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Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 403-407, November 3–7, 2002,
... Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 34-40, November 4–8, 2007,
... at the device level, and discusses options for probing and discrete characterization. atomic force probing failure analysis focused ion beam integrated circuit modification semiconductor devices FIB Backside Circuit Modification at the Device Level, Allowing Access to Every Circuit Node...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 493-498, November 2–6, 2008,
... Abstract A case study of a transient induced latch-up (TLU) problem is presented, which was identified during the development of a 60 V, 0.8 µm BiCMOS power control device. The mechanism was characterized by controlled transient latch-up testing and found to be fairly unusual, being triggered...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 43-51, November 15–19, 2009,
... Abstract We describe a technique that is used to obtain timing information from laser assisted device alteration (LADA). The technique uses a non-pulsed laser scanning microscope to obtain timing information with a temporal resolution on the order of microseconds. Custom software is used...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 88-92, November 15–19, 2009,
... the subtle doping defect affecting the Static Random Access Memory function in the 65nm generation node. Device failure due to a lack of Lightly Dope Drain (LDD) implant induced by an inconspicuous spacer defect was determined to be the root cause of the failure. 65 nm process doping electrical...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 230-233, November 15–19, 2009,
... be overcome by advanced TEM (Transmission Electron Microscope) technology, but how can we know if this suspected failure site is a real killer or not when looking at the insufficient e-beam images inside a dual beam tool? Therefore, a novel technique of device measurement by using C-AFM (Conductive Atomic...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 290-296, November 14–18, 2010,
... Abstract Applications of Micro-Electro-Mechanical Systems (MEMS) sensors have developed rapidly in the last decade, increasing the need of Failure Analysis (FA) to characterize abnormalities and to identify failure modes of various types of MEMS devices. One of the greatest challenges...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 91-97, November 13–17, 2011,
... Abstract This work presents the first application of a diagnosis driven approach for identifying systematic chain fail defects in order to reduce the time spent in failure analysis. The zonal analysis methodology that is applied separates devices into systematic and random populations of chain...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 189-197, November 13–17, 2011,
..." transistor structures that are part of a finished product. This paper explores the feasibility of APT analysis for fully packaged integrated-circuit microelectronic devices by detailing the various options available in specimen preparation and the resulting analyses. The goal of this work is to take an off...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 198-201, November 13–17, 2011,
... Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 234-237, November 13–17, 2011,
... Abstract The counterfeiting of semiconductor devices has become an important contributor as more components are used in the increasingly sophisticated audio and navigation systems while more suppliers are moving manufacturing plants off-shore. This paper presents a case study on how the authors...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 269-274, November 13–17, 2011,
... Abstract Owing to the limitations of physical failure analysis (FA) techniques and fault localization techniques, the nano-probing tool, which has both the device characterization ability as well as the necessary sensitivity to characterize the non-visible defects and marginal fails, has...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 322-326, November 13–17, 2011,
... in semiconductor. 3D transmission electron microscopy annealing SOD failure analysis nano probe analysis ring type crystalline defect semiconductors silicon substrate Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect Jong Hak Lee, Yu Jun Lee, Jung Sam Kim, Seo...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 434-438, November 13–17, 2011,
... Abstract Using nanoprobing techniques to accomplish transistor parametric data has been reported as a method of failure analysis in nanometer scale defect. In this paper, we focus on how to identify the influence of Contact high resistance on device soft failures using nanoprobing analysis...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 31-39, November 15–19, 1998,
... Abstract The use of scanning kelvin probe microscopy (SKPM) for analyzing two-dimensional dopant profiles on production-level silicon CMOS devices is described, with images of topography and dopant profiles presented. Both plan-view and crosssectional analyses are performed to measure CMOS...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 163-168, November 15–19, 1998,
... Abstract Enhancement of Existing Fault Isolation Techniques for CMOS VLSI Failure Analysis is important in keeping pace with device design and process technologies. Recently, we enhanced our photoemission microscopy capability by applying heat to the device during analysis1. This provided...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 183-188, November 14–18, 1999,
.... accelerated operational test accuracy gallium arsenide field effect transistors gate leakage current junction temperature thermal resistance 183 A Technique for Measuring Device Temperature with High Accuracy in Accelerated Operational Life Tests K. Takeda, M. Harigaya, Y. Miyazaki NEC Corporation...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 247-254, November 14–18, 1999,
... Abstract Device repair using Focused Ion Beam(FIB) systems has been in use for most of the last decade. Most of this has been done by people who have been essentially self-taught. The result has been a long learning curve to become proficient in device repair. Since a great deal of the problem...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 343-348, November 14–18, 1999,
... in the bulk substrate similar to kirkendahl voiding. Additional defects were found when the device was electrically biased. The problem was quickly fixed by slightly adjusting an angle in the sputtering process to provide a complete ohmic contact metal coverage on the diffusion contact and subsequently...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 107-115, November 12–16, 2000,
..., generating a bench marked failure analysis process flow specifically for Flip-chip packaged devices becomes necessary. In this paper, the failure analysis process flow for Flip-chip package devices along with different failure mechanisms will be discussed and demonstrated. For instance, even in a simple...