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conductive atomic force microscopy c-afm

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ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 511-516, November 3–7, 2013,
...Abstract Abstract Conductive-Atomic Force Microscopy (C-AFM) is a popular failure analysis method used for localization of failures in Static Random Access Memory (SRAM) devices [1-4]. The SRAM structure has a highly repetitive pattern where any abnormality in a failed cell compared...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 413-418, November 2–6, 2003,
... and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article. conductive atomic force microscopy dielectric films failure analysis fault localization gate oxide...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 601-605, November 11–15, 2012,
... resistance or marginally open vias. The second case involves early breakdown of large capacitors. The large size of the capacitor and the lack of ways to track electrical flow during diagnosis made it difficult to isolate the defect. The paper shows that conducting atomic force microscopy (C-AFM...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 511-519, November 12–16, 2000,
...Abstract Abstract In this work, we introduce Conducting Atomic Force Microscopy (C-AFM) as a novel technique for the determination of the local effective electrical oxide thickness with a lateral resolution of a few nanometers and a thickness resolution in the sub ångström range...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 178-181, November 12–16, 2006,
...Abstract Abstract Conductive Atomic Force Microscopy (C-AFM) is a useful tool for both electrical failure analysis (EFA) and physical failure analysis (PFA). In this paper, the root cause of a physical failure in an analysis image was verified from the evidence of two-dimensional AFM profile...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 290-294, November 1–5, 2015,
... of conductive atomic force microscopy (C-AFM), we can get an electrical verification at the same time. We discuss the relationship of VC and C-AFM as well as what the root cause of failure is in this case. conductive atomic force microscopy current intensity electrical verification focused ion beam...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 473-482, November 3–7, 2002,
...Abstract Abstract Conducting Atomic-Force Microscopy (C-AFM) has a strong potential for the characterization of thin silicon oxides on the nanometer scale. Here we consider difficulties and possible errors that may arise during C-AFM experiments. Using electrostatic simulations it is shown...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 235-238, November 6–10, 2005,
...Abstract Abstract This paper describes gate oxide defect localization and analysis using passive voltage contrast (PVC) and conductive atomic force microscopy (C-AFM) in a real product through two case studies. In this paper, 10% wt KOH was used to etch poly-Si and expose gate oxide...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 406-412, November 2–6, 2003,
...Abstract Abstract In this work a procedure is presented to look beneath the surface of a SiO2 film and to study the impact of the SiO2/Si interface morphology on the tunneling current, with high lateral resolution, by use of combined Conductive Atomic Force Microscopy (C-AFM) and Intermittent...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 257-259, November 12–16, 2006,
...Abstract Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 293-295, November 13–17, 2011,
... developed to improve the precision of defect isolation. A technique with more precise fault isolation capability is needed when the test pattern density increased. In this paper we have isolated faults within a dense high Rc array by using conductive atomic force microscopy (C-AFM). The fault sites...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 491-497, November 14–18, 2004,
...Abstract Abstract A method to differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short defect in real products by analyzing the I-V curves acquired by Conducting-Atomic Force Microscopy (C-AFM) is presented. The method allows not only the correct short path to be identified...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 269-272, November 2–6, 2008,
... application. The schematic is shown in Figure 5. Figure 5: A schematic of Conductive Atomic Force Microscopy. C-AFM, identified the failure point. By combining current mapping with an IV-curve, the leakage path can be found, including gate oxide leakage, junction leakage and poly contacts shorted to other...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 449-453, November 6–10, 2016,
...Abstract Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 214-218, November 4–8, 2007,
... analytical instrumentation or are symptomatic of an authentic or single suspect. The methodology described here was developed to expand the capabilities of nano-probing via C-AFM (conductive atomic forced microscopy), which can acquire detailed electrical data, and combining the technique with reasoned...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 46-48, November 6–10, 2005,
... the use of internal probing techniques like C-AFM [2] (Conductive Atomic Force Microscopy) and a nanoprobing technique [3] for characterizing electrical properties and understanding the root cause. conductive atomic force microscopy electrical characterization electrical properties electrical...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 327-329, November 13–17, 2011,
... sample is tested first with the same settings on topography and Conductive Atomic Force Microscopy (C-AFM). Since this Cu contact sample had been exposed to air for few days, there is no conductivity on C- AFM images due to surface oxidation as shown in Figure 2. In addition, surface smearing and damage...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 463-467, November 6–10, 2016,
... Force Microscopy (AFM) is commonly applied as a failure analysis technique with precise fault isolation capability on high-density patterns at the contact level. Typically, faults are isolated with nanometer scale precision by using conductive atomic force microscopy (C-AFM) images, while point contact...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 403-405, November 13–17, 2011,
.... As a result, a majority of the failure modes can occur in this DT process. The failure of ONO layer can be isolated by means of current electrical failure analysis tools such as Positive Voltage Contrast (PVC), Conductive Atomic Force Microscopy (C- AFM), memory bitmap analysis, etc. However, the failure...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 336-343, November 1–5, 2015,
... observations without any influence of surface-adsorbed water or humidity [5]. Nevertheless, for conductive atomic force microscopy (C-AFM), it is well known that when a positive voltage is applied during the sample stage to map conductivity, as well as in the current voltage (I V) curve acquisition process...