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bonding

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Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 8-11, October 28–November 1, 2018,
...Abstract Abstract This paper demonstrates the application of GHz-SAM for the detection of local non-bonded regions between micron-sized Cu-pads in a wafer-to-wafer hybrid bonded sample. GHz-SAM is currently the only available non-destructive failure analysis technique that can offer...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 619-626, November 6–10, 2016,
...Abstract Abstract Coating of the Cu bond wire with Pd has been a rather widely accepted method in semiconductor packaging to improve the wire bonding reliability. Based on comparison of a Cu bond wire and a Pd-coated Cu bond wire on AlCu pads that had passed HAST, new insight into the mechanism...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 370-375, November 12–16, 2006,
... Enhancement Method to Improve the Accuracy of Inter-metallic Area Inspection on the Bonding Pad through Chemical & Mechanical Removal Process Prong Kongsubto, Sirarat Kongwudthiti, Yupa Yousoom, Rit Lochingchairit, Pakorn Kongjaroon Spansion (Thailand) Ltd., 229 Moo 4, Changwattana Rd., Pakkred, Nonthabuti...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 206-209, November 4–8, 2007,
...Abstract Abstract Bond-pad integrity directly affects the performance of microelectronic devices. Bond-pad cracking and the related sub-pad cracking of Inter-Metal Dielectric (IMD) may introduce a high reliability risk and cause units to fail at environmental stress. Bond-pad cracks may...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 49-52, November 2–6, 2008,
... into the system-level process window, several corrective actions are possible. In this case, the most promising approach is an improvement of the stitch bond robustness, combined with a clear user specification. failure analysis optoelectronic devices reliability analysis wave soldering wirebonding...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 6-11, November 15–19, 2020,
...Abstract Abstract This paper presents novel optical beam-based defect localization approaches for resistive and open failed wafer-towafer (W2W) bonding interconnects for 3-D integration. The use of an etch back process in combination with thermal laser stimulation (TLS) and light-induced...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 217-221, November 15–19, 2009,
...Abstract Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 181-185, November 14–18, 2010,
... can be used to highlight the growth morphology of the intermetallic compound (IMCs). Utilizing this approach, the paper describes the results of a SEM imaging study of the intermetallic formation and growth at the Cu-Al bond interface during thermal ageing for up to 4000hrs at 150 deg C. The paper...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 186-190, November 14–18, 2010,
... to the process development of WtW bonding. With the increase in 3DIC, it is expected that fresh process characterization and failure analysis techniques will be required. The work presented shows the feasibility of extending FIB techniques to the process development of wafer-to-wafer bonded samples even on full...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 249-253, November 14–18, 2010,
...Abstract Abstract Wire bonding continues to remain as the dominant chip interconnect technology in the far backend process, regardless of the shrinkage of microchip Al bond pad size and the increase in the number of I/O connections in the modern ICs. The reliability of IC devices is directly...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 162-167, November 3–7, 2013,
...Abstract Abstract Direct surface bonding of wafers in 3D integration requires perfectly smooth surfaces, with roughness values below 1 nm, usually characterized with Atomic Force Microscopy. An alternative technique, Digital Holography Microscopy is evaluated here and shown to be precise enough...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 61-66, November 3–7, 2002,
...Abstract Abstract In this paper we described a technique which is not commonly used for failure analysis: Orientation Imaging Microscopy (OIM). We demonstrated that it offers unique opportunity for failure analysis of Cu bonding and interconnects. Additionally to its main application: texture...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 29-34, November 10–14, 2019,
...Abstract Abstract This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and its application for the detection of delamination at the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 266-272, November 10–14, 2019,
...Abstract Abstract Redistribution layer (RDL) bonding pad over active circuitry is utilized to re-route the original bond pad to other location for wire bonding using RDL. The damages in the active circuitry beneath the RDL bond pad induced by stress from wire bonding and package must...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 365-375, November 14–18, 1999,
... to a new package carrier with the polished side facing upward. A simple pin reassignment is all that is needed to correct the reverse wire sequence after wire to wire bonding or wire to frame bonding in the new package frame. The resulting orientation eliminates many of the problems of backside microscopy...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 393-398, November 15–19, 1998,
... real estate are required. By placing some ESD circuitry under the bond pads and maintaining good control over the wire bond process, good ESD levels can be obtained, excellent reliability can be achieved and significant die area can be saved. electrostatic discharge protection semiconductor...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 588-593, November 6–10, 2016,
...Abstract Abstract Bond pull testing, a well-known method in the failure analysis community, is used to evaluate the integrity of an electronic microchip as well as to detect counterfeit ICs. Existing bond pull tests require that the microchip be de-capsulated in order to obtain physical access...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 613-618, November 6–10, 2016,
... of particle induced corrosion of copper wire bond that resulted in an electrical failure. In the first case, adjacent pin resistive short failures were found to fail due to corrosion and electrochemical migration at wires that were in contact with calcium chloride particles. Analysis showed that the highly...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 1-7, October 28–November 1, 2018,
...Abstract Abstract This paper discusses the Failure Analysis methodology used to characterize 3D bonded wafers during the different stages of optimization of the bonding process. A combination of different state-of-the-art techniques were employed to characterize the 3D patterned and unpatterned...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 104-110, October 28–November 1, 2018,
...Abstract Abstract GHz scanning acoustic microscopy (GHz-SAM) was successfully applied for non-destructive evaluation of the integrity of back end of line (BEOL) stacks located underneath wire-bond pads. The current study investigated two sample types of different IC processes. Realistic bonding...