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crystalline defects

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Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 69-78, October 27–31, 1997,
...Abstract Abstract In wafer fabrication (fab), stacking faults (SF) & crystalline defects in the silicon substrate will affect the yield. Wright Etch is the most common chemical etching method used to delineate SF on both (100) & (111) silicon surface. However, when Wright Etch is used...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 322-326, November 13–17, 2011,
...Abstract Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 425-430, November 11–15, 2001,
...Abstract Abstract In this paper, three low yield case studies in wafer fabrication are reviewed. These issues/problems include thicker gate oxide due to contamination from the wafer fab process, QBD failures due to silicon crystalline defects caused by charging during the BN+ implant process...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 344-349, November 6–10, 2005,
... subtle differences in material composition. The second is a crystalline dislocation through an optoelectronic device that is best observed using TEM. Details of resistive short characterization and crystalline defect characterization performed are provided. TEM/STEM has shown to be a practical tool...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 417-421, November 11–15, 2012,
..., a yield issue in nickel-silicide (NiSi) piping is investigated. The failure had characteristics that fell into areas that avoided detection. A planar transmission electron microscope of the substrate at the defect site was performed to look for evidence of crystalline defects that would allow a conduction...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 245-248, November 2–6, 2008,
... failure inspection, some specific defects still need more effort. The electrical phenomenon and analysis of a crystalline defect will be demonstrated in this paper. The details will be discussed below. conductive atomic force microscopy crystalline defects electrical resistance failure analysis...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 502-507, November 9–13, 2014,
...Abstract Abstract The presence of crystalline defects, including dislocations and pipeline defect, is detrimental to both the processing and the intrinsic quality of semiconductor devices. The electrical parametric or functional failures generated by those defects require accurate...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 363-367, October 28–November 1, 2018,
...Abstract Abstract As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 260-264, November 2–6, 2008,
...) [1-4] is introduced to perform junction-level fault isolation prior to attempting PFA. According to J. P. Morniroli [5], crystalline defects affect convergent-beam electron diffraction (CBED) and large angle convergent-beam electron diffraction (LACBED) patterns, so CBED and LACBED techniques were...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 211-216, October 31–November 4, 2021,
... the mapping routine can be optimized to detect extended crystalline defects in III/V layers, selectively grown on shallow trench isolation patterned Si wafers. III/V layer crystalline defects electron channeling contrast imaging epitaxial films nano-ridge structure ISTFA 2021: Proceedings from...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 207-212, November 18–22, 1996,
... with TEM. In particular, it is found to be a powerful method to identify the nature of crystalline defects which cause the failures. This work presents the detailed procedure and demonstrates its successful applicability via studying a leaky bipolar transistor in 0.5μm BiCMOS devices (one failure of more...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 88-91, November 2–6, 2008,
... studied. In this study, poor wet clean process was defined as the cause of the silicon substrate surface damage and crystalline defect. It induced poor oxide deposition, which reduced breakdown voltage. Additionally, 12hrs BOE dip was shown to be an effective method for removing poly and oxide layers from...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 315-316, November 2–6, 2008,
... physical failure analysis technique using 3D rotation STEM imaging. It describes the electrical method of analyzing the cause of failure. Trying to determine with 2D imaging if the defect was a crystalline or not was problematical. To resolve the issue, a pillar type of specimen was made by utilizing a 3D...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 205-209, November 9–13, 2014,
... using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation. CMOS NFETs crystalline silicon dislocations doping defects electrical characterization leakage current resistors scanning capacitance microscopy...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 63-68, November 12–16, 2000,
... of the particle or contamination. In failure analysis, seven kinds of killer defects were found in Flat ROM devices. They are: silicon crystalline defect on silicon substrate, BN+ line breakdown defect, BN+ line opening defect, missing contact defect, poly bridging defect, metal bridging and metal filament...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 177-181, November 15–19, 2009,
... voltage alteration (TIVA). After the defect location if found the sample is delayered to expose the gate oxide. Sometime, Wright Etching is performed to check for silicon crystalline defects, which might have caused a GOI failure. In general, the shape of the defect might provide information...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 189-195, November 9–13, 2014,
... of crystalline defects, such as dislocations and stacking faults, than homogeneous semiconductors like silicon. Furthermore, due to cost and availability of suitable processing equipment, it is highly likely that at least the first generations of III-V devices will be built on silicon. This leads to a lattice...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 137-142, November 14–18, 2010,
...Abstract Abstract Crystalline silicon used for fabrication of solar cells, such as multicrystalline silicon (mc-Si), contains a high density of extended crystal defects. Since mc-Si wafers exhibit an inhomogeneous defect distribution, there is a need to combine the spectral capabilities...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 336-339, November 10–14, 2019,
.... In this experiment, the single bit NVM fail was analyzed. Different PFA methods used during the analysis, failed to find the defect. Nanoprobing was employed to precisely isolate the defect. Key word: nanoprobing, NVM, subtle defect, Poly-crystalline, floating gate electrical appliances electron charge...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 419-423, November 5–9, 2017,
...Abstract Abstract Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR...