1-20 of 357 Search Results for

back-end-of line

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 219-225, November 15–19, 2020,
... on pulsed IV nanoprobing applications were mostly related to Front End Of Line (FEOL) issues and simulations. In most of these cases, the electrical abnormality could also be observed with normal DC IV measurement. In this paper, the pulsed IV nanoprobing was performed at the Back End Of Line (BEOL...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 208-213, November 15–19, 2009,
...Abstract Abstract We compare different dc current-based integrated capacitance measurement techniques in terms of their applicability to modern CMOS technologies. The winning approach uses quadrature detection to measure mutual Front-End-Of-Line (FEOL) and Back-End-Of-Line (BEOL) capacitances...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 204-208, November 2–6, 2008,
...Abstract Abstract MOSFET devices are routinely measured at the probe pad level with conventional capacitance-voltage (CV) measurement instruments. Such measurements are done at the front end of line (FEOL) and back end of line (BEOL) process completion levels. The CV data is used to monitor...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 249-254, November 3–7, 2013,
... of the front end of line and one back end of line issues is highlighted in the paper. 20 nm process front end of line nanoprobing root cause analysis semiconductor devices Nanoprobing As An Essential and Fast Methodology in Identification of Failure s Root Cause for Advanced Technology Ma Yinzhe...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 268-273, November 9–13, 2014,
...Abstract Abstract With technology scaling of semiconductor devices and further growth of the integrated circuit (IC) design and function complexity, it is necessary to increase the number of transistors in IC’s chip, layer stacks, and process steps. The last few metal layers of Back End Of Line...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 331-335, November 5–9, 2017,
... important to understand the root cause of failures at fastest pace to take necessary corrective actions. The use of ultra low K dielectrics for back end of line wafer build for advanced nodes created significant constraints on conventional beam imaging methods for fault isolation. This paper provides...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 489-494, November 5–9, 2017,
.... In the second example, a newly developed sample preparation flow in combination with Nanoscale 3D X-Ray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced. back end of line chip-package-interaction failure analysis sample preparation semiconductor packages...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 574-579, November 5–9, 2017,
... technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 104-110, October 28–November 1, 2018,
...Abstract Abstract GHz scanning acoustic microscopy (GHz-SAM) was successfully applied for non-destructive evaluation of the integrity of back end of line (BEOL) stacks located underneath wire-bond pads. The current study investigated two sample types of different IC processes. Realistic bonding...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 133-137, October 28–November 1, 2018,
...-resistive defect of Back-End-of-Line (BEOL) which was not detected by a conventional way and efficiently reduced the turn-around time (TAT) of physical failure analysis (PFA) by 57%, prompting fast feedback to fab. back-end-of-line defect logic device low-resistive defect physical failure analysis...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 232-237, October 28–November 1, 2018,
.... To combat the aggressive back-end-of-line (BEOL) scaling which has significantly decreased the controllability of manual polishing, gas-assisted Xe plasma FIB has been employed to achieve large area uniform delayering. Combined with an in-situ probing capability within the plasma FIB, the iterative process...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 203-206, November 11–15, 2012,
...Abstract Abstract The back-end-of-line (BEOL) structure of current IC devices fabricated for advanced technologies is composed of film stacks with multiple interfaces. The requirement of high interfacial strength is therefore necessary between the different layers in the BEOL stacks to ensure...
Proceedings Papers

ISTFA2012, ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, 297-304, November 11–15, 2012,
...Abstract Abstract In this paper, we propose a new methodology and test system to enable the early detection and precise localization of Time-Dependent-Dielectric-Breakdown (TDDB) occurrence in Back-End-of-Line (BEOL) interconnection. The methodology is implemented as a novel Integrated...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 582-586, November 3–7, 2013,
..., and commonality signature trending. The paper presents examples of systematic defects uniquely captured by the product-like back end of the line layout. Moreover, this complex logic vehicle also uncovered a rich Pareto of more than 20 types of systematic and random defect mechanisms across the front end...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 33-39, November 3–7, 2013,
...Abstract Abstract For 22nm and below technologies which involve as many as fifteen back end of the line (BEOL) metallization levels, these leading edge technology nodes pose real challenges in defect localization and root cause analysis. Due to scaling, the reduction in copper land cross...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 198-203, November 2–6, 2008,
... exchange dynamics. In this paper, we demonstrate for the first time the efficiency of this technique on 45 nm Back End Of the Line (BEOL) defective test structure on image mode, and we underline the efficiency of the developed technique to differentiate artifacts from true defects in 45 nm BEOL structures...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 104-110, November 10–14, 2019,
... this, a case study at die level is presented in an attempt to distinguish the phase information from two stacked M2-M3 metallization layers of the Back-End Of the Line (BEOL). Finally, temperature mapping results of a 5 micron wide aluminum feature in silicon-oxide is presented that is pushing the optical...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 362-366, November 13–17, 2011,
... of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 317-319, November 14–18, 2010,
... delayering methods of conventional scanning capacitance microscopy has also been highlighted [1,2,3,4,5,6]. Typically, this laboratory AFP characterization is employed on die fragments sampled from whole wafers following back end of the line (BEOL) metallization processing and test. The process vintage...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 355-358, November 3–7, 2002,
.... Utilizing inline E-beam inspection equipment, the electrical faults can be captured at the source layer rather than after final test. E-beam inspection can be incorporated in the manufacturing line at any critical layer of front end and back-end. This paper describes the in-line E-beam inspection...