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SRAM

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Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 268-273, November 9–13, 2014,
... Deprocessing Techniques in Physical Failure Analysis on SRAM Memory of Advance Technology H.H. Yap, P.K. Tan, G.R. Low, M.K. Dawood, H. Feng, Y.Z. Zhao, Y. Zhou, R. He, H. Tan, Y.M. Huang, D.D. Wang, Y. Zhou, P.S. Limin, S. James, J. Lam, Z.H. Mai Globalfoundries Singapore Pte. Ltd. E-mail: HueiHao.YAP...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 307-311, November 9–13, 2014,
..., such as operating voltage and frequency. This paper showcase another successful implementation of DLS technique, combined with design analysis to reveal the root cause for SRAM soft failure. design debugging dynamic laser stimulation failure analysis root cause analysis soft defect localization SRAM...
Proceedings Papers

ISTFA2014, ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, 528-532, November 9–13, 2014,
... defects or cross talk faults are not as streamlined as they are for traditional fault models. Additionally, more advanced fault types don’t typically have the same diagnostic capability. In this paper, capabilities are developed for maximizing the effectiveness of test on embedded SRAM interconnects...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 388-400, November 1–5, 2015,
... conductivity across the DUT area, all with no obvious detrimental effects on typical DC device parameters measured by nano-probing. atomic force nanoprobing DC devices delayering device under test failure analysis fault isolation fin field-effect transistors focused ion beam SRAM xenon ion beam...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 129-135, November 12–16, 2000,
...Abstract Abstract SRAM bitmapping and failure analysis have been used as a driver for continuous yield improvement during pre-qualification manufacturing of a microcontroller. The combination of the embedded SRAM electrical failure data and failure analysis results was used to generate a pareto...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 309-313, November 12–16, 2000,
... semiconductor devices SRAM transmission electron microscopy 309 Combining FIB sequential cross-sectioning with TEM for small Defect Analysis in SRAM array Nathan Wang and Rei Fang Cypress Semiconductor Corp., San Jose, California, USA Abstract To find defects and their root cause in semiconductor devices...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 159-164, November 18–22, 1996,
...Abstract Abstract A new 0.5 um 1 Megabit SRAM which employed a double metal, triple poly CMOS process with Tungsten plug metal to poly /silicon contacts was introduced. During burn-in of this product, high currents, apparently due to electrical overstress, were experienced. Electrical analysis...
Proceedings Papers

ISTFA1997, ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis, 339-343, October 27–31, 1997,
...Abstract Abstract A single bit failure is the most common and the most difficult failure mode to analyze in a Static Random Access Memory (SRAM). As chip feature sizes decrease, the difficulties compound. Traditional failure analysis techniques are often ineffective, particularly for high...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 7-18, November 6–10, 2016,
...Abstract Abstract Using a laser to purposely damage (or zap) a static random-access memory (SRAM) bitcell for bitmap validation purposes is a well-established technique. However, the absence of visible damage in FinFET SRAM cells, amongst other things, makes precision zapping in these devices...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 137-140, November 6–10, 2016,
...Abstract Abstract In this article, an analysis of a failure in the embedded SRAM in a CMOS Image Sensor is investigated. The failure was due to unformed CoSi2. Because unformed CoSi2 causes a varying degree of response, a nano-prober was used to find the abnormally operating transistors among...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 564-567, November 6–10, 2016,
...Abstract Abstract Through custom test pattern generation and SRAM design analysis, we present the first demonstration of Laser Voltage Imaging (LVI) and Probing (LVP) for the successful fault isolation and physical analysis of DQ failures within a 14nm SRAM macro. These findings revealed...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 140-142, November 5–9, 2017,
... and identify root-cause, leading to the resolution of this issue. electron energy loss spectroscopy energy dispersive X-ray spectroscopy FinFET root cause analysis scanning electron microscopy semiconductor processing SRAM transmission electron microscopy SRAM PFET and NFET Super FIN...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 115-120, October 28–November 1, 2018,
...Abstract Abstract Massively parallel test structures, based on looking for shorts between certain design elements in the SRAM cells, are becoming increasingly relied upon in yield characterization. The localization of electrical shorts in these structures has posed significant challenges...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 266-271, October 28–November 1, 2018,
...Abstract Abstract This paper compares the three major semi-invasive optical approaches, Photon Emission (PE), Thermal Laser Stimulation (TLS) and Electro-Optical Frequency Mapping (EOFM) for contactless static random access memory (SRAM) content read-out on a commercial microcontroller...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 300-302, October 28–November 1, 2018,
...Abstract Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 309-314, October 28–November 1, 2018,
...Abstract Abstract Low power mode current is a very important parameter of most microcontrollers. A non-production prototype microcontroller had high current issues with certain SRAM modules which were produced using a new memory compiler. All devices were measuring 100’s μA of low power mode...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 387-396, October 28–November 1, 2018,
...Abstract Abstract In this paper, we demonstrate a novel nanoprobing approach to establish cause-and-effect relationships between voltage stress and end-of-life performance loss and failure in SRAM cells. A Hyperion II Atomic Force nanoProber was used to examine degradation for five 6T cells...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 397-402, October 28–November 1, 2018,
... and SRAM devices. This paper presents three case studies of subtle defects on a technology beyond 14nm that required nanoprobing. defect isolation electrical probing electron beam absorbed current failure analysis logic devices nanoprobing SRAM devices Nanoprobing and EBAC for Improving...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 474-476, October 28–November 1, 2018,
...Abstract Abstract SRAM failure analysis (FA) provides significant value to process improvement and yield enhancement. This paper introduces an innovative method to analyze the SRAM peripheral, particularly its input/output (DQ) failures, which is not easy to isolate the fault location...
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 179-181, November 10–14, 2019,
...Abstract Abstract Static Random-Access Memory (SRAM) failure analysis (FA) is important during chip-level reliability evaluation and yield improvement. Single-bit, paired-bit, and quad-bit failures—whose defect should be at the failing bit-cell locations—can be directly sent for Physical...