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chip recombination

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 269-273, October 31–November 4, 2021,
... placed edge-to-edge with test chips, planar deprocessing can be achieved using conventional finger deprocessing techniques. This paper describes the newly developed method, step by step, and presents two examples demonstrating its use. chip edge defects chip recombination FinFET devices planar...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 19-24, November 2–6, 2003,
...Abstract Abstract In this paper we discuss the use of Emission Microscopy (EMMI) to examine the events leading to latchup for various Input/Output (I/O) pins of a test chip in order to study the factors that impact latchup sensitivity of VLSI chips. The goal of our study is to identify...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 548-550, November 11–15, 2012,
... in diodes. Introduction This new technique was developed to localize semiconductor failures where unwanted or unexpected electron-hole recombination is present. In conventional analysis, if diodes were found to be leaky (high leakage current), a digital multimeter was used to monitor the diode resistance...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, d1-d96, October 31–November 4, 2021,
... (Laser) Photon Emission by Electronic Activation Readiness for Future Technologies Hardware Security: Attack Risks by Photonic Localization Techniques 1 Outline Photonic Localization Techniques: Key to Signal Tracking in IC Debug and Failure Analysis Transmission: Chip Backside Access...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 275-280, November 14–18, 2010,
... to premature failures in deep green and deep UV LEDs. The paper shows how the TIVA/LIVA techniques were successfully used to characterize defects in wide bandgap AlGaN- and InGaN-based LEDs. The defects in the green LEDs appear to be electron-hole pair recombination sites and the observed voltage signals...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 153-157, October 27–31, 1997,
... biased conditions are discussed. In addition, the application of SPEMMI for determination of failures that occur in industrial IoDQ-failed VLSI chips is illustrated. diodes NMOS transistor photon emission spectroscopy spectrometers spectroscopic photo emission microscope very large-scale...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 168-172, November 3–7, 2013,
... following injection by a pump laser. However, without the local potential well created by the active transistor gate, these excess laser-injected free carriers move away from their local injection until recombination occurs. In crystalline materials this effect has been studied, even on ultrafast time...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 109-116, November 14–18, 1999,
... and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 160-163, November 5–9, 2017,
... of the chip with deep trench (grey) and n- type buried layer (NBL). Emitter is heavily doped n-type. Base and collector are medium to lightly doped, with p+ (cyan) and n+ bars for contacts, respectively. Active areas without contacts are covered with silicide block dielectric layer. In the circuit, B and E...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 317-321, November 5–9, 2017,
... significantly remove the silicate polymers and increase the yield. 90 nm process copper plating electron beam absorbed current photoresist root cause analysis scan chains silicate polymers system on a chips very large scale integration X-ray energy dispersive spectroscopy Root Cause Analysis...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 479-485, November 12–16, 2000,
.... The interferometric probing scheme will be described in detail and results will be presented. Introduction Flip chip packaging and the ever-increasing number of metal interconnect layers on advanced CMOS logic process technologies has made access to internal signal nodes from the chip s frontside effectively...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 311-316, November 2–6, 2003,
... recombination centers can not be observed. Furthermore, due to the increasing metallization layers and complexity in device packaging (e.g. flip chip), the emission is only observable from the device s backside. This requires transmission of the emission through the substrate, which is opaque to wavelengths...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 393-399, November 18–22, 1996,
... PERFORMING FAILURE ANAL­ YSIS on a multi-layer metal device, the failing area of a cir­ cuit is physically located underneath of upper layer metal lines, such as power buses, high density routing signal lines and bond pads, and on a specially packaged device, such as a flip chip, where the front side...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 418-423, October 28–November 1, 2018,
... to localize many defects related to junctions in semiconductor devices by detecting light emission caused radiative recombination of electron-hole pairs in the semiconductor. Various defects and failure mechanisms of semiconductor devices produce photon emission, and its mechanism has been studied...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 214-219, November 2–6, 2008,
... to the silicon one and basically includes electrical diagnosis, chip access, defect localization and physical analysis. Nevertheless, sample preparation according to the different types of transistors and materials is very complex and challenging. For defect localization, we have intensively used light emission...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 348-350, November 4–8, 2007,
...Abstract Abstract In reliability test some chips suffered functional failure. Through a series of failure analysis experiments, the root cause was determined to be a silicon dislocation across LDD (Lightly Doped Drain) area causing p-n junction leakage. However, those failed samples all passed...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 47-51, November 18–22, 1996,
... radiation was found to lie predominantly in the long-wavelength portion of the visible spectrum (>600 run), indicating mat the photoemission was caused by electron-hole recombination in forward-biased pn junctions, which is characteristic of latchup, rather than by high-field avalanche multiplication, which...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 435-442, November 12–16, 2000,
...Abstract Abstract This paper describes a new method for the mapping of local temperatures in the active region of highpower III-V semiconductor transistors for microwave applications. The measurement technique involves scanning a focused laser beam at the surface of a chip inside its package...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 336-343, November 6–10, 2005,
... recombination sites these arrays degrade the optical and electrical properties of the laser device. However, while visually imposing, the dislocation arrays represent only the final cause, not root cause of failure. Rather, non-radiative recombination of minority carriers at a defect site in the active layers...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 17-21, November 12–16, 2000,
... for 30keV electrons in silicon. In an earlier paper, the single contact optical beam induced current technique (SCOBIC) [2] was developed using for a 633 nm HeNe laser for frontside analysis. With the widespread use of flip-chip and lead-on- chip packaging with multilevel metallization, there is a need...