1-20 of 34 Search Results for

Raman spectroscopy

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Proceedings Papers

ISTFA2019, ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis, 292-294, November 10–14, 2019,
... of obtaining Infrared microspectroscopic information, at the submicron level in reflection (far-field) mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. This novel...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 501-507, November 5–9, 2017,
...Abstract Abstract The given project is to benchmark typical preparation methods under the aspect of the influence of initial intrinsic stresses inside electric components. Raman spectroscopy has been applied as well as the piezo resistive readout on a specifically designed model stress...
Proceedings Papers

ISTFA2020, ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis, 75-78, November 15–19, 2020,
... infrared spectroscopy optical photothermal infrared spectroscopy organic contamination photoresist polymers Raman spectroscopy semiconductor manufacturing Enhanced Failure Analysis (FA) of Organic Contamination Using Submicron Simultaneous IR and Raman Spectroscopy: Breakthrough Developments...
Proceedings Papers

ISTFA1999, ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis, 69-76, November 14–18, 1999,
...Abstract Abstract In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS ESD protection devices. The measurements were carried out in avalanche and snapback biasing conditions...
Proceedings Papers

ISTFA1998, ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis, 11-15, November 15–19, 1998,
...Abstract Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 196-202, October 31–November 4, 2021,
...Abstract Abstract This paper discusses the use of optical photothermal infrared (O-PTIR) spectroscopy combined with Raman analysis. The new technique overcomes many of the limitations of conventional FTIR and Raman spectroscopy when used alone. It is based on an infrared-visible pump-probe...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 203-205, October 31–November 4, 2021,
... stage of manufacturing and are quite time intensive. This paper shows that inline reliability metrology based on Raman spectroscopy is an effective approach for early fault detection and can be used to monitor unintended epi growth, strain, lattice defects, stacking faults, dislocations, and post-etch...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 602-605, November 5–9, 2017,
...Abstract Abstract Carrier mobility enhancement through local strain in silicon is a means of improving transistor performance. Among the scanning probe microscopy based techniques, tip-enhanced Raman spectroscopy (TERS) has shown some promising results in measuring strain. However, TERS...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 423-429, October 31–November 4, 2021,
... packages) increase stress locally. The results are confirmed by stress measurements obtained through Raman spectroscopy, although more complex models are needed to account for nonlinear effects in devices thinned to 3 μm and heated to 125°C. Thermal imaging shows that increased local heating occurs...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 517-522, November 3–7, 2013,
... widely investigated with great interest.[5-12] One of the most common characterization tools is micro-Raman spectroscopy. It is an easy and rapid technique for the identification of the chemical bonds of materials. Many of the spectral patterns for the organic group attached to silicon are highly unique...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 1-5, November 4–8, 2007,
... spatial resolution. Recently Bristol University has shown micro-Raman spectroscopy to be a suitable technique to measure electronic device temperature with sub-micron/micron spatial resolution [3-6], including its use for validation of thermal simulations [4]. In this contribution, we report...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 236-241, November 4–8, 2007,
... etch process formulated specifically to attack the nickel carbonate. ball grid array packages energy dispersive X-ray spectroscopy etching Fourier transform infrared spectroscopy in-circuit electrical test nickel carbonate contamination optical inspection photoresist Raman spectroscopy...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 88-94, November 5–9, 2017,
... metal oxide semiconductor field-effect transistors (CMOS FETs) and bipolar junction transistors (BJTs) in bulk and SOI technologies. Commonly employed direct stress measurement techniques such as micro-Raman spectroscopy [1], nano-beam diffraction (NBD) [2], and converging electron beam diffraction...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 199-204, November 1–5, 2015,
... had been altered via sand-blasting. The goal was to evaluate the application of Raman and FTIR spectroscopies to the detection of residual blasting materials which may remain embedded on the package surface. A number of part types, such as typical ICs and metal can devices, were blasted with a variety...
Proceedings Papers

ISTFA2015, ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, 124-130, November 1–5, 2015,
.... It is of high interest to industry to determine the keep-out-zone, i.e. the zone around a TSV where transistors are impacted by stress from the TSV. This stress is most often studied by micro-Raman spectroscopy, sometimes combined with finite element models [2], and its 124 ISTFA 2015: Conference Proceedings...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 446-448, November 6–10, 2016,
... identifying organic materials. However, the traditional IR spectro-microscopic defect analysis methods offer the diffraction limited detection resolution only up to 3-10 m or larger [2]. Alternatively, Raman spectroscopy provides similar chemical insight with sub-micrometer spatial resolution due...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 159-161, November 3–7, 2013,
..., these sub-micrometer defects create a significant challenge in spatial resolution and reasonable signal to noise for IRµs. Raman spectroscopy potentially provides a sub-micrometer spatial resolution due to the short excitation wavelength. Good quality Raman spectra could be obtained in this manner...
Proceedings Papers

ISTFA2009, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, 65-72, November 15–19, 2009,
... temperature measurements are limited to top side measurements in silicon. This paper describes the first ever IR Raman measurements in silicon and demonstrates its use for backside temperature measurements. failure analysis infrared thermal microscopy Raman spectroscopy silicon temperature...
Proceedings Papers

ISTFA2011, ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis, 230-233, November 13–17, 2011,
... to be checked for all designs and technologies in the military and space applications. Many tools are available for junction thermal measurement, especially micro-Raman spectroscopy and Scanning Thermal microscopy. These techniques are very sensitive with high spatial resolution but lack speed for cartography...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 435-442, November 12–16, 2000,
..., the purpose of this paper is twofold: first to demonstrate the methodology for the accurate measurement and mapping of local temperatures in both SiC-based field effect transistors and GaAs-based HBTs, using the technique of spatially resolved Raman or PL spectroscopy, and second to discuss the behavior...