause is in the die fabrication (fab) or packaging assembly (third party supplier). Challenges can befall the analyst: failure modes can recover which renders the unit functional and laboratories most often do not have complete...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 376-379, November 14–18, 2004,
... have been added to the dielectric stack in the back end metallization process of silicon die fabrication. The presence of low-K materials impacts the acquisition of dependable AMI data on flip chip package devices. The first change noticed when examining a low-K containing flip chip device with AMI...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 76-81, November 2–6, 2003,
..., which provide interconnection between Metal lines. From the Failure Analysis (FA) point of view, in addition to the typical failure mechanisms associated with die fabrication, testing, packaging and abnormal biasing, BOAC raises some new challenges for FA: 1. BOAC metal covers much of the underlying...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 56-60, November 4–8, 2007,
... in sensitivity. Unfortunately, the use of a commercial die fabrication process limits the thickness of metal and dielectric layers which can be used. The measured loss of a line realized in the present case is 0.75 dB·mm-1, giving a resonator Q factor of about 3. The increased thermal noise associated...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 33-37, November 9–13, 2014,
... packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 164-170, November 5–9, 2017,
... were performed on individual die with an ATE interfaced to a prober. A probe card using foundry compatible materials was designed and fabricated to our specifications. This allowed the wafers to be re-introduced into the foundry after testing for 3D hybridization. In testing, a quiescent power supply...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 475-478, November 6–10, 2005,
... of the short could either be in the solder bump or die. To augment this TDR characteristic, a short was fabricated between the failing bumps on a bare substrate (Figure 7). The TDR behavior of the fabricated short is similar to the TDR characteristic of the real failure an impedance drop is observed ~60pS...