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defect inspection

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 403-405, October 31–November 4, 2021,
...Abstract Abstract This case study shows that wafer notch orientation can have a significant effect on defect capture rates obtained during defect inspection. The discovery was made when a review of historical data showed that the relationship between defect densities and yield varied greatly...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 349-352, November 5–9, 2017,
... analysis in semiconducting electronic materials. electron beam induced optical emission electronic devices failure analysis quantitative cathodoluminescence microscopy scanning electron microscope semiconductor materials Failure analysis and defect inspection of electronic devices by high...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 232-237, October 28–November 1, 2018,
... of juggling between tools is streamlined into a seamless process. In this paper, the successful integration of Prober Shuttle and plasma FIB to isolate and visualize real defects on sub-20 nm microprocessor chips are presented. BEOL defects defect inspection electron beam absorbed current electron...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 401-408, November 14–18, 2004,
... results revealing the key contributors to the formation of these defects, and a method of in-line identification by correlating SEM based in-line defect inspections to end of line SRAM fail bit maps. Silicon defects that form along the edge of an active region connect the source and drain with a low...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 205-210, November 1–5, 2015,
...Abstract Abstract E-beam Inspection (EBI) is used for in-line detection of defects in semiconductor manufacturing. This paper highlights a physical defect mode application where traditional defect inspection techniques, such as broadband plasma and dark field inspection were ineffective...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 250-254, November 9–13, 2014,
... analysis fault isolation front end of line IC devices polishing sample preparation semiconductor manufacturing Effective and Efficient FEOL Defects Localization/ Inspection by Selective Mechanical/Chemical deprocessing Ng Hui Peng, Teo Angela, Ang Ghim Boon, Yip Kim Hong, Dr Chen Chang Qing, Dr...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 591-598, November 3–7, 2002,
...Abstract Abstract Electrical failures due to front-end defectivity may be detected in-line using large area PVC inspection. Application of this method to a self-aligned contact module of a memory chip is presented. Most of the defectivity affecting this module is non-visual. The PVC inspection...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 270-274, November 4–8, 2007,
... Detection and Verification of Silicide Pipe Defects on SOI Technology Using Voltage Contrast Inspection Oliver D. Patterson, Hyoung H. Kang, Jay Strane, Christian Lavoie, Karl Barth, Xu Ouyang IBM, Hopewell Junction, NY Kevin Wu KLA-Tencor, Hopewell Junction, NY Abstract A methodology for detecting silicide...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 241-245, November 9–13, 2014,
... learning, in-line defect inspection is implemented in critical layers during wafer manufacturing. In-line defect inspection is able to detect defects. However, in-line defect inspection alone cannot predict the impact of defects on device functional yield. Failure analysis is an effective method of finding...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 494-497, November 3–7, 2013,
... of sites can be processed with the additional support of an in-line FIB. Both physical defect detection and voltage contrast inspection modes are useful for this application. Voltage contrast mode is necessary for isolation of buried defects and is the preferred approach for opens, because it is faster...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 587-589, November 3–7, 2002,
...Abstract Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 337-341, October 31–November 4, 2021,
...Abstract Abstract With manufacturers now capable of creating transistors in the 5-7 nm node range, the ability to isolate, inspect, and probe individual metal and via layers is of the utmost importance for defect inspection and design validation. These isolated layers can be inspected...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 144-148, November 15–19, 2009,
... of this paper attempts to develop approaches for failure analysis of OTFTs. We successfully demonstrate a non-destructive technique for defect inspection and localization, exactly specifying the failure of OTFT with a void existing in the organic dielectric. Application of optical beam induced resistance change...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 606-616, November 11–15, 2012,
...Abstract Abstract In this paper, a novel inspection mode of electron beam inspection (EBI) that can effectively detect buried voids in tungsten (W) plugs is reported for the first time. Buried voids in metal are a defect of interest (DOI) that cannot be captured by either optical inspection...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 380-385, November 5–9, 2017,
... behind, especially in multi-fin structures. This residue was poorly detected by existing Broad-Band-Plasma inspection and thus required Electron Beam Inspection. However, this physical inspection is challenging due to high aspect ratio of the gate and an insulating wafer surface. The defect was verified...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 579-586, November 3–7, 2002,
...Abstract Abstract Logic mapping is the process of automatically correlating inline inspection defects with diagnosed faults from electrical testing. This paper presents a software based tool for this purpose and focuses on its specific use for impacting baseline yield enhancement. A detailed...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 569-575, November 3–7, 2013,
...) milling will be introduced and discussed. Figure 1(c) illustrates the proposed new Top- down view De-layering with Planar Slicing XFIB (TD-PS- XFIB) technique. The introduced technique can 1) alleviate the de-layering difficulty, 2) is able to provide a better planar view for defect inspection and 3...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 466-473, November 1–5, 2015,
... or a specific location with a known defect that requires verification. The novel paradigm is an integrated approach to sample preparation and X-ray inspection to optimize resolution and throughput time performance with minimally deprocessed sample. This paper, covering the limitations of X-Ray imaging and 3D...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 571-577, November 3–7, 2002,
... as failure analysis engineering performs full wafer deprocessing with inspections at each layer. This type of approach is very inefficient, requires a lot of manpower, and provides poor feedback for defect learning since the sample size is so limited and the time delay is too long for optimum effectiveness...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 212-217, November 13–17, 2011,
... analysis had led to an exact model that was able to explain the failure mechanism. This model pinpointed a PFET extension implant blockage. Subsequent silicon etch analysis directed by the model prediction brought out the non visual defect (NVD). Inline inspection at the extension implant photo step...