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bitcell transistor

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Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 322-324, November 15–19, 2020,
... an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 316-319, October 31–November 4, 2021,
... for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell Access (DBA). This technique has the advantage to shorten FA throughput time due to a time efficient test method and an intuitive...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 80-83, October 31–November 4, 2021,
... through conventional physical failure analysis techniques. In this paper, we present an advanced defect identification methodology for SRAM bitcell failures with fast speed and high accuracy based on the bitcell transistor analog characteristics from special design for test (DFT) features, Direct Bitcell...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 224-240, October 31–November 4, 2021,
...Abstract Abstract This paper explains how nanoprobe analysis was used to determine the cause of data retention failures in nonvolatile memory (NVM) bitcells. The challenge with such memory cells is that they consist of two transistors with a single control gate in series with a programmable...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 154-162, October 31–November 4, 2021,
... Generation Process from PLS measurements Background on photoelectric laser stimulation of SRAM bitcells A detailed review of the PLS signal generation process in MOSFET can be found in [15]. As a summary, when a transistor is irradiated with a laser with photon energy larger than the silicon bandgap...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 93-96, November 15–19, 2009,
... test escapes. Experimental setup The flash bitcell consists of a single floating gate transistor. This bit configuration uses a poly control gate (CG) separated by an interpoly dielectric (IPD). The floating gate (FG) poly acts as the storage medium. Program or charging of the cell consists...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 66-70, November 14–18, 2010,
...-transistor bitcell arrays, the defect is most likely embedded in the layers below the second metal level. The analysis could be rather simple for single bit failures. Advanced focused ion beam (FIB) systems with dual beam and ultra high resolution capability have been routinely used to find the physical...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 7-18, November 6–10, 2016,
... stripes are the fins while the horizontal red strips are the gates. Figure 10 shows the layout of a single bitcell. The overlaid circuit diagram shows the locations of the six transistors forming each bitcell. The dashed ovals are the two cross- coupled inverters which forms the storage element...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 373-376, November 15–19, 1998,
... problem was encountered on a FSRAM 4 MEGABIT density 0.4µm geometry family of integrated circuits. These devices consisted of a standard 4 transistor with load resistor static RAM bitcell configuration. The process was double / triple metal and triple polysilicon (poly) with poly 1 buried contacts. Figure...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 324-328, November 15–19, 2009,
... failure, the failing bitcell can be identified directly from bitmap scrambling data. Global isolation is not required; nano- scale electrical characterizations can be implemented directly to characterize the failure mechanisms of the defective transistors. In this paper, we discuss the methodology...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 323-328, November 10–14, 2019,
... set failures reveal both address and bitcell location), the current/voltage (IV) characteristics of the defective transistor isolated are not determined. This paper consists of the following sections: Ionizing Radiation Description, Electrical Test Results on Failing ASIC, Fault Isolation, FIB Cross...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 456-463, November 5–9, 2017,
... was landed in the SEM on the Erase Gate net driven by one of the two photoemitting transistors. An immediate difference could be seen between passing and failing rows: for the failing double bit signature, pairs of bitcells, drive transistors, and sink transistors were brightly illuminated, where a passing...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 86-98, November 10–14, 2019,
... investigations. In one provided example, the latchup trigger was isolated to FET based decoupling capacitors (decaps) widely used as fill. complementary metal-oxide semiconductor decoupling capacitors failure analysis fin field-effect transistor integrated circuits laser-stimulation mapping latchup...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 218-222, November 13–17, 2011,
... of the n-channel transistors, Figure 1: Gate-to-Source/Drain I-V measurements acquired from nanoprobing. as shown in Figure 1. The electrical data supported gate oxide leakage as the root cause failure mechanism. However, longitudinal and cross-sectional TEM images of the n-channel transistors did...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 112-117, November 11–15, 2012,
...- visual failures through electrical characterization in current FA metrology for fault identification.[1,2] A majority of the work reported with SEM-based nanoprobing utilize 3 to 4 probes to obtain standard transistor family curves.[3] With 8 probes used concurrently, the system could have the ability...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 407-411, November 12–16, 2006,
... are verified, near DC scan tests can be tested to look for basic transistor operation followed by AC Scan or at speed Scan tests to look for timing issues. The logging of fail data is critical in the evaluation of the manufacturing process and the identification of yield issues. The value of memory bitmaps...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 464-468, November 5–9, 2017,
... to minimize the impact on transistor characteristics. However, SEM imaging resolutions degrades with lower beam energies. The imaging capability on both tools were compared and studied using the following two criteria. SRAM bitcells were imaged at 200eV and 500eV without any probes on the sample. The images...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 223-225, November 4–8, 2007,
...Abstract Abstract Non-visual fails have become an ever present complication in the IC industry. Nano probing SRAM bit cells at the inverter level allows the cell to be tested and static noise margin (SNM) to be measured. This paper explains how nano probing of a 65nm technology 6 transistor bit...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 557-561, November 11–15, 2012,
... of the materials of choice for nanotips due to its material hardness, conductivity and slow oxidation in air. With a minimum of 3 probes, such a nanoprobing system is capable of direct transistor characterization at the contact level. A system with 8 probes allows further analysis such as studying static noise...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 401-408, November 1–5, 2015,
...: Data was provided by DCG. This paper introduces the non-traditional PI-V and C-V applications to solve real-world FA cases to detect high- resistance gates in advanced transistor devices. Usually, the full device sweep-DC I-V (SI-V) data from Nanoprobing should be able to detect most hard-fail defects...