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cross-sectional transmission electron microscopy

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Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 318-322, November 1–5, 2015,
... of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency. DRAM failure analysis focused ion beam...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 95-100, November 18–22, 1996,
...Abstract Abstract This paper describes how faulty thin-film transistors (TFTs) having fragile structures in themselves can be characterized by cross-sectional transmission electron microscopy (X-TEM) through the achievement of pinpoint accuracy in focused ion beam (FIB) etching. We demonstrate...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 140-142, November 5–9, 2017,
.... Several analytical techniques, namely, Scanning Electron Microscopy (SEM), plan-view and cross-section Transmission Electron Microscopy (TEM) with Energy Dispersive X-ray spectroscopy (EDX), Electron Energy Loss Spectroscopy (EELS) and Z-contrast tomography were employed to characterize the defect...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 237-242, October 27–31, 1997,
...Abstract Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSi x ) was studied. Using the combination method...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 236-238, November 14–18, 2010,
...Abstract Abstract A scanning electron microscopy (SEM) based nano-probing system is used in this study to clarify nickel silicide phase beyond process window. According to the nano-probing measurement result and the cross-sectional transmission electron microscopy (TEM) images, phenomena...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 108-112, November 14–18, 2010,
... defect is localized with BSE in situ, subsequent imaging by cross sectional Transmission Electron Microscopy (XTEM) combined with elemental analysis by energy dispersive X-Ray analysis (EDX) or electron energy loss spectroscopy (EELs) can be performed without the risk of introducing artifacts...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 198-201, November 13–17, 2011,
...Abstract Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 248-254, November 14–18, 2004,
... of specific area cross section transmission electron microscopy (TEM) often reveals a micro-layer of foreign material between semiconductor layers as the failure mechanism [1]. These thin layers of foreign matter are usually found at the interface between via plugs/contacts and metal lines resulting in open...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 419-424, November 11–15, 2001,
... device regions, (3) transmission electron microscopy imaging and electron diffraction of the diode cross-sections for determination of the nature of the defects and the structure of the phases present; (4) synchrotron x-ray section topography for determination of the some of the dislocations origins...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 315-321, November 12–16, 2000,
... (Field Emission Auger Electron Spectroscopy) analysis with FIB (Focused Ion Beam) preparation were used for physical analysis. Cross-sectional SEM and TEM observations showed a gap with foreign material (FM) between the bottom of the metal line and the top of the W stud, possibly from the W CMP (chemical...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 93-99, November 3–7, 2002,
... high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 282-287, November 2–6, 2003,
... after trimming the sample into a micro-pillar 2-5 micron squared in cross-section and 10 -15 micron in length (micro-pillar sample). High angle annular dark field (HAADF) STEM, bright field STEM and secondary electron microscopy (SEM) images are obtained at 200kV resulting in threedimensional and cross...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 351-355, November 12–16, 2006,
... metallization and reflow processes. This testing includes mechanical and thermal stress tests and a detailed failure and material analysis. Besides the commonly used analysis methods like optical microscopy, scanning electron microscope (SEM) imaging of cross sections, fracture planes and energy dispersive X...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 397-405, November 12–16, 2000,
...Abstract Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 491-495, November 9–13, 2014,
... with different current intensities indicating weak points. These soft defect areas are investigated in comparison to references which were analyzed by using cross sectioning in a dual beam FIB/SEM system followed by a high resolution Transmission Electron Microscopy (TEM) investigation. The feasibility...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 446-453, October 31–November 4, 2021,
...) techniques, and open defects are isolated by active voltage contrast imaging in a scanning electron microscope (SEM). The results are confirmed by transmission electron microscopy (TEM) cross-sectioning. fault isolation optical beam-induced current photon emission microscopy scanning electron...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 182-185, November 6–10, 2016,
... at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 241-244, November 12–16, 2000,
... an alternative to conventional cross-section polishing, top down polishing or FIB milling methods. A DRAM chip was ground and polished down to a certain level from the chip backside. An etching solution was then applied to enhance the DTs appearance. 3D DTs can be inspected in scanning electron microscopy (SEM...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 213-217, November 18–22, 1996,
... resistors scanning electron microscopy silicon transmission electron microscopy Proceedings of the 22nd International Symposium for Testing and Failure Analysis, 18 - 22 November 1996, Los Angeles, California TEM Cross-Sectional Analysis of ESD Induced Damage in Input Protection Circuitry P.J. Nguyen...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 209-213, October 28–November 1, 2018,
... based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of the method and factors to monitor vigilantly. Dealing with FIB machining, any sample preparation geometry can be achieved, as it is for transmission electron microscopy (TEM) sample preparation: cross-section...