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channel etch offset

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Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 313-315, October 31–November 4, 2021,
... of the region of interest, the method can resolve offsets down to a few nm. Such precision is critical, as the paper explains, because the radius and thus electrical characteristics of each memory cell is determined by the etching angle. channel hole etching angle memory cells three-dimensional...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 342-346, October 31–November 4, 2021,
... methods, enabling enhanced process monitoring and control. 3D fiducial 3D NAND memory channel etch offset channel tilt PFIB milling SEM imaging ISTFA 2021: Proceedings from the 47th International Symposium for Testing and Failure Analysis Conference October 31 November 4, 2021 Phoenix...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 417-422, November 2–6, 2008,
... that are failing were identified, the best approach for identifying nanoscale defects was determined. In this study, several types of nanoscale defects, such as offset spacer residue, salicide missing from the active area, doping missing from the channel, gate oxide defects, contact barrier layer residue...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 251-257, November 3–7, 2002,
... channels, there was strong evidence to suggest that the incorrect offsetting of the band- gap reference circuits caused the problem of the Rx output voltage swing. In this case, after the test case data was collected and compared with the design data, the fault was quickly isolated. In retrospect...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 302-307, November 10–14, 2019,
... with gallium FIB, it was possible to observe a singular EBIC response coming from the bulk [Fig.9]. At first glance, this does not have any specific significance; the gate is indeed grounded to avoid a possible induced channel effect, and the polarization in the offset is reversed. This inversion is translated...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 329-333, November 15–19, 2009,
... 7: (Top) In-line image of actual resist pattern. (Bottom) Ideal pattern shape from print test. Layout Study Further layout study revealed two interesting things about the failing transistor. First, the N diffusion in an N well tap was offset from alignment with the P diffusion channel. See Fig. 8...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 502-507, November 9–13, 2014,
... and GND, with a leakage about 2.6µA at 2V compared to few nA on a good part (Fig. 1a On Product 2, the failure was due to an offset of 30mV on the current sense circuit of the channel 2, generating a functional failure. The micro-probing analysis demonstrated that the failure was due to a drain-source...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 365-372, November 11–15, 2001,
... the substrate. This stringer created an electrical path from poly 0 to substrate (Fig. 6) which resulted in drop ejectors 1-7 failing electrical tests. These stringers would not have been detected had there not been an alignment offset of the Bosch etch channel. Misalignment of the Bosch etch removed...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 41-46, November 15–19, 1998,
..., but no electrical proof of the short could be seen. To prove the short existed as a result of the narrow gate, a Scanning Capacitance Microscope (SCM) was utilized to confirm electrical models, which indicated a narrow poly silicon gate would result in Vcc shorts. High frequency dry etching and UV-ozone oxidation...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 275-286, November 13–17, 2011,
... for lower resistance opens . The use of a multifunctional current amplifier provides many additional benefits to the EBAC analysis. It improves the EBAC image signal-to-noise ratio (SNR). It also improves the bandwidth response, as well as providing for additional functionality such as offset current...
Proceedings Papers

ISTFA2001, ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis, 477-482, November 11–15, 2001,
.... The value of the resistor will be set by the underlying gate material. This material is either polysilicon or amorphous silicon uniformly doped to prevent n- or p-channel gate depletion.[1,2]. The value of this resistor is typically from 70 to 130 ohms/square for n-doped poly. The matching properties...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 347-351, October 31–November 4, 2021,
... method. Plan-view TEM analysis is commonly used for 3D NAND flash memory to monitor the size and shape of multiple channel holes. Such data at specific cell layers provides key information to understand the etch and deposition process in the channel holes. However, it is very challenge to make plan-view...
Proceedings Papers

ISTFA2003, ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis, 338-342, November 2–6, 2003,
.... Lateral image offset induced by the electrostatic field of a biased nozzle, can be removed by software position compensation. failure analysis focused ion beam systems gas assisted etching integrated circuit modification scanning electron microscopy silicon Improvements of Secondary...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 423-425, November 12–16, 2006,
... induced by the gate etching and S/D ion implantation process. Since there is an increase in the degraded region length of the gate oxide to the total channel length for short channel devices, the local degradation affects the device characteristics significantly. This has been considered as the reason...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 158-163, November 13–17, 2011,
... in Figure 2 and the abnormal falling edge in Figure 3. Figure 2: Block diagram of one I/O channel of the bi- directional level shifter. Bench testing revealed that the fall time would decrease when the device was heated as shown in Figure 4. Therefore the failure was considered a good candidate for SDL...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 21-26, November 6–10, 2005,
... package dimensions and pin-count were identical for both the octal and quad versions (7mm x 7mm x1mm, 48 pin). This effectively doubled the number of A/D converter channels available in the same QFN footprint while minimizing pin-out changes. A primary use for the current input 20-bit A/D converter...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 110-114, November 9–13, 2014,
...) is a key backside optical tool for modern failure analysis and real time logic debugging of signals propagating at operational speeds through integrated circuits (ICs). Conventional LVP systems rely on free carrier generation and optical absorption within the channel of CMOS transistors to modulate...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 27-35, November 18–22, 1996,
...", especially when newer and better FIB equipment became commercially available, featuring better defined ion beams, higher stage accuracy, and several useful options. The most important of these is doubtlessly Gas Assisted Etching (GAE) [3,4], which offers the possibility for enhanced etch rates (for Al...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 70-77, November 6–10, 2005,
... including buried (Box) thickness. Flat trenches 200x200µm were obtained using real time optical fringe monitoring with 125nm accuracy with 950nm λ and FIB bit map milling to adjust for parallelism to the ILD0. This bit map milling technique controlled the etch rate to maintain trench flatness by correlating...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 6-13, November 1–5, 2015,
... channels to create a modulated reflected light intensity. Infrared wavelengths are used to take advantage of Si s relative transparency for backside probing. The incident light is reflected back, captured, detected, and amplified. The small modulations in reflected intensity resulting from free carrier...