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P-N junction

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Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 257-261, November 4–8, 2007,
...Abstract Abstract The P-N junctions are part of the construction of semiconductor devices. They are formed by the combination of P-type and N-type diffusions. This paper discusses a soft (small early conduction) P-N junction breakdown. The P-N junction in this work is a part of a differential...
Proceedings Papers

ISTFA2021, ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis, 352-358, October 31–November 4, 2021,
...Abstract Abstract This paper describes how electron beam induced current (EBIC) analysis is used to determine the doping profile of p-n junctions and identify defective devices. The limitations of both chemical etching and EBIC are discussed as is the use of ion milling as a potential method...
Proceedings Papers

ISTFA2016, ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis, 108-111, November 6–10, 2016,
...Abstract Abstract Localizing a tiny fault causing abnormal leakage current in a large area P/N junction for a large MOS, diode or BJT structure by nano-probing was demonstrated. The localization was realized through probing the contacts on the junctions and comparing the reversed bias junction...
Proceedings Papers

ISTFA2008, ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis, 163-167, November 2–6, 2008,
...Abstract Abstract This article describes the use of an optimized electrochemical delineation technique with illumination to clearly delineate the P-N junction on Si in short channel devices. In this process, the samples are exposed to a light source while in an aqueous CuSO4/HF/H2SO4 solution...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 361-368, November 3–7, 2013,
... in the integrated circuit have yet to be investigated. The common hypothesis is that the photoelectric current created during the light stimulation flows through the P-N junctions, and corrupts voltage outputs of the cells. In this paper, we consider the vertical parasitic bipolar junction transistors inherent...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 418-423, October 28–November 1, 2018,
... to the exposed P+/N+ junction on the die sidewall. Solder die attach residue bridging or silicon damage at this exposed P+/N+ junction are common causes of ICESR leakage. The die attach residue can be dislodged during decapsulation resulting in loss of failure information. A failure analysis flow...
Proceedings Papers

ISTFA2018, ISTFA 2018: Conference Proceedings from the 44th International Symposium for Testing and Failure Analysis, 424-428, October 28–November 1, 2018,
... to the exposed P+/N+ junction on the die sidewall. Solder die attach residue bridging or silicon damage at this exposed P+/N+ junction are common causes of ICESR leakage. The die attach residue can be dislodged during decapsulation resulting in loss of failure information. A failure analysis flow...
Proceedings Papers

ISTFA2013, ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis, 407-411, November 3–7, 2013,
... is to achieve an extremely low level of standby current in power consumption. What has been found is that an increase of offleakage current in the pMOSFET is related closely to a contact-formation process, in particular, TiSi2 in p+/n junction. When a direct contact becomes close to a source/drain region...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 155-159, November 5–9, 2017,
...Abstract Abstract The timely and accurate imaging of problems in p/n junctions is increasingly important. Scanning Capacitance Microscopy is a current standard for precise 2D-mapping of carrier profiles, but care must be taken to choose the correct field of view because of the slow scan time...
Proceedings Papers

ISTFA2005, ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis, 8-13, November 6–10, 2005,
...-wells; ▪ n-well to p-well interface; ▪ p+/p interface. The enhancement process to obtain this contrast was done on a Credence OptiFIB using a coaxial FIB/optical column. Illumination of the sample is a critical component of the process. First, the high contrast level obtained at a p/n junction was only...
Proceedings Papers

ISTFA1996, ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis, 239-241, November 18–22, 1996,
...Abstract Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~10 18 /cm 3 ) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward...
Proceedings Papers

ISTFA2004, ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis, 120-125, November 14–18, 2004,
..., that the leakage path is caused by dislocations, reaching from the silicon surface through the p+n junction zone into the substrate. Based on these results and the implant conditions, a theory of dislocation formation was postulated and countermeasures had been defined. diodes dislocations electrostatic...
Proceedings Papers

ISTFA2006, ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis, 453-456, November 12–16, 2006,
... reduction for the depth of the p-n junctions. This paper performed the flash lamp annealing process application, applied to the CMOS as alternative method to attain the goal of shallow junction in the case. A marginal thermal budget mismatch related failure mode was revealed and explained. CMOS...
Proceedings Papers

ISTFA2000, ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis, 521-527, November 12–16, 2000,
... and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions...
Proceedings Papers

ISTFA2017, ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis, 279-284, November 5–9, 2017,
...] that uses p-n junctions as light emitters (forward bias) and detectors. We improved the backside detection mechanism presented in the patent by developing a test structure and adding an optically active layer on the backside as protective element to detect an attacked backside with electrical signals...
Proceedings Papers

ISTFA2002, ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis, 39-45, November 3–7, 2002,
...)-technique is becoming more and more significant. An urgent requirement is in the visualization of dimensions of the doped regions and estimation of p-n-junctions profile with a high level spatial resolution. The off-axis electron holography, a special TEM-technique, is able to visualize electrically active...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 284-292, November 4–8, 2007,
... at p-n junctions. A series of experiments was performed to reproduce this voiding in a laboratory environment using water and exposure to light or dark. The experiments were performed on two different size capacitor arrays. In addition, similar experiments were performed on a large capacitor array...
Proceedings Papers

ISTFA2007, ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis, 348-350, November 4–8, 2007,
...Abstract Abstract In reliability test some chips suffered functional failure. Through a series of failure analysis experiments, the root cause was determined to be a silicon dislocation across LDD (Lightly Doped Drain) area causing p-n junction leakage. However, those failed samples all passed...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 137-142, November 14–18, 2010,
... part starts with explanation of the EBIC technique, including details about the temperature dependence of the EBIC defect contrast c(T). Then, application examples of the c(T) behavior and the analysis of the "interaction" of grain boundaries with p-n junctions are discussed. The paper demonstrates...
Proceedings Papers

ISTFA2010, ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis, 151-157, November 14–18, 2010,
... and additional EBIC analysis can be applied for a three dimensional analysis of the p/n junction. electron beam induced current failure analysis focused ion beam lock-in thermography p-n junction photoluminescence spectroscopy scanning electron microscopy thin-film solar cells Combined electron...