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channel tilt

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
... methods, enabling enhanced process monitoring and control. 3D fiducial 3D NAND memory channel etch offset channel tilt PFIB milling SEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 476-479, November 6–10, 2016,
... dislocations in the SEM is available using the phenomenon of electron channeling [1, 2]. Electron Channeling Contrast Imaging (ECCI) collects backscattered electrons to visualize dislocations when the crystal is tilted to the so called two-beam condition; otherwise the dislocations are not visible. The two...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 306-308, October 31–November 4, 2021,
... profiles such as bending, bowing, and tilting, as shown in Figs. 1 and 2. Among them, especially, the channel hole bending is the most serious defect in the case of highly-stacked VNAND flash memory because it can leads to the catastrophic failure of VNAND operation: stored data loss and product...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 59-63, November 6–10, 2005,
... of the dislocation in y- direction, the sample was tilted around the z-axis. In figure 6 the sample was tilted by 25 degrees with respect to the edge-on orientation of the gate. It can be seen that the defect is crossing the channel at the level of the source / drain contact. Figure 5: Cross section TEM image...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 313-315, October 31–November 4, 2021,
... of image (0, 0) to reference feature on top image. The verticality was measured about 11 nm offset from top to bottom region. Also, we confirmed that the channel hole is tilted less than 1 degree using total height of 3D NAND and offset. The point of this experiment that if there is no fiducial mark within...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 502-507, November 9–13, 2014,
... area; the observed dark hairline is suspected to be unexpected N doped silicon at the surface of the p-doped channel. The PVC images were obtained using high-resolution SEM with sample tilt and beam deceleration mode (consisting in application of a positive voltage to the sample holder...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 224-231, October 28–November 1, 2018,
... in a high aspect ratio structure of up to 10 µm in depth from the sample surface. Figure 3b: Process flow. Tilt sample stage 30° 33.5° and FIB cross-section milling tilt sample stage to 0° and e-beam deposition tilt sample stage to 52° and FIB cleaning cross-section perform S&V process. Then the SEM...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 363-367, October 28–November 1, 2018,
... decrease or compromise device performance. For this reason, non-destructive, high throughput and reliable analytical techniques are required. In this paper Electron Channeling Contrast Imaging (ECCI), large area mapping and defect detection using deep learning are combined in an analytical workflow...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 35-40, November 12–16, 2000,
... instruments. In dual beam instruments, secondary electron imaging with an electron source is also possible. While secondary electron imaging using an ion source gives excellent information about ion channelling (grain boundaries) as well as about potential contrast and topography, secondary ion imaging...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 209-214, November 10–14, 2019,
... tomography [11-13], was applied to characterize the shape and position of the vertical channel holes throughout an 8x8x8µm volume in 3D-NAND devices. The position and shape of each hole can be analyzed in terms of diameter, ellipticity, bowing/bending and tilt. Variation in any of these parameters can affect...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 146-149, October 31–November 4, 2021,
..., Redondo Beach, CA, USA Abstract The sub-50 nm Indium Arsenide Composite Channel (IACC) High Electron Mobility Transistors (HEMTs) are fabricated on 100 mm Indium Phosphide (InP) substrates. This technology offers the best performance for low-noise and high-frequency, space and military applications...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 302-306, November 6–10, 2005,
... microscopy Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors M.L. Anderson*, P. Tangyunyong, T.A. Hill, C.Y. Nakakura, T.J. Headley, and M.J. Rye Sandia National Laboratories, Albuquerque, NM USA *mlande@sandia.gov...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 343-350, November 12–16, 2006,
...Abstract Abstract The aggressive scaling of metal oxide semiconductor field effect transistor (MOSFET) device features, including gate dielectrics, silicides, and strained Si channels, presents unique metrology and characterization challenges to control electrical properties such as reliability...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 465-470, November 14–18, 1999,
...Abstract Abstract Light emission and heat generation of Si devices have become important in understanding physical phenomena in device degradation and breakdown mechanisms. This paper correlates the photon emission with the temperature distribution of a short channel nMOSFET. Investigations...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 89-94, November 18–22, 1996,
... and channeling direction [4]. Finally the AFM observation of surface topography is carried out to analyze structures such as grains and voids (c). In this work, FIB irradiation was done with and without sample rotation to examine whether sample rotation affects the surface topography of samples or not. An FIB...
Proceedings Papers

ISTFA2021, ISTFA 2021: Tutorial Presentations from the 47th International Symposium for Testing and Failure Analysis, k1-k87, October 31–November 4, 2021,
... and the sample should be homogeneous and symmetric. The sample should be Conductive Flat Sufficiently large These sample configurations do not work well with stage biasing: Flat sample Tilted sample 56 Electron Channeling Contrast Imaging 57 Electron Channeling Contrast Imaging (ECCI) From D. Joy et al...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 39-45, November 3–7, 2002,
...]. This consists of a positively charged wire, tilting the wave fronts against each other. It is situated in the plane of the selected area aperture and can be rotated to the optimum position with respect to the sample. The resulting hologram, (fig. 3), is recorded by a high resolution CCD-camera. The deformation...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 144-149, November 15–19, 2020,
... at a stage tilt of 52°. 145 For wafer-based semiconductor structures, the most common orientation of an ROI relative to the fabricated orientation in the wafer are 1) normal, 2) inverted, and 3) cross-section. For a normal orientation (Fig. 2a-c), a specimen is lifted out directly to the top of a TEM half...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 382-388, November 6–10, 2005,
... of the needle stub is shown in Figure 1 (d). Figure 2 shows external view of the FIB-STEM compatible sample rotation holder. The needle stub is mounted in the center of the rotation mechanism of the holder and the sample is positioned in the center of tilting axis to minimize displacement of the sample during...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 75-85, November 3–7, 2013,
... was connected with two other boards, and testing found that this optocoupler had no output. Electrical probing reportedly found that there was an open circuit between pins 7 and 8, the anode and cathode respectively of the light-emitting diode (LED) that serves as the channel 4 input. After the part was removed...